SUPSiC-GC2M0280120D
| Part # | SUPSiC-GC2M0280120D |
Download  | SUPSiC-GC2M0280120D |
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Features
V
DS
I
D
1200 V
11 A
•
•
•
•
•
•
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
@
25˚C
R
DS(on)
280 m
Ω
Benefits
•
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
TO-247-3
Package
•
•
•
•
LED Lighting Power Supplies
High Voltage DC/DC Converters
Industrial Power Supplies
HVAC
Part Number
Package
TO-247-3
GC2M0280120D
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
1200
-10/+25
-5/+20
11
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage
Gate – Source Voltage
Absolute maximum values
Recommended operational values
V
GS
= 20
V
,
T
C
= 25 °C
V
GS
= 20
V
,
T
C
= 100 °C
Continuous Drain Current
Pulsed Drain Current
A
A
Fig. 19
I
D
7.5
20
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
T
C
=25 °C,
T
J
= 150 °C
Power Dissipation
69.4
W
˚C
˚C
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6 mm (0.063”) from case for 10s
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M3 or 6-32 screw
M
d
GC2M0280120D Rev.
B, 10-2019
1
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
2.0
Typ.
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= 100 μA
3.1
2.7
1
4
V
DS
= V
GS
, I
D
= 1.25mA
V
V
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS,
I
D
= 1.25mA, T
J
= 150 °C
V
DS
= 1200
V
,
V
GS
= 0 V
V
GS
= 20
V
,
V
DS
= 0 V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
370
μA
nA
320
540
2.6
V
GS
= 20
V
,
I
D
= 6 A
V
GS
= 20
V
,
I
D
= 6 A, T
J
= 150 °C
DS
= 20
V
,
I
DS
= 6 A
R
DS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
Fig. 4,5,6
Fig. 7
V
g
fs
S
2.5
V
DS
= 20
V
,
I
DS
= 6 A, T
J
= 150 °C
C
iss
C
oss
C
rss
E
oss
E
ON
Input Capacitance
267
31
V
GS
= 0 V
Output Capacitance
pF
Fig. 17,18
V
DS
= 1000 V
Reverse Transfer Capacitance
C
oss
Stored Energy
4
f = 1 MHz
AC
V
= 25 mV
17
μJ
μJ
Fig 16
Fig. 25
V
DS
= 800
V
,
V
GS
= -5/20
V
,
Turn-On Switching Energy (Body Diode)
111
I
D
= 6A,
R
G(ext)
= 2.5Ω, L= 404 μH
FWD = Internal Body Diode of MOSFET
E
OFF
E
ON
E
OFF
t
d(on)
t
r
Turn Off Switching Energy (Body Diode)
Turn-On Switching Energy (External Diode)
Turn Off Switching Energy (External Diode)
Turn-On Delay Time
10
95
9.8
6
V
DS
= 800
V
,
V
GS
= -5/20
V
,
I
D
= 6A,
R
G(ext)
= 2.5Ω, L= 404 μH
FWD = External SiC Diode
μJ
Fig. 25
Fig. 27
V
DD
= 800
V
,
V
GS
= -5/20 V
I
D
= 6 A,
R
G(ext)
= 2.5 Ω,
Inductive Load
Timing relative to V
DS
Per IEC60747-8-4 pg 21
Rise Time
19
10
ns
t
d(off)
Turn-Off Delay Time
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Fall Time
16
10
6
,
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Ω
f = 1 MHz
V
AC
= 25 m
V
,
E
SR of C
ISS
V
DS
= 800
V
,
V
GS
= -5/20 V
I
D
= 6 A
7
nC
Fig. 12
Per IEC60747-8-4 pg 21
19
GC2M0280120D Rev.
B, 10-2019
2
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.3
3.8
V
V
V
GS
= – 5
V
,
I
SD
= 3 A
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
V
GS
= – 5
V
,
I
SD
= 3 A, T
= 150 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode Pulse Current
12
20
A
V
GS
= – 5
V
,
T
C
= 25 °C
Note 1
V
GS
= – 5
V
,
Pulse width t
P
limited by T
jmax
Reverse Recovery time
17
48
ns
V
GS
= – 5
V
,
I
SD
= 6 A, V
R
= 800 V
dif/dt = 2985 A/µs
Note 1
Note 1
Q
rr
Reverse Recovery Charge
nC
I
rrm
t
rr
Peak Reverse Recovery Current
Reverse Recovery time
5
25
45
4
A
ns
nC
A
V
GS
= – 5
V
,
I
SD
= 6 A, V
R
= 800 V
dif/dt = 1000 A/µs
Q
rr
I
rrm
Reverse Recovery Charge
Peak Reverse Recovery Current
Note (1): When using SiC Body Diode the maximum recommended V
GS
= -5V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
R
θ
JC
R
θ
JC
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
1.53
1.8
40
°C/W
Fig. 21
GC2M0280120D Rev.
B, 10-2019
3
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
16
14
12
10
8
16
14
12
10
8
V
GS
= 20V
V
GS
= 20V
Conditions:
T
j
= -55 °C
tp = < 200 µs
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 18V
V
GS
= 18V
V
GS
= 16V
V
GS
= 14V
V
GS
= 16V
V
GS
= 14V
V
GS
= 12V
V
GS
= 12V
V
GS
= 10V
6
6
V
GS
= 10V
4
4
2
2
0
0
0.0
2.5
5.0
7.5
10.0
12.5
0.0
2.5
5.0
7.5
10.0
12.5
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1.
Output Characteristics T
J
= -55 °C
Figure 2.
Output Characteristics T
J
= 25 °C
16
14
12
10
8
2.0
Conditions:
T
j
= 150 °C
tp = < 200 µs
Conditions:
DS
= 6 A
V
GS
= 20 V
p
< 200 µs
V
GS
= 20V
I
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 18V
t
V
GS
= 16V
V
GS
= 12V
V
GS
= 14V
V
GS
= 10V
6
4
2
0
0.0
2.5
5.0
7.5
10.0
12.5
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
j
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 150 °C
Figure 4.
Normalized On-Resistance vs. Temperature
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
Conditions:
V
GS
= 20 V
p
< 200 µs
Conditions:
I
DS
= 6 A
t
t
p
< 200 µs
T
j
= 150 °C
V
GS
= 14 V
V
GS
= 16 V
GS
= 18 V
V
T
j
= 25 °C
T
j
= -55 °C
V
GS
= 20 V
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
Drain-Source Current, I
DS
(A)
Junction Temperature, T
j
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC2M0280120D Rev.
B, 10-2019
4
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
10
9
8
7
6
5
4
3
2
1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
-2
T
J
= 150 °C
V
GS
= -5 V
V
GS
= 0 V
-4
-6
T
J
= 25 °C
V
GS
= -2 V
T
J
= -55 °C
-8
-10
-12
-14
-16
Conditions:
T
j
= -55°C
t
p
< 200 µs
0
2
4
6
8
10
12
14
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
Figure 7.
Transfer Characteristic For
Various Junction Temperatures
Figure 8.
Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-2
-2
V
GS
= -5 V
V
GS
= -5 V
V
GS
= 0 V
-4
-4
V
GS
= 0 V
-6
-6
V
GS
= -2 V
V
GS
= -2 V
-8
-8
-10
-12
-14
-16
-10
-12
-14
-16
Conditions:
T
j
= 150°C
t
p
< 200 µs
Conditions:
T
j
= 25°C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9.
Body Diode Characteristic at 25 ºC
Figure 10.
Body Diode Characteristic at 150 ºC
5.0
4.0
3.0
2.0
1.0
0.0
25
Conditions:
I
DS
= 6 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
Conditons
V
GS
= V
DS
I
DS
= 1.25 mA
20
15
10
5
0
-5
-50
-25
0
25
50
75
100
125
150
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11.
Threshold Voltage vs. Temperature
Figure 12.
Gate Charge Characteristics
GC2M0280120D Rev.
B, 10-2019
5
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-2
-2
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
-4
-4
V
GS
= 5 V
-6
-6
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
-8
-8
V
GS
= 15 V
-10
-12
-14
-16
-10
-12
-14
-16
V
GS
= 20 V
V
GS
= 20 V
Conditions:
T
j
= -55 °C
t
p
< 200 µs
Conditions:
T
j
= 25 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13.
3rd Quadrant Characteristic at -55 ºC
Figure 14.
3rd Quadrant Characteristic at 25 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
25
0
V
GS
= 0 V
-2
-4
-6
-8
20
15
10
5
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
-10
-12
-14
-16
Conditions:
T
j
= 150 °C
0
t
p
< 200 µs
0
200
400
600
800
1000
1200
Drain-Source Voltage V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Figure 15.
3rd Quadrant Characteristic at 150 ºC
Figure 16.
Output Capacitor Stored Energy
1000
1000
100
10
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
iss
C
iss
100
10
1
C
oss
C
oss
C
rss
C
rss
1
0
50
100
150
200
0
200
400
600
800
1000
1200
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 18.
Capacitances vs. Drain-Source
Figure 17.
Capacitances vs. Drain-Source
Voltage (0-1000 V)
Voltage (0-200 V)
GC2M0280120D Rev.
B, 10-2019
6
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
12
10
8
80
70
60
50
40
30
20
10
0
Conditions:
T
J
≤ 150
°C
Conditions:
T
J
≤ 150
°C
6
4
2
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
10.00
0.5
0.3
Limited by R
DS On
1 µs
10 µs
1.00
0.10
0.01
0.1
100 µs
0.05
100E-3
1 ms
0.02
0.01
100 ms
Conditions:
C
= 25 °C
D = 0,
T
SinglePulse
Parameter:
t
p
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21.
Transient Thermal Impedance
Figure 22. Safe Operating Area
(Junction – Case)
300
250
200
150
100
50
180
160
140
120
100
80
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
DD
= 600 V
E
Total
E
On
E
Total
E
On
V
DD
= 800 V
R
G(ext)
=
2.5 Ω
R
G(ext)
=
2.5 Ω
V
GS
= -5/+20 V
FWD = GC2M0280120D
L =
404 μH
V
GS
= -5/+20 V
FWD =
GC2M0280120D
L =
404 μH
60
40
20
E
Off
E
Off
12
0
0
0
2
4
6
8
10
14
0
2
4
6
8
10
12
14
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Drain Current (V
DD
= 800V)
GC2M0280120D Rev.
B, 10-2019
7
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
200
160
120
80
200
160
120
80
Conditions:
I
DS
= 6 A
V
DD
= 800 V
R
G(ext)
=
2.5 Ω
V
GS
= -5/+20 V
L =
404 μH
FWD =
GC2M0280120D
FWD = GC4D05120A
Conditions:
T =
J
25 °C
E
Total
E
On
V
DD
=
800 V
6 A
I
DS
=
V
GS
=
-5/+20 V
E
Total
E
On
FWD =
GC2M0280120D
404 μH
L =
E
Total with Schottky
E
On with Schottky
40
40
E
Off
with Schottky
E
Off
E
Off
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
40
Conditions:
T
J
= 25 °C
V
DD
= 800
V
I
DS
= 6 A
V
GS
= -5/+20 V
FWD = GC2M0280120D
t
r
30
20
10
0
t
f
t
d(off)
t
d(on)
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 28. Switching Time Definition
Figure 27. Switching Times vs. R
G(ext)
GC2M0280120D Rev.
B, 10-2019
8
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Test Circuit Schematic
GC2M0280120D
2A, 1200V
SiC Schottky
D
1
L=412 uH
V
DC
C
DC
=42.3 uF
GC2M0280120D
D.U.T
Q
1
Figure 30. Clamped Inductive Switching
Waveform Test Circuit
Q
1
R
G
L=412 uH
D.U.T
GC2M0280120D
V
GS
= – 5V
C
DC
=42.3 uF
V
DC
Q
2
R
G
GC2M0280120D
Figure 31. Body Diode Recovery Test Circuit
ESD Ratings
ESD Test
Resulting Classification
ESD-HBM
ESD-CDM
1A (250V – 500V)
C3 (>1000V)
GC2M0280120D Rev.
B, 10-2019
9
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M0280120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Inches
Millimeters
Min
Package TO-247-3
POS
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ
Pin 1 = Gate
•ꢀ
Pin 2, 4 = Drain
S
•ꢀ
Pin 3 = Source
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
GC2M0280120D Rev.
B, 10-2019
10
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
