STMicroelectronics-Z0410MH

Part #STMicroelectronics-Z0410MH
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STMicroelectronics-Z0410MH
Z0410MH  
Datasheet  
4 A – Triac in IPAK package  
Features  
A2  
•
•
•
•
•
•
•
4 A Triac  
V

DRM

/ V

RRM

= 600 V and V

DSM

/ V

RSM

= 750 V  
125 °C maximum junction temperature T

j  

IPAK package  
A1  
A2  
G
4 quadrants triacs with I

GT

= 25 mA  
Halogen-free molding, lead-free plating  

ECOPACK2

compliant  
IPAK  
Applications  
•
•
•
Product status link  
Product summary  
Description  
I
4 A  
T(RMS)  
The Z0410MH series is 4 A Triac housed in compact through-hole IPAK package.  
This 4 quadrants device is suited to home appliances or power tools and industrial  
systems and drives loads up to 4 A.  
V
/V  
750 V  
25 mA  
125 °C  
DSM RSM  
I
GT  
T max.  
j
DS14061
–
Rev 1
–
September 2022  
For further information contact your local STMicroelectronics sales office.  

Z0410MH  
Characteristics  
1
Characteristics  
Table 1.
Absolute maximum ratings (limiting values)  
Parameter  
Symbol  
Value  
4
Unit  
I
T =
 
107 °C  
RMS on-state current (full sine wave)  
A
T(RMS)  
c
t = 16.7 ms  
t = 20 ms  
16  
Non repetitive surge peak on-state current (full cycle,  
T initial
 
= 25 °C)  
j
I
A
TSM  
15  
2
2
2
t =
 
10 ms  
p
1.5  
I t  
I t
 
value for fusing  
A s  
Critical rate of rise of on-state current, I
 
= 2 x I
 
, tr  
≤ 100 ns, f = 120 Hz  
G
GT  
T =
 
125 °C  
dl/dt  
/V  
50  
A/µs  
j
V
T =
 
125 °C  
j
Repetitive peak off-state voltage  
600  
750  
V
V
DRM RRM  
V
/V  
Non Repetitive peak off-state voltage, 10 ms  
Maximum peak gate current  
DSM RSM  
I
1.2  
A
GM  
t =
 
20 µs, T
 
= 125 °C  
p
j
P
Maximum gate power dissipation  
Storage temperature range  
0.5  
W
°C  
°C  
°C  
GM  
T
-40 to +125  
-40 to +125  
260  
stg  
T
Operating junction temperature range  
j
T
Maximum lead temperature for soldering during 10 s  
L
Table 2.
Electrical characteristics (T

j

= 25 °C, unless otherwise specified)  
Symbol  
Test conditions  
Value  
25  
Unit  
mA  
V
V
V
V
= 12
V
, R
 
=
3
3 Ω  
I
Max.  
Max.  
D
D
D
L
GT  
V
= 12 V, R
 
= 33 Ω  
1.3  
GT  
L
V
= V  
, R
 
= 3.3 kΩ  
T =
 
125 °C  
Min.  
Max.  
Max.  
Max.  
0.2  
25  
50  
25  
V
GD  
DRM  
L
j
I-III-IV  
II  
mA  
mA  
mA  
I
I =
 
1.2 x I  
G GT  
L
I =
 
500 mA, gate open  
T
I
H
dV/dt

(dV/dt)c

V
= 67 % V  
; V
 
= 67 % V  
, gate open
 
T =
 
110 °C  
Min.  
Min.  
200  
5
V/µs  
V/µs  
D
DRM  
R
RRM  
j
T =
 
110 °C  
j
(dI/dt)c = 1.8 A/ms  
1. For
 
both polarities of OUT pin referenced to COM pin.  
2. For
 
both polarities of A2 referenced to A1.  
Table 3.
Static characteristics  
T
Symbol  
Test conditions  
= 5.5 A, t
 
= 380 µs  
Value  
2
Unit  
V
j
V
I
25 °C  
Max.  
Max.  
Max.  
TM  
p
TM  
V
Threshold voltage  
Dynamic resistance  
125 °C  
0.95  
V
TO  
R
125 °C  
25 °C  
180  
5
mΩ  
µA  
D
I
/I  
V
= V
 
= V  
= V  
DRM RRM  
Max.  
DRM RRM  
D
R
125°C  
0.5  
mA  
1. For
 
both polarities of A2 referenced to A1.  
DS14061
–
Rev 1  
page 2/10  
 
 
 

Z0410MH  
Characteristics  
Table 4.
Thermal resistance  
Parameter  
Symbol  
Value  
3
Unit  
°C/W  
°C/W  
R
Junction to case (AC)  
Junction to ambient  
Max.  
Typ.  
th(j-c)  
R
th(j-a)  
70  
DS14061
–
Rev 1  
page 3/10  

Z0410MH  
Characteristics (curves)  
1.1  
Characteristics (curves)  
Figure 1.
Maximum power dissipation versus on-state  
RMS current (full cycle)  
Figure 2.
Average and DC on-state current versus case  
temperature  
Figure 3.
On-state RMS current versus ambient  
temperature (full cycle)  
Figure 4.
Relative variation of thermal impedance versus  
pulse duration  
Figure 5.
Relative variation of gate triggering current and  
voltage versus junction temperature (typical values)  
Figure 6.
Surge peak on-state current versus number of  
cycles  
DS14061
–
Rev 1  
page 4/10  

Z0410MH  
Characteristics (curves)  
Figure 7.
Non repetitive surge peak on-state current for a  
sinusoidal pulse with width t

p

< 10 ms and corresponding  
Figure 8.
On-state characteristics (maximum values)  
value of I²t  
Figure 9.
Relative variation of critical rate of decrease of
 
Figure 10.
Relative variation of critical rate of decrease of  
main current versus (dV/dt)c (typical values)
 
main current versus junction temperature  
Figure 11.
Relative variation of static dV/dt immunity versus junction temperature  
DS14061
–
Rev 1  
page 5/10  

Z0410MH  
Ordering information  
2
Ordering information  
Figure 12.
Ordering information scheme  
Table 5.
Ordering information  
Order code  
Marking  
Package  
Weight  
Base qty.  
Delivery mode  
Z0410MH  
Z0410MH  
IPAK  
0.31 g  
75  
Tube  
DS14061
–
Rev 1  
page 6/10  

Z0410MH  
Package information  
3
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of

packages,  
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product  
status are available at:

. ECOPACK is an ST trademark.  
3.1  
IPAK package information  
•
Molding compouned resin is halogen free and meets UL94 flammability standard, level V0  
•
Lead-free package leads plating  
Figure 13.
IPAK package outline  
DS14061
–
Rev 1  
page 7/10  

Z0410MH  
IPAK package information  
Table 6.
IPAK package mechanical data  
Dimensions  
Ref.  
MillimetersInches (for reference only)  
Min.  
2.20  
0.90  
0.64  
Typ.  
Max.  
2.40  
1.10  
0.90  
0.95  
5.43  
Min.  
Typ.  
Max.  
0.094  
0.035  
0.035  
0.037  
A
A1  
b
0.086  
0.025  
b2  
b4  
B5  
c
5.20  
0.30  
0.012  
0.45  
0.46  
6
0.60  
0.60  
6.20  
6.65  
c2  
D
E
6.40  
0.252  
0.173  
0.262  
0.181  
e
2.28  
0.090  
0.634  
e1  
H
4.40  
4.60  
16.10  
L
9
9.60  
1.20  
1.25  
0.354  
0.031  
0.377  
0.047  
0.049  
L1  
L2  
V1  
0.8  
0.80  
10°  
0.031  
10°  
DS14061
–
Rev 1  
page 8/10  

Z0410MH  
Revision history  
Table 7.
Document revision history  
Date  
05-Sep-2022  
Revision  
Changes  
1
Initial release.  
DS14061
–
Rev 1  
page 9/10  

Z0410MH  
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of  
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ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, refer to

. All other product or service names  
are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2022 STMicroelectronics – All rights reserved  
DS14061
–
Rev 1  
page 10/10