SUPSiC-GC2M1000170D
| Part # | SUPSiC-GC2M1000170D |
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GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Features
V
DS
I
D
R
DS(on)
1700 V
5.0 A
•
High Speed Switching with Low Capacitances
@
25˚C
•
•
•
•
High Blocking Voltage with Low R
DS(on)
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Halogen Free, RoHS Compliant
1.0
Ω
Benefits
•
•
•
•
Higher System Efficiency
Increased System Switching Frequency
Reduced Cooling Requirements
Increased System Reliability
Applications
TO-247-3
Package
•
•
•
Auxiliary Power Supplies
Switch Mode Power Supplies
High-voltage Capacitive Loads
Ordering Part Number
Package
TO-247-3
GC2M1000170D
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
1700
-10/+25
-5/+20
5.0
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage
Gate – Source Voltage
Absolute maximum values
Recommended operational values
Fig. 19
V
GS
= 20
V
,
T
C
= 25˚C
GS
= 20
V
,
T
C
= 100˚C
Continuous Drain Current
A
I
D
3.5
V
15
69
Pulsed Drain Current
A
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 150 ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M
d
GC2M1000170D Rev.
B, 10-2019
1
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1700
2.0
Typ.
Max.
Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= 100 μA
2.8
2.4
1
4
V
DS
= V
GS
, I
D
= 0.5 mA
V
V
Fig. 11
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS,
I
D
= 0.5 mA, T
J
= 150 °C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
1.4
μA
nA
V
DS
= 1.7 k
V
,
V
GS
= 0 V
V
GS
= 20
V
,
V
DS
= 0 V
0.80
1.4
V
GS
= 20
V
,
I
D
= 2 A
V
GS
= 20
V
,
I
D
= 2 A, T
J
= 150 °C
DS
= 20
V
,
I
DS
= 2 A
R
DS(on)
Drain-Source On-State Resistance
Transconductance
Ω
Fig. 4,5,6
Fig. 7
1.04
1.09
215
19
V
g
fs
S
V
DS
= 20
V
,
I
DS
= 2 A, T
J
= 150 °C
C
iss
C
oss
C
rss
E
oss
E
ON
Input Capacitance
V
GS
= 0 V
Output Capacitance
pF
Fig. 17,18
V
DS
= 1000 V
2.2
10.2
89
Reverse Transfer Capacitance
C
oss
Stored Energy
f = 1 MHz
AC
V
= 25 mV
Fig 16
Fig. 26
μJ
μJ
V
DS
= 1.2 k
V
,
V
GS
= -5/20 V
Turn-On Switching Energy
I
D
= 2 A,
R
G(ext)
= 2.5 Ω,
14
E
OFF
Turn Off Switching Energy
L= 1478 μH, T
J
= 150 °C
5
t
d(on)
t
r
Turn-On Delay Time
Rise Time
V
DD
= 1.2 k
V
,
V
GS
= -5/20 V
I
D
= 2 A, R
G(ext)
= 2.5 Ω,
R
L
= 600 Ω
Timing relative to V
DS
19
14
63
ns
Fig. 27
t
d(off)
Turn-Off Delay Time
Per IEC60747-8-4 pg 83
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Fall Time
,
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
24.8
4
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 1.2 k
V
,
V
GS
= -5/20 V
I
D
= 2 A
12
22
Fig. 12
nC
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
3.8
3.3
V
V
A
V
GS
= – 5
V
,
I
SD
= 1 A, T = 25 °C
J
Fig. 8, 9,
10
V
SD
Diode Forward Voltage
V
GS
= – 5
V
,
I
SD
= 1 A, T
= 150 °C
J
Note 1
I
S
t
rr
Continuous Diode Forward Current
Reverse Recovery Time
4
T
C
= 25 °C
30
31
3
ns
nC
A
V
GS
= – 5
V
,
I
SD
= 2 A T = 150 °C
J
V
R
= 1.2 kV
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
dif/dt = 1135 A/µs
Peak Reverse Recovery Current
Note (1): When using SiC Body Diode the maximum recommended V
GS
= -5V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
R
θ
JC
R
θ
JA
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
1.7
1.8
40
Fig. 21
°C/W
GC2M1000170D Rev.
B, 10-2019
2
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
6
6
5
4
3
2
1
0
V
GS
= 16V
Conditions:
T
j
= -55 °C
tp = < 200 µs
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 14V
V
GS
= 12V
5
V
GS
= 14V
V
GS
= 20V
V
GS
= 20V
V
GS
= 18V
GS
= 16V
V
GS
= 18V
V
4
3
2
1
0
V
GS
= 12V
V
GS
= 10V
V
GS
= 10V
0
4
8
12
16
20
0
4
8
12
16
20
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 °C
Figure 2. Output Characteristics T
J
= 25 °C
6
5
4
3
2
1
0
2.5
Conditions:
T
j
= 150 °C
tp = < 200 µs
Conditions:
DS
= 2 A
GS
= 20 V
p
< 200 µs
V
GS
= 20V
GS
= 18V
I
V
t
V
2.0
1.5
1.0
0.5
0.0
V
GS
= 16V
V
GS
= 14V
V
GS
= 12V
V
GS
= 10V
0
4
8
12
16
20
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
j
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 4.
Normalized On-Resistance vs. Temperature
Figure 3. Output Characteristics T
J
= 150 °C
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.6
1.2
0.8
0.4
0.0
Conditions:
V
GS
= 20 V
p
< 200 µs
Conditions:
I
DS
= 2 A
t
t
p
< 200 µs
T
j
= 150 °C
V
GS
= 14 V
V
GS
= 16 V
V
GS
= 18 V
T
j
= 25 °C
T
j
= -55 °C
V
GS
= 20 V
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
150
Drain-Source Current, I
DS
(A)
Junction Temperature, T
j
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC2M1000170D Rev.
B, 10-2019
3
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
5
-6
-5
-4
-3
-2
-1
0
Conditions:
0
V
DS
= 20 V
tp < 200 µs
V
GS
= 0 V
V
GS
= -5 V
4
3
2
1
0
T
J
= 150 °C
-1
-2
-3
-4
-5
-6
V
GS
= -2 V
T
J
= 25 °C
T
J
= -55 °C
Conditions:
T
j
= -55°C
t
p
< 200 µs
0
2
4
6
8
10
12
14
16
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7.
Transfer Characteristic for
Various Junction Temperatures
Figure 8.
Body Diode Characteristic at -55 ºC
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= -5 V
V
GS
= -5 V
V
GS
= 0 V
V
GS
= -2 V
V
GS
= 0 V
V
GS
= -2 V
-1
-2
-3
-4
-5
-6
-1
-2
-3
-4
-5
-6
Conditions:
T
j
= 25°C
t
p
< 200 µs
Conditions:
T
j
= 150°C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9.
Body Diode Characteristic at 25 ºC
Figure 10.
Body Diode Characteristic at 150 ºC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Conditons
GS
= V
DS
I
DS
= 0.5 mA
Conditions:
I
DS
= 2 A
V
I
GS
= 50 mA
20
15
10
5
V
DS
= 1200 V
T
J
= 25 °C
0
-5
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12.
Gate Charge Characteristics
GC2M1000170D Rev.
B, 10-2019
4
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
-5
-4
-3
-2
-1
0
-5
-4
-3
-2
-1
0
0
0
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 0 V
-1
-2
-3
-4
-5
-6
-1
-2
-3
-4
-5
-6
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
V
GS
= 20 V
Conditions:
T
j
= -55 °C
t
p
< 200 µs
Conditions:
T
j
= 25 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13.
3rd Quadrant Characteristic at -55 ºC
Figure 14.
3rd Quadrant Characteristic at 25 ºC
-5
-4
-3
-2
-1
0
16
14
12
10
8
0
V
GS
= 0 V
-1
-2
-3
-4
-5
-6
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
6
4
2
Conditions:
T
j
= 150 °C
p
< 200 µs
0
t
0
200
400
600
800
1000
1200
Drain to Source Voltage, V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 15.
3rd Quadrant Characteristic at 150 ºC
Figure 16.
Output Capacitor Stored Energy
1000
1000
100
10
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
iss
C
iss
100
10
1
C
oss
C
oss
C
rss
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
Drain-Source Voltage, V
DS
(V)
Figure 18.
Capacitances vs. Drain-Source
Voltage (0-1000 V)
Figure 17.
Capacitances vs. Drain-Source
Voltage (0-200 V)
GC2M1000170D Rev.
B, 10-2019
5
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
Figure 19. Continuous Drain Current Derating vs.
Figure 20. Maximum Power Dissipation Derating Vs
Case Temperature
Case Temperature
10.00
Limited by R
DS On
1 µs
10 µs
100 µs
1.00
0.10
0.01
1 ms
100 ms
Conditions:
T
C
= 25 °C
D = 0,
Parameter:
t
p
0.1
1
10
100
1000
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
120
100
80
60
40
20
0
80
Conditions:
T
J
= 25 °C
V
DD
= 1200 V
Conditions:
T
J
= 25 °C
V
DD
= 900 V
E
Total
70
60
50
40
30
20
10
0
R
G(ext)
=
2.5 Ω
R
V
G(ext)
=
2.5 Ω
GS
= -5/+20 V
E
Total
V
GS
= -5/+20 V
FWD = GC2M1000170D
L =
1738 μH
FWD =
GC2M1000170D
L =
1738 μH
E
On
E
On
E
Off
E
Off
0
1
2
3
4
5
0
1
2
3
4
5
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 1200V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 900 V)
GC2M1000170D Rev.
B, 10-2019
6
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
120
120
100
80
60
40
20
0
Conditions:
Conditions:
I
DS
= 2 A
DD
= 1200 V
R
G(ext)
=
2.5 Ω
V
GS
= -5/+20 V
L =
1738 μH
T =
J
25 °C
V
DD
=
1200 V
2 A
E
Total
V
E
Total
E
On
I
DS
=
100
80
60
40
20
0
V
GS
=
-5/+20 V
E
On
FWD =
GC2M1000170D
L =
1738 μH
GC2M1000170D
FWD =
E
Off
E
Off
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
100
Conditions:
T =
J
25 °C
V
DD
=
1200 V
I
DS
V
GS
=
2 A
80
60
40
20
0
=
-5/+20 V
FWD =
GC2M1000170D
t
f
t
r
t
d(off)
t
d(on)
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
GC2M1000170D Rev.
B, 10-2019
7
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Test Circuit Schematic
Q
1
2.5
Ω
L=1478 uH
GC2M1000170D
V
GS
= – 5V
V
DC
C
DC
=42.3 uF
Q
2
R
G
GC2M1000170D
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
ESD Ratings
ESD Test
ESD-HBM
ESD-CDM
T
o
tal Devices Sampled
Resulting Classification
3A (>4000V)
All Devices Passed 4000V
All Devices Passed 1000V
IV (>1000V)
GC2M1000170D Rev.
B, 10-2019
8
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Package TO-247-3
1
2
3
GC2M1000170D Rev.
B, 10-2019
9
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC2M1000170D
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Package TO-247-3
A
4.83
2.29
1.91
1.07
1.91
5.21
2.54
2.16
1.33
2.41
3.38
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
.190
.205
.100
.085
.052
.095
.133
.027
.831
.695
.049
.635
.557
.201
.075
.529
A1
A2
b
b1
b3
c
.090
.075
.042
.075
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
.214 BSC
3
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
D
D1
D2
E
E1
E2
E3
E4
e
1.00
12.38
5.44 BSC
3
N
19.81
4.10
3.51
5.49
6.04
20.32
4.40
3.65
6.00
.780
.161
.138
.216
.238
.800
.173
.144
.236
.248
L
L1
∅
P
Q
6.30
S
17.5° REF.
3.5° REF.
4° REF.
T
W
X
Recommended Solder Pad Layout
TO-247-3
GC2M1000170D Rev.
B, 10-2019
10
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
