STMicroelectronics-Z0402MF1AA2
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Z04
Standard
4 A
T
r
iacs
Main features
A2
A1
Symbol
I
T(RMS)
Value
4
Unit
A
G
V
DRM
/V
RRM
600 to 800
3 to 25
V
I
GT (Q )
mA
1
Description
A1
A2
G
The
Z04
series is suitable for general purpose AC
switching applications. They can be found in
applications such as home appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,…
TO202-3
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Order codes
Part Number
Marking
Z04xxyF
(1)
1. xx
= sensitivity,
y = voltage
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
T
amb
= 25° C
I
T(RMS)
RMS on-state current (full sine wave)
4
A
T
l
= 30° C
t = 20 ms
t = 16.7 ms
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
20
21
Non repetitive surge peak on-state current
(full cycle, T
j
initial = 25° C)
I
TSM
A
²
²
²
I t
I t Value for fusing
2.2
A s
Critical rate of rise of on-state current I
G
2 x I
GT
, t
r
≤
100 ns
=
dI/dt
F = 120 Hz
T
j
= 125° C
20
A/µs
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 125° C
T
j
= 125° C
1.2
0.2
A
P
G(AV)
Average gate power dissipation
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
– 40 to + 150
– 40 to + 125
° C
May 2006
Rev 7
1/8
8
Characteristics
Z04
1
Characteristics
Table 2.
Symbol
Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Z04
Test Conditions
Quadrant
Unit
02
05
09
10
MAX
.
(1)
I
GT
I – II – III – IV
ALL
3
5
10
25
mA
V
V
D
= 12 V
R
L
= 30
Ω
MAX
.
V
GT
V
GD
1.3
0.2
V
D
= V
DRM
R
L
= 3.3 k
Ω
T
j
= 125° C
ALL
MIN.
V
MAX
.
(2)
I
H
I
T
= 50 mA
I
G
= 1.2 I
GT
3
5
10
25
mA
I – III – IV
II
6
10
15
20
1
15
25
100
2
25
50
200
5
MAX
.
I
L
mA
12
10
dV/dt
(2)
V
D
= 6
% V
DRM
gate open T
j
= 110° C
(dV/dt)c
(2)
(dI/dt)c = 1.8 A/ms
T
j
= 110° C
MIN.
V/µs
V/µs
MIN. 0.5
1. minimum
IGT is guaranted at 5% of IGT max.
2. for
both polarities of A2 referenced to A1.
T
a
ble 3.
Symbol
Static Characteristics
Test Conditions
t
p
= 380 µs
T
j
= 25° C
Value
Unit
(1)
V
TM
I
TM
= 5.5 A
MAX.
2.0
0.95
180
5
V
V
V
to
Threshold voltage
T
j
= 125° C
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
MAX.
MAX.
R
d
Dynamic resistance
m
Ω
µA
mA
I
DRM
I
RRM
V
DRM
= V
RRM
MAX.
0.5
1. for
both polarities of A2 referenced to A1.
T
a
ble 4.
Symbol
Thermal resistances
Parameter
Value
Unit
R
th(j-I)
R
th(j-a)
Junction to lead (AC)
Junction to ambient
15
° C/W
° C/W
100
2/8
Z04
Characteristics
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2.
RMS on-state current versus
ambient temperature (full cycle)
P(W)
I
(A)
T(RMS)
7
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
R
= R
th(j-l)
th(j-a)
6
5
4
3
2
1
0
R
th(j-a)
= 100°C/W
I (A)
T(RMS)
T
amb
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
Figure 3.
Relative variation of thermal
impedance versus pulse
duration
Figure 4.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
I
, I
, I
[T ] / I
, I
, I
[T =25°C]
K=[Z
/R
]
GT
H
L
j
GT
H
L
j
th(j-a) th(j-a)
2.5
2.0
1.5
1.0
0.5
0.0
1E+0
1E-1
1E-2
1E-3
I
GT
I
H
& I
L
T (°C)
j
t (s)
p
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
-40
-20
0
20
40
60
80
100
120
140
Figure 5.
Surge peak on-state current
versus number of cycles
Figure 6.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
p
< 10 ms and corresponding
value of I
2
t
2 2
(A), I
t (A
s)
I
(A)
I
TSM
TSM
25
20
15
10
5
500
100
T
j
initial = 25°C
t=20ms
One cycle
dI/dt limitation:
20A/µs
I
TSM
Non repetitive
initial = 25°C
T
j
Repetitive
= 25°C
10
T
amb
2
I
t
t
p
(ms)
Number of cycles
0
1
1
0.01
10
100
1000
0.10
1.00
10.00
3/8
Characteristics
Z04
Figure 7.
On-state characteristics
(maximum values)
Figure 8.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
I
(A)
TM
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
20.0
10.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
j
= T max.
j
Z0410
1.0
0.1
T
j
= 25°C
Z0409
Z0402
Z0405
T
j
=max.
V
t0
=0.95 V
R
d
=180 m
Ω
V
(V)
(dV/dt)c (V/µs)
TM
0.1
1.0
10.0
100.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 9.
Relative variation of critical
rate of decrease of main current
versus junction temperature
(dI/dt)c [T ] / (dI/dt)c [T
Specified]
j
j
6
5
4
3
2
1
0
T (°C)
j
0
25
50
75
100
125
4/8
Z04
Ordering information scheme
2
Ordering information scheme
Z 04 xx y F
[BLANK]
0AA2
Triac series
Current
04 = 4A
Sensitivity
02 = 3mA
05 = 5mA
09 = 10mA
10 = 25mA
Voltage
M = 600V
S = 700V
N = 800V
Package
F = TO202-3
Packing mode
0AA2 =
T
u
be
Table 5.
Product selector
V
o
ltage
Part Number
Sensitivity
Type
Package
600 V
700 V
800 V
Z0402MF
Z0402SF
Z0402NF
Z0405MF
Z0405SF
Z0405NF
Z0409MF
Z0409SF
Z0409NF
Z0410MF
Z0410SF
Z0410NF
X
X
X
X
X
X
X
X
X
X
X
X
3 mA
3 mA
3 mA
5 mA
5 mA
5 mA
Standard
TO202-3
10 mA
10 mA
10 mA
25 mA
25 mA
25 mA
5/8
Package information
Z04
3
Package information
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
RE
F
.
Inches
A
C
D
F
10.1
0.398
A
7.3
0.287
0.413
10.5
C
D
1.5
0.059
H
J
0.51
1.5
0.020
0.059
0.177
O
P
J
F
H
M
N
N1
O
4.5
N1
5.3
0.209
2.54
0.100
N
M
1.4
0.7
0.055
0.028
P
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
A
CK is an ST trademark.
6/8
Z04
Ordering information
4
Ordering information
Ordering type
Marking
Weight
Base qty
Delivery mode
Z04xxyF 0AA2
(1)
0.8 g
50
T
u
be
1. xx
= sensitivity,
y = voltage
5
Revision history
Date
Revision
Description of Changes
Oct-2001
4
5
Last update.
TO202-3 delivery mode changed from bulk to tube.
ECO
P
ACK statement added.
13-Feb-2006
Reformatted to current standard. Lead marking changed
on page 1
31-Mar-2006
12-05-2006
6
7
T
y
pographical error for (dV/dt)c corrected in
T
a
ble 2.
7/8
Z04
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