STMicroelectronics-X0115ML
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X0115ML
Datasheet
0.8 A sensitive gate SCR thyristor in SOT23-3L
A
K
Features
•
•
•
•
•
On-state rms current, 0.8 A sensitive
Repetitive peak off-state voltage, 600 V
Non-repetitive surge peak off-state voltage, 750 V
Narrow sensitive gate current range [30 to 150] µA
Compact SOT23-3L package:
G
A
–
–
Creepage distance of 1.1 mm
9 mm² footprint
G
K
Applications
SOT23-3L
•
•
•
•
•
Ground-fault circuit interrupter (GFI)
Arc-fault circuit interrupter (AFCI)
Overvoltage crowbar protection in power supplies
Capacitive ignition circuits
Low consumption triggering switches
Description
Thanks to highly sensitive triggering levels, X0115ML SCR thyristor is suitable for
all applications where available gate current is limited. The X0115ML offers a high
blocking voltage of 600
V
,
a
nd a surge peak voltage of 750
V
,
i
deal for applications
like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI).
Product status link
The SOT23-3L package provides the smallest SCR footprint while keeping 1.1 mm
creepage distance, guaranteeing 120 V functional insulation (UL-840) at level 2
pollution degree without extra certification.
Product summary
I
0.8 A
600 V
T(RMS)
V
/V
DRM RRM
V
/V
750 V
DSM RSM
I
[30-150] µA
GT
DS13776
–
Rev 3
–
January 2022
For further information contact your local STMicroelectronics sales office.
X0115ML
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameters
Symbol
Value
Unit
A
I
On-state RMS current (180° conduction angle)
0.8
0.5
7.6
7
T(RMS)
T
= 41 °C
C
I
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
A
T(AV)
t =
8.3 ms
p
T =
25 °C
j
(T initial
= 25 °C)
I
t =
10 ms
p
j
A
TSM
t =
8.3 ms
p
T
= 105 °C
AMB
One surge every 500 ms, 50 surges
5
2
2
2
t =
10 ms
p
T =
25 °C
j
0.25
I t
I t
value for fusing
A s
Critical rate of rise of on-state current
T =
25 °C
dl/dt
/ V
f = 60 Hz
75
A/µs
j
I
= 2 x I
, t
≤ 100 ns
GT r
G
V
T =
125 °C
j
Repetitive peak off-state voltage
Non repetitive surge peak off-state voltage
Peak forward gate current
600
750
V
V
DRM
RRM
RSM
V
/ V
t =
10 ms
p
T =
25 °C
j
DSM
I
t =
20 µs
p
T =
125 °C
j
1.2
A
GM
P
T =
125 °C
j
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
0.2
W
°C
°C
G(AV)
T
-40 to +150
-40 to +125
stg
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Parameters
Symbol
Value
Min. 30
Unit
I
µA
GT
V
= 12
V
, R
=
3
3 Ω
Max.
Max.
Min.
Min.
Max.
Max.
Min.
150
0.8
0.2
5
D
L
V
V
V
GT
V
V
I
= V
, R
= 3.3 kΩ, R
= 1 kΩ, T
= 125 °C
DRM L
GK j
GD
D
V
= 10 µA
V
RG
RG
I
I =
50 mA, gate open, R
= 1 kΩ
5
mA
mA
V/µs
H
T
GK
I
I
= 1.2 I
, R
= 1 kΩ
6
L
G
GT
GK
V
D
= 67 % V
, gate open, R
= 1 kΩ, T
= 125 °C
DRM GK
j
dV/dt
80
Table 3.
Static characteristics
Test conditions
Symbol
Value
Unit
V
V
I
= 1.6 A, t
= 380 µs
T =
25 °C
j
Max.
1.7
TM
TM
p
V
T =
125 °C
Threshold on-state voltage
Dynamic resistance
Max. 1.06
V
TO
j
R
T =
125 °C
j
Max.
540
1
mΩ
µA
µA
d
T =
25 °C
j
I
/ I
V =
V
, V
= V
, R
= 1 kΩ
RRM GK
Max.
DRM RRM
T
DRM
T
T =
125 °C
j
150
DS13776
–
Rev 3
page 2/10
X0115ML
Characteristics (curves)
Table 4.
Thermal resistance
Parameters
Symbol
Value Unit
R
Junction to lead (DC)
Typ.
Typ.
60
th(j-l)
°C/W
2
R
400
Junction to ambient (DC) for 5 cm
copper surface
th(j-a)
1.1
Characteristics (curves)
Figure 1.
Maximum average power dissipation versus
average on-state current
Figure 2.
Average and DC on-state current versus lead
temperature
I
(A)
P(W)
1.0
T
(AV)
1.0
0.8
0.6
0.4
0.2
0.0
α = 180 °
DC
DC
α = 120 °
0.8
α = 90 °
α = 60 °
0.6
0.4
0.2
0.0
α = 30 °
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
360 °
I
(A)
α
T
(AV)
T (°C)
L
0
25
50
75
100
125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 4.
Average and D.C. on-state current versus
ambient temperature
Figure 3.
On-state characteristics (maximum values)
I
(A)
TM
I
(A)
10.0
T
(AV)
0.3
T max:
125 °C
j
V
= 1.06 V
t0
Rd = 540 mΩ
T =
125 °C
j
DC
0.2
0.1
α = 180 °
1.0
T =
25 °C
j
T (°C)
V
(V)
TM
a
0.0
0.1
0.0
1.0
2.0
3.0
4.0
5.0
0
25
50
75
100
125
DS13776
–
Rev 3
page 3/10
X0115ML
Characteristics (curves)
Figure 5.
Relative variation of thermal impedance junction
Figure 6.
Surge peak on-state current versus number of
to case and junction to ambient versus pulse duration
cycles
K = [Z
/ R
]
th(j-a) th(j-a)
I
(A)
TSM
1.00
0.10
0.01
8
7
6
5
4
3
2
1
0
Z
th(j-c)
Non repetitive T
= 25 °C
j
t
p
=10ms
One cycle
Z
th(j-a)
Repetitive T
= 41 °C
c
Number of cycles
t
P
(s)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1
10
100
1000
Figure 8.
Relative variation of gate trigger current, holding
current and latching current versus junction temperature
(typical values)
Figure 7.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
I
(A)
TSM
I
I
[ T
] / I
I
I [
T =
25 °C]
1000
100
10
1
H, L
j
GT H, L
j
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T initial
= 25 °C
j
dl/dt limitation
A/µs
I
GT
I
TSM
I
I
H and
L
t (ms)
p
T (°C)
j
0
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120
Figure 9.
Relative variation of holding current versus
gate-cathode resistance (typical values)
Figure 10.
Relative variation of static dV/dt immunity
versus junction temperature
I
H
[R
g
k
] / I
H
[R
g
k
=1k
]
Ω
dV/dt [T
j
] / dV/dt [T
j
= 125 °C]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
V
= V
= 402 V
R
D
3
2
1
0
T (°C)
j
R
gk
(kΩ)
1.E-01
1.E+00
1.E+01
25
50
75
100
125
DS13776
–
Rev 3
page 4/10
X0115ML
Characteristics (curves)
Figure 11.
Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values)
Figure 12.
Relative variation of dV/dt immunity versus
gate-cathode capacitance (typical values)
dV/dt[R
g
k
] / dV/dt[R
g
k
=1k
]
Ω
dV/dt[C
g
k
] / dV/dt[R
g
k
=1k
]
Ω
100.0
10.0
1.0
100
10
1
V
D
= 402 V
V
D
= 402 V
= 1 kΩ
R
gk
C (nf)
gk
R
gk
(kΩ)
0.1
1
10
1.0E-01
1.0E+00
1.0E+01
Figure 13.
Typical thermal resistance junction to ambient versus copper surface under anode (epoxy FR4,
e
Cu
= 35µm, SOT-23-3L
R
th(j-a)
(°C/W)
500
SOT23-3L
Epoxy printed board FR4, copper thickness: 35 μm
400
300
200
100
0
S
Cu
(cm²)
90 100
0
10
20
30
40
50
60
70
80
DS13776
–
Rev 3
page 5/10
X0115ML
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
SOT23-3L package information
•
•
•
Lead-free package
Halogen free molding resin
Epoxy meets UL94, V0
Figure 14.
SOT23-3L package outline
DS13776
–
Rev 3
page 6/10
X0115ML
SOT23-3L package information
Table 5.
SOT23-3L package mechanical data
Dimensions
Ref.
Millimeters
Inches
Min.
0.89
0
Typ.
Max.
1.25
0.15
0.51
0.20
3.04
1.75
1.05
2.10
3.00
0.61
Min.
0.035
0
Typ.
Max.
A
A1
B
0.0493
0.006
0.30
0.085
2.75
1.20
0.85
1.70
2.10
0.25
0.0118
0.0033
0.1082
0.0472
0.0334
0.0669
0.0826
0.0098
0.0201
0.0079
0.1197
0.0689
0.0414
0.0827
0.1182
0.0241
C
D
E
e
0.95
1.90
0.0374
0.0748
e1
H
L
L1
S
0.55
0.0217
0.35
0°
0.65
8°
0.0137
0°
0.0256
8°
a
Figure 15.
Footprint recommendations, dimensions in mm
DS13776
–
Rev 3
page 7/10
X0115ML
Ordering information
3
Ordering information
Figure 16.
Ordering information scheme
X01
15
M
L
SCR series
X01 = Sensitive SCR up to 1 A
Gate sensitivity
15 = 150 µA
Voltage
M = 600 V
Package
L = SOT23-3L
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
X0115ML
X1M
SOT23-3L
0.01 mg
3000
T
a
pe and reel
DS13776
–
Rev 3
page 8/10
X0115ML
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DS13776
–
Rev 3
page 10/10
