STMicroelectronics-TYN606RG
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TYN606
TYN1006
®
6A SCR
S
STANDARD
Table 1: Main Features
Symbol
A
K
Value
Unit
I
T(RMS)
6
A
G
V
DRM
/V
RRM
I
GT
600 and 1000
15
V
mA
A
DESCRIPTION
K
The
TYN606
and
TYN1006
family of Silicon
Controlled Rectifiers are high performance glass
passivated technology.
A
G
TO-220AB
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
Table 2: Order Codes
Part Numbers
TYN606RG
Marking
TYN606
TYN1006
TYN1006RG
Table 3: Absolute Ratings
(limiting values)
Symbol
Parameter
Value
6
Unit
A
I
T(RMS)
T
c
= 110°C
T
c
= 110°C
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
IT
(AV)
3.8
73
A
t
p
= 8.3 ms
t
p
= 10 ms
Non repetitive surge peak on-state
current
I
TSM
T
j
= 25°C
A
70
²
²
t
p
= 10 ms
T
j
= 25°C
T
j
= 125°C
24.5
I t
I t Value for fusing
A
2
S
Critical rate of rise of on-state current
I
G
= 100 mA , dI
G
/dt = 0.1 A/µs
dI/dt
50
A/µs
I
GM
P
G(AV)
P
GM
t
p
= 20 µs
T
j
= 125°C
T
j
= 125°C
Peak gate current
4
1
A
Average gate power dissipation
Maximum gate power
W
W
t
p
= 20 µs
T
j
= 125°C
10
V
DRM
V
RRM
TYN606
600
1000
T
j
= 125°C
Repetitive peak off-state voltage
V
TYN1006
T
stg
T
j
– 40 to + 150
– 40 to + 125
Storage junction temperature range
Operating junction temperature range
°C
°C
T
L
Maximum lead temperature for soldering during 10s at 2mm from case
260
February 2006
REV. 2
1/6
TYN606 / TYN1006
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
Test Conditions
R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 k
Ω
Value
15
Unit
mA
V
I
GT
MAX.
MAX.
MIN.
TYP.
MAX.
TYP.
V
D
= 12 V
(D.C.)
V
GT
V
GD
t
gt
1.5
0.2
2
T
j
= 110°C
T
j
= 110°C
V
V
D
= V
DRM
I
G
= 40 mA
dI
G
/dt = 0.5 A/µs
I
T
= 100 mA
Gate open
I
G
= 1.2 x I
GT
µs
I
H
30
mA
mA
I
L
50
Linear slope up to:
V
D
= 67
% V
DRM
Gate open
dV/dt
V
TM
MIN.
200
V/µs
I
TM
= 12 A
tp = 380 µs
MAX.
1.6
10
2
V
T
j
= 25°C
µA
mA
I
DRM
I
RRM
V
DRM
= V
RRM
MAX.
TYP.
T
j
= 110°C
t
q
V
D
= 67
% V
DRM
I
TM
= 12 A
V
R
= 25 V
dI
TM
/dt = 30 A/µs
dV
D
/dt = 50 V/µs
T
j
= 110°C
70
µs
Table 5: Thermal Resistance
Symbol
Parameter
Value Unit
R
th(j-c)
R
th(j-a)
Junction to case (D.C.)
Junction to ambient
2.5
60
°C/W
°C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (T
amb
and T
lead
)
P(W)
P(W)
T
(°C)
lead
7
7
6
R
th
= 15°C/W
R
th
= 10°C/W
R
th
= 5°C/W
R
th
= 0°C/W
α
= 180°
6
110
DC
α
= 180°
α
= 120°
5
5
4
3
2
1
0
α
= 90°
α
= 60°
4
115
120
125
α
= 30°
3
2
360°
1
I
(A)
T(AV)
T
(°C)
amb
α
0
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2/6
TYN606 / TYN1006
Figure 3: Average on-state current versus case
temperature
Figure 4: Relative variation of thermal
impedance versus
pulse duration
I
(A)
K=[Z
/R
]
T(AV)
th(j-c) th(j-c)
7
6
5
4
3
2
1
0
1
D.C.
Z
th(j-c)
α
= 180°
Z
th(j-a)
0.1
t (s)
p
T
(°C)
case
0.01
0
10
20
30
40
50
60
70
80
90 100
110 120 130
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5: Relative variation of gate trigger
current versus junction temperature
Figure 6: Surge peak on-state current versus
number of cycles
I
,I ,I [T
] / I
,I ,I [T
=25°C]
GT
H
L
j
GT
H
L
j
I (A)
TSM
2.5
2
80
70
60
t
p
=10ms
One cycle
50
40
30
20
10
0
1.5
T
j
initial=25°C
I
GT
1
I
H
& I
L
0.5
0
T (°C)
j
Number of cycles
1
10
100
1000
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100
110
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 8: On-state characteristics (maximum
values)
(A), I
2
t (A
2
s)
I (A)
TM
I
TSM
100
T
j
initial = 25°C
T
j
=max
I
TSM
100
10
T
j
=25°C
I
2
t
T
j
max.:
V
t0
=1.0V
R
d
=46m
Ω
V
(V)
t (ms)
p
TM
1
10
1
2
3
4
5
1
2
5
10
3/6
TYN606 / TYN1006
Figure 9: Ordering Information Scheme
TYN
6
06 RG
Standard SCR series
Voltage
6 = 600V
10 = 100V
Current
06 = 6A
Packing mode
RG =
T
u
be
Table 6: Product Selector
V
o
ltage (xx)
Part Numbers
Sensitivity
Package
600 V
1000 V
TYN606RG
X
15 mA
15 mA
TO-220AB
TO-220AB
TYN1006RG
X
Figure 10: TO-220AB Package Mechanical Data
DIMENSIONS
Millimeters
RE
F
.
Inches
Min. Typ. Max. Min. Typ. Max.
C
B
A
a1
15.20
15.90 0.598
0.625
Ø I
b2
3.75
0.147
L
a2 13.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
F
B
b1
b2
C
c1
c2
e
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
A
I4
l3
l2
c2
a1
a2
F
ØI
M
c1
I4 15.80
16.40 16.80 0.622 0.646 0.661
b1
e
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
4/6
TYN606 / TYN1006
Table 7: Ordering Information
Ordering type
TYN606RG
Marking
Package
Weight Base
qty Delivery
mode
TYN606
TO-220AB
2.3 g
50
Tube
TYN1006RG
TYN1006
Table 8: Revision History
Date
Revision
Description of Changes
Sep-2001
1A
First issue.
TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.
13-Feb-2006
2
5/6
TYN606 / TYN1006
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2006 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
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