STMicroelectronics-TPDV1240RG

Part #STMicroelectronics-TPDV1240RG
Download 
STMicroelectronics-TPDV1240RG
TPDVxx40  
40 A high voltage Triacs  
Datasheet
–
production data  
Description  
$ꢀ
 
$ꢁ
 
The TPDVxx40 series use a high performance  
alternistor technology. Featuring very high  
commutation levels and high surge current  
capability, this family is well adapted to power  
control on inductive load (motor, transformer…).  
*
Table 1. Device summary  
$ꢁ
 
Blocking  
voltage  
On-state  
current  
Gate  
current  
$ꢀ
 
*
Parameter  
V
/V  
I
I
DRM RRM  
T(RMS)  
GT  
723ꢂꢃLQVXODWHG
 
TPDV640RG  
TPDV840RG  
TPDV1240RG  
600 V  
800 V  
40 A  
200 mA  
Features  
1200 V  
•
•
•
•
•
•
On-state current (I  
): 40 A  
T(RMS)  
Max. blocking voltage (V  
/V  
): 1200 V  
DRM RRM  
Gate current (I
 
): 200 mA  
GT  
Commutation at 10 V/µs: up to 142 A/ms  
Noise immunity: 500 V/µs  
Insulated package:  
– 2,500
 
V rms (UL recognized: E81734)  
June 2015  
DocID18270 Rev 2  
1/8  
This is information on a product in full production.  

Characteristics  
TPDVxx40  
1
Characteristics  
Table 2. Absolute ratings (limiting values)  
Parameter  
Symbol  
Value  
Unit  
I
On-state rms current (180° conduction angle)  
t =
 
2.5 ms  
T =
 
75 °C  
40  
590  
370  
350  
610  
20  
A
T(RMS)  
c
p
Non repetitive surge peak on-state  
current  
I
t =
 
8.3 ms  
T =
 
25 °C  
A
TSM  
p
j
t =
 
10 ms  
p
2
2
2
I t  
I t value for fusing  
t =
 
10 ms  
T =
 
25 °C  
A S  
p
j
Repetitive F = 50 Hz  
Non repetitive  
TPDV640  
Critical rate of rise of on-state current  
dI/dt  
A/µs  
V
I
= 500 mA; dl
 
/dt = 1 A/µs  
G
100  
600  
800  
1200  
G
V
V
DRM  
RRM  
Repetitive peak off-state voltage  
TPDV840  
T =
 
125 °C  
j
TPDV1240  
Storage junction temperature range  
Operating junction temperature range  
-40 to +150  
-40 to +125  
T
T
stg  
°C  
j
T
Maximum lead temperature for soldering during 10 s at 2 mm from case  
Insulation rms voltage  
260  
°C  
V
L
(1)  
INS(RMS)  
V
2500  
1. A1,
 
A2, gate terminals to case for 1 minute  
Table 3. Electrical Characteristics (T
 
= 25 °C, unless otherwise specified)  
j
Symbol  
Test condition  
Quadrant  
Value  
Unit  
I
Max.  
Max.  
Min.  
Typ.  
Typ.  
200  
1.5  
0.2  
2.5  
50  
mA  
V
GT  
V
= 12 V DC, R
 
= 33
Ω
 
I – II – III  
D
L
V
V
GT  
GD  
V
V
= V  
= V  
R =
 
3.3 k
Ω  
T = 125 °C  
I – II – III  
I – II – III  
V
D
D
DRM  
DRM  
L
j
t
I
= 500 mA dl
 
/dt = 3A/µs  
µs  
mA  
gt  
(1)  
G
G
I
I =
 
500 mA Gate open  
T
H
I – III  
II  
100  
200  
I
I
= 1.2 x I  
GT  
Typ.  
mA  
L
G
Linear slope up to :  
V =
 
67% V
 
Gate open  
dV/dt  
T = 125 °C  
Min.  
500  
V/µs  
j
D
DRM  
(1)  
V
I
= 56 A
 
t =
 
380 µs  
Max.  
1.8  
20  
8
V
TM  
TM  
p
T = 25 °C  
µA  
mA  
I
j
DRM  
RRM  
V
V
Max.  
Min.  
DRM =
 
RRM  
I
T = 125 °C  
j
(dV/dt)c = 200 V/µs  
(dV/dt)c = 10 V/µs  
35  
142  
(1)  
(dI/dt)c  
T = 125 °C  
A/ms  
j
1. For
 
either polarity of electrode A

2

voltage with reference to electrode A

1

.  
2/8  
DocID18270 Rev 2  
 

TPDVxx40  
Symbol  
Characteristics  
Unit  
Table 4. Gate characteristics (maximum values)  
Parameter  
Value  
P
Average gate power dissipation  
1
40  
8
W
W
A
G(AV)  
P
Peak gate power dissipation  
Peak gate current  
t =
 
20 µs  
p
GM  
I
t =
 
20 µs  
p
GM  
V
Peak positive gate voltage  
t =
 
20 µs  
16  
V
GM  
p
Table 5. Thermal resistance  
Parameter  
Symbol  
Value  
Unit  
R
Junction to ambient  
50  
1.2  
0.9  
°C/W  
°C/W  
°C/W  
th(j-a)  
R
R
DC  
AC  
Junction to case for DC  
th(j-c)  
th(j-c)  
Junction to case for 360 °conduction angle (F = 50 Hz)  
Figure 1. Max. rms power dissipation versus
 
Figure 2. Max. rms power dissipation and max.  
on-state rms current (F = 50 Hz)  
(curves limited by (dI/dt)c)  
allowable temperatures (T  
and T  
) for  
amb  
th  
case  
various R  
3ꢄ:ꢅ
 
3ꢄ:ꢅ
 
7
ꢄƒ&ꢅ
 
FDVH
 
ꢋꢇ
 
ꢋꢇ
 
5
 
ꢃ
ꢇꢍꢀꢊ
 
ƒ&ꢎ
 
:
 
WK
 
 ꢃꢁꢆꢇƒ
 
ꢌꢊ
 
ꢆꢊ
 
ꢊꢇ
 
ꢉꢇ
 
ꢂꢇ
 
ꢀꢇ
 
ꢁꢇ
 
ꢇ
ꢊꢇ
 
ꢉꢇ
 
ꢂꢇ
 
ꢀꢇ
 
5
 
ꢃ
ꢇꢍꢌꢊƒ
 
&ꢎ:
 
WK
 
5
 
ꢃ
ꢇ
 
ƒ&ꢎ:
 
WK
 
 ꢃꢁꢀꢇƒ
 
5
 
ꢃ
ꢇꢍꢊ
 
ƒ&ꢎ:
 
WK
 
 ꢃꢈꢇƒ
 
ꢈꢊ
 
 ꢃꢋꢇƒ
 
ꢁꢇꢊ
 
ꢁꢁꢊ
 
ꢁꢀꢊ
 
 ꢃꢂꢇƒ
 
ꢁꢇ
 
ꢁꢆꢇƒ
 
ꢁꢇ
 
ꢇ
,
ꢄ$ꢅ
 
7
ꢄ
ƒ
&ꢅ
 
DPE
 
7ꢄ506ꢅ
 
ꢇ
ꢀꢇ
 
ꢉꢇ
 
ꢋꢇ
 
ꢆꢇ
 
ꢁꢇꢇ
 
ꢁꢀꢇ
 
ꢁꢉꢇ
 
ꢇ
ꢊ
ꢁꢊ
 
ꢀꢇ
 
ꢀꢊ
 
ꢂꢇ
 
ꢂꢊ
 
ꢉꢇ
 
Figure 3. On-state rms current versus case  
temperature  
Figure 4. Relative variation of thermal  
impedance versus pulse duration  
.ꢃ ꢃ>=
 
ꢎ5
 
@
,
ꢄ$ꢅ
 
7ꢄ506ꢅ
 
WKꢄMꢏFꢅ
 
WKꢄMꢏFꢅ
 
ꢊꢇ
 
ꢉꢇ
 
ꢁꢍꢇꢇ
 
 ꢃꢁꢆꢇƒ
 
=
WKꢄMꢏFꢅ
 
ꢇꢍꢁꢇ
 
ꢇꢍꢇꢁ
 
ꢇꢍꢇ
 
ꢂꢇ
 
ꢀꢇ
 
ꢁꢇ
 
ꢇ
=
WKꢄMꢏDꢅ
 
7
ꢄƒ&ꢅ
 
FDVH
 
W
 
ꢄ
 
V
ꢅ
 
S
ꢇ
ꢀꢊ
 
ꢊꢇ
 
ꢌꢊ
 
ꢁꢇꢇ
 
ꢁꢀꢊ
 
ꢁ(ꢏꢂ
 
ꢁ(ꢏꢀ
 
ꢁ(ꢏꢁ
 
ꢁ(ꢐꢇ
 
ꢁ(ꢐꢁ
 
ꢁ(ꢐꢀ
 
ꢁ(ꢐꢂ
 
DocID18270 Rev 2  
3/8  
8

Characteristics  
TPDVxx40  
Figure 5. Relative variation of gate trigger  
current and holding current versus junction  
temperature  
Figure 6. Non repetitive surge peak on-state  
current versus number of cycles  
,
ꢒ,
 
ꢒ,
 
>7
 
@ꢃꢎꢃ,
 
ꢒ,
 
ꢒ,
 
>7
 
ꢃ ꢃꢀꢊꢃƒ&@
 
*7
 
*7
 
+
 
+
/
M
/
 
M
 
,
ꢄ$ꢅ
 
760
 
ꢀꢍꢊ
 
ꢀ
ꢂꢊꢇ
 
ꢂꢇꢇ
 
ꢀꢊꢇ
 
ꢀꢇꢇ
 
ꢁꢊꢇ
 
ꢁꢇꢇ
 
ꢊꢇ
 
W
ꢃ ꢃꢁꢇꢃPV
 
S
2QH
 
FFOH
 
,
*7
 
ꢁꢍꢊ
 
7
 
ꢃLQLWLDOꢃ ꢃꢀꢊꢃƒ&
 
M
ꢁ
,

+
 

ꢑꢃ,

/
 

ꢇꢍꢊ
 
ꢇ
1XPEHUꢃRIꢃFFOHV
 
7
 
ꢄƒ&ꢅ
 
M
ꢇ
ꢁ
ꢁꢇ
 
ꢁꢇꢇ
 
ꢁꢇꢇꢇ
 
ꢏꢉꢇ
 
ꢏꢂꢇ
 
ꢏꢀꢇ
 
ꢏꢁꢇ
 
ꢇ
ꢁꢇ
 
ꢀꢇ
 
ꢂꢇ
 
ꢉꢇ
 
ꢊꢇ
 
ꢋꢇ
 
ꢌꢇ
 
ꢆꢇ
 
ꢈꢇ
 
ꢁꢇꢇ
 
ꢁꢁꢇ
 
ꢁꢀꢇ
 
ꢁꢂꢇ
 
Figure 7. Non-repetitive surge peak on-state  
current for a sinusoidal pulse and  
Figure 8. On-state characteristics  
(maximum values)  
2
corresponding values of I t  
,
ꢄ$ꢅꢒꢃ,ðWꢄ$ðVꢅ
 
,
ꢄ$ꢅ
 
70
 
760
 
ꢁꢇꢇꢇ
 
ꢁꢇꢇ
 
ꢁꢇ
 
ꢁꢇꢇꢇꢇ
 
7

M
 

LQLWLDOꢃ ꢃꢀꢊƒ&
 
7
 
ꢃ ꢃPD[
 
M
ꢁꢇꢇꢇ
 
,
760
 
ꢀ
,ꢃW
 
7
 
 ꢃꢀꢊƒ&
 
Mꢃꢃ
 
                                                                                                                                           
7
PD[ꢍꢓ
 
9
 

M
 

 
 
ꢁꢍꢇꢀ9
 
Wꢇ
 
5
 
 
 
ꢁꢀP
 
G
9
70
 
ꢄ9ꢅ
 
W
 
ꢄPVꢅ
 
S
ꢁꢇꢇ
 
ꢁ
ꢁ
ꢀ
ꢂ
ꢉ
ꢊ
ꢋ
ꢁꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢀꢃ
 
ꢃ
ꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢊꢃ
 
ꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢃꢁꢇꢃ
 
Figure 9. Safe operating area below curve  
ꢄG9ꢎG
W
ꢅ
Fꢄ9ꢎ—Vꢅ
 
ꢁꢇꢇꢇ
 
ꢁꢇꢇ
 
7
 
L
 
QLWLDOꢃ ꢃꢁꢀ
ꢊ
ꢃ
ƒ&
 
M
ꢁꢇ
 
ꢁ
ꢄG,ꢎG
W
ꢅ
Fꢄ$ꢎPVꢅ
 
ꢁꢇ
 
ꢁꢇꢇ
 
ꢁꢇꢇꢇ
 
4/8  
DocID18270 Rev 2  
 

TPDVxx40  
Package information  
2
Package information  
•
•
•
Epoxy meets UL94, V0  
Cooling method:C (by conduction)  
.
Recommended torque value:0.9 to 1.2 N m  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages,
 
depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at:

.  
®
ECOPACK is
 
an ST trademark.  
2.1  
TOP3 insulated package information  
Figure 10. TOP3 insulated package outline  
+
$
5
%
‘/
 
.
*
&
)
3
‘
–
–
(
DocID18270 Rev 2  
5/8  
8

Package information  
TPDVxx40  
Table 6. TOP3 insulated package mechanical data  
Dimensions  
(1)  
Ref.  
Millimeters  
Min.  
Inches  
Min.  
Typ.  
Max.  
Typ.  
Max.  
A
B
4.4  
1.45  
14.35  
0.5  
4.6  
1.55  
15.60  
0.7  
0.173  
0.057  
0.565  
0.020  
0.106  
0.622  
0.815  
0.594  
0.213  
0.134  
0.161  
0.047  
0.181  
0.061  
0.614  
0.028  
0.114  
0.650  
0.831  
0.610  
0.222  
0.144  
0.164  
0.055  
C
D
E
2.7  
2.9  
F
15.8  
20.4  
15.1  
5.4  
16.5  
21.1  
15.5  
5.65  
3.65  
4.17  
1.40  
G
H
J
K
3.4  
ØL  
P
4.08  
1.20  
R
4.60  
0.181  
1. Values
 
in inches are converted from mm and rounded to 4 decimal digits.  
6/8  
DocID18270 Rev 2  

TPDVxx40  
Ordering information  
3
Ordering information  
T
a
ble 7. Ordering information  
Order code  
Marking  
Package  
Weight  
Base qty.  
delivery mode  
TPDV640RG  
TPDV840RG  
TPDV1240RG  
TPDV640  
TPDV840  
TPDV1240  
TOP3  
insulated  
4.5 g  
30  
Tube  
4
Revision history  
Table 8. Document revision history  
Revision Changes  
Date  
30-Mar-2011  
1
Initial release.  
Updated

.  
Updated

.  
10-Jun-2015  
2
Format updated to current standard.  
DocID18270 Rev 2  
7/8  
8

TPDVxx40  
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and  
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on  
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order  
acknowledgement.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or  
the design of Purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2015 STMicroelectronics – All rights reserved  
8/8  
DocID18270 Rev 2