SUPSiC-GC3M0021120D
| Part # | SUPSiC-GC3M0021120D |
Download  | SUPSiC-GC3M0021120D |
GC3M0021120D
D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
N-Ch
l Enhancement Mode
Features
V
DS
1200 V
81 A
•
•
•
•
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
I
D
@
25˚C
R
DS(on)
21 m
Ω
Benefits
•
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
TO-247-3
•
•
•
•
•
Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch
Package
Part Number
Package
TO-247-3
GC3M0021120D
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
AC (f >1 Hz)
1200
-8/+19
-4/+15
81
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
Note 1
Note 2
Static
V
GS
= 15
V
,
T
C
= 25˚C
Fig. 19
Note 3
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
56
V
GS
= 15
V
,
T
C
= 100˚C
200
469
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 175 ˚C
Fig. 20
J
-40 to
+175
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M
d
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
Note (3):
Die limits are 100A (25°C) and 74A (100°C)
GC3M0021120D Rev.
2, 10-2021
1
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Note
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= 100 μA
2.5
2.0
1
3.6
V
DS
= V
GS
, I
D
= 17.7 mA
V
V
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 17.7 mA, T
J
= 175ºC
V
DS
= 1200
V
,
V
GS
= 0 V
V
GS
= 15
V
,
V
DS
= 0 V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
μA
nA
10
21
38
35
33
250
28.8
14.7
V
GS
= 15
V
,
I
D
= 50 A
V
GS
= 15
V
,
I
D
= 50 A, T
J
= 175ºC
DS
= 20
V
,
I
DS
= 50 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
g
fs
S
Fig. 7
V
DS
= 20
V
,
I
DS
= 50 A, T
J
= 175ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
4818
180
12
V
GS
= 0
V
,
V
DS
= 1000 V
Fig. 17,
18
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 100 KHz
AC
V
= 25 mV
99
μJ
Fig. 16
E
ON
Turn-On Switching Energy (SiC Diode FWD)
3.05
V
DS
= 800
V
,
V
GS
= -4 V/+15
V
,
I
D
= 50 A,
Fig. 26,
29
mJ
R
G(ext)
= 5Ω, L= 65.7 μH,
T
J
= 175ºC
E
OFF
E
ON
E
OFF
t
d(on)
t
r
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
1.67
4.65
1.58
142
27
V
DS
= 800
V
,
V
GS
= -4 V/+15
V
,
I
D
= 50 A,
Fig. 26,
29
mJ
ns
R
G(ext)
= 5Ω, L= 65.7 μH,
T
J
= 175ºC
V
DD
= 800
V
,
V
GS
= -4 V/15 V
Rise Time
Fig. 27
R
G(ext)
= 2.5 Ω,
L= 65.7 μH
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
72
25
Timing relative to VDS, Inductive load
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
3.3
51
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 50 A
54
nC
Fig. 12
Per IEC60747-8-4 pg 21
160
(T
C
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.6
V
V
GS
= -4
V
,
I
SD
= 25 A, T
= 25 °C
J
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.2
V
A
V
GS
= -4
V
,
I
SD
= 25 A, T
= 175 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
90
V
GS
= -4
V
,
T
C
= 25˚C
Note 1
Note 1
200
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recover time
81
879
19
ns
nC
A
V
GS
= -4
V
,
I
SD
= 50 A, V
R
= 800 V
Note 1
Q
rr
Reverse Recovery Charge
Peak Reverse Recovery Current
dif/dt = 1000 A/µs, T
= 175 °C
J
I
rrm
Thermal Characteristics
Typ.
0.32
40
Test Conditions
Note
Symbol
R
θ
JC
Parameter
Unit
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
GC3M0021120D Rev.
2, 10-2021
2
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
200
160
120
80
200
160
120
80
Conditions:
T
J
= -40 °C
tp = < 200 µs
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 15V
V
GS
= 13V
V
GS
= 13V
V
GS
= 11V
V
GS
= 11V
V
GS
= 9V
V
GS
= 9V
40
40
V
GS
= 7V
V
GS
= 7V
0
0
0.0
0.0
0
2.0
4.0
6.0
8.0
10.0
10.0
200
0.0
2.0
4.0
6.0
8.0
10.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -40 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
160
120
80
Conditions:
T
J
= 175 °C
tp = < 200 µs
Conditions:
I
DS
= 50 A
V
V
GS
= 15V
GS
= 15 V
p
< 200 µs
t
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
40
0
-50
-25
0
25
50
75
100
125
150
175
2.0
4.0
6.0
8.0
Junction Temperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 175 ºC
Figure 4. Normalized On-Resistance vs. Temperature
50
45
40
35
30
25
20
15
10
5
Conditions:
I
DS
= 50 A
60
50
40
30
20
10
0
Conditions:
t
p
< 200 µs
V
GS
= 15 V
t
p
< 200 µs
T
J
= 175 °C
V
GS
= 11 V
V
GS
= 13 V
T
J
= 25 °C
T
J
= -40 °C
V
GS
= 15 V
0
-50
-25
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Drain-Source Current, I
DS
(A)
Junction Temperature, T
J
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC3M0021120D Rev.
2, 10-2021
3
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
200
180
160
140
120
100
80
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
-25
V
GS
= -4 V
T
J
= 175 °C
V
GS
= 0 V
-50
V
GS
= -2 V
-75
T
J
= 25 °C
T
J
= -40 °C
-100
-125
-150
-175
-200
60
40
20
Conditions:
T
J
= -40°C
p
< 200 µs
0
t
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-25
-25
V
GS
= -4 V
V
GS
= -4 V
-50
-50
V
GS
= 0 V
V
GS
= 0 V
-75
-75
V
GS
= -2 V
V
GS
= -2 V
-100
-125
-150
-175
-200
-100
-125
-150
-175
-200
Conditions:
T
J
= 25°C
Conditions:
T
J
= 175°C
t
p
< 200 µs
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditions:
I
DS
= 50 A
Conditons
V
GS
= V
DS
I
DS
= 17.7 mA
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
160
180
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
GC3M0021120D Rev.
2, 10-2021
4
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= 0 V
-40
-80
-120
-160
-200
-40
-80
-120
-160
-200
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
J
= 25 °C
Conditions:
T
J
= -40 °C
p
< 200 µs
t
p
< 200 µs
t
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
140
-8
-7
-6
-5
-4
-3
-2
-1
0
0
120
100
80
60
40
20
0
V
GS
= 0 V
-40
-80
-120
-160
-200
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
Conditions:
T
J
= 175 °C
p
< 200 µs
t
0
200
400
600
800
1000
1200
Drain to Source Voltage, V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC
Figure 16. Output Capacitor Stored Energy
10000
10000
1000
100
10
C
iss
C
iss
1000
100
10
C
oss
C
oss
C
rss
C
rss
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
V
AC
= 25 mV
f = 100 kHz
1
1
0
50
100
150
200
0
200
400
600
800
1000
1200
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1000V)
GC3M0021120D Rev.
2, 10-2021
5
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
120
100
80
60
40
20
0
500
450
400
350
300
250
200
150
100
50
Conditions:
T
J
≤ 175
°C
Conditions:
T
J
≤ 175
°C
0
-40
-15
10
35
60
85
110
135
160
-55
-30
-5
20
45
70
95
120
145
170
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
10 µs
Limited by R
DS On
100 µs
10.00
0.5
0.3
100E-3
10E-3
1E-3
0.1
1.00
0.10
0.01
0.05
0.02
0.01
Conditions:
T
C
= 25 °C
D = 0,
SinglePulse
Parameter:
t
p
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
12
10
8
10
8
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 5
Ω
V
GS
= -4V/+15V
FWD = GC3M0021120D
E
Total
V
DD
= 600 V
E
Total
R
G(ext)
= 5
Ω
V
GS
= -4V/+15V
FWD = GC3M0021120D
L = 65.7
μ
H
L = 65.7
μ
H
E
On
6
E
On
6
4
4
E
Off
E
Off
2
2
0
0
0
0
20
40
60
80
100
10
20
30
40
50
60
70
80
90
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 800V)
GC3M0021120D Rev.
2, 10-2021
6
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
10
10
8
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 50 A
V
GS
= -4V/+15 V
FWD GC3M0021120D
L = 65.7
μ
H
Conditions:
I
DS
= 50 A
V
DD
= 800 V
R
G(ext)
= 5
Ω
V
GS
= -4V/+15 V
L = 65.7
μ
H
FWD = GC3M0021120D
FWD = GC4D20120A
8
E
Total
E
Total
6
6
E
Total
with diode
E
On
E
On
4
4
E
On
with diode
E
Off
with diode
E
Off
2
2
E
Off
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
200
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
300
Conditions:
T
J
= 25 °C
V
DD
= 800 V
250
200
150
100
50
I
DS
= 50 A
GS
= -4V/+15 V
FWD = GC3M0021120D
V
t
d(on)
t
d(off)
t
r
t
f
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
GC3M0021120D Rev.
2, 10-2021
7
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Test Circuit Schematic
R
G
Q
1
GC3M0021120D
L
V
GS
= – 4 V
KS
V
DC
C
DC
Q
2
GC3M0021120D
R
G
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (4): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
GC3M0021120D Rev.
2, 10-2021
8
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0021120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ
Pin 1 = Gate
•ꢀ
Pin 2, 4 = Drain
•ꢀ
Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
GC3M0021120D Rev.
2, 10-2021
9
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
