SUPSiC-GC3M0032120D
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GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
N Ch
l E
hancement Mode
Features
V
DS
I
D
R
DS(on)
1200 V
63 A
•
•
•
•
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
@
25˚C
32 m
Ω
Benefits
•
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
TO-247-3
•
•
•
•
Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Package
Part Number
Package
TO-247-3
GC3M0032120D
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
V
GS
= 0
V
,
I
D
= 100 μA
Note
1200
-8/+19
-4/+15
63
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
AC (f >1 Hz)
Note 1
Note 2
Static
V
GS
= 15
V
,
T
C
= 25˚C
V
GS
= 15
V
,
T
C
= 100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
Fig. 19
I
D
48
120
283
Pulse width t
P
limited by T
jmax
I
D(pulse)
P
D
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 175 ˚C
Fig. 20
J
-40 to
+175
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M
d
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
GC3M0032120D Rev.
2, 10-2019
1
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
V
GS
= 0
V
,
I
D
= 100 μA
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
2.5
2.0
1
3.6
V
DS
= V
GS
, I
D
= 11.5 mA
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
V
DS
= V
GS
, I
D
= 11.5 mA, T
J
= 175ºC
V
DS
= 1200
V
,
V
GS
= 0 V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
250
43
μA
nA
10
V
GS
= 15
V
,
V
DS
= 0 V
23
32
V
GS
= 15
V
,
I
D
= 40 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
57.6
27
V
GS
= 15
V
,
I
D
= 40 A, T
J
= 175ºC
V
DS
= 20
V
,
I
DS
= 40 A
g
fs
S
Fig. 7
22
V
DS
= 20
V
,
I
DS
= 40 A, T
J
= 175ºC
C
iss
Input Capacitance
Output Capacitance
3357
129
V
GS
= 0
V
,
V
DS
= 1000 V
Fig. 17,
18
C
oss
pF
f = 100 kHz
C
rss
E
oss
E
ON
Reverse Transfer Capacitance
C
oss
Stored Energy
8
AC
V
= 25 mV
76
μJ
Fig. 16
Fig. 26
Turn-On Switching Energy (SiC Diode FWD)
1.94
V
DS
= 800
V
,
V
GS
= -4 V/+15
V
,
I
D
= 40 A,
R
G(ext)
= 5Ω, L= 157 μH, Tj = 175
ºC
mJ
E
OFF
E
ON
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
0.79
3.10
0.72
V
DS
= 800
V
,
V
GS
= -4 V/+15
V
,
I
D
= 40 A,
G(ext)
= 5Ω, L= 157 μH, Tj = 175
ºC
mJ
ns
Fig. 26
Fig. 27
R
E
OFF
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
107
22
V
DD
= 800
V
,
V
GS
= -4 V/15 V
G(ext)
= 5 Ω,
I
D
= 40 A,
L= 157
Timing relative to V
DS
, Inductive
load
R
Turn-Off Delay Time
Fall Time
39
19
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
1.7
35
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 40 A
Per IEC60747-8-4 pg 21
40
nC
Fig. 12
114
GC3M0032120D Rev.
2, 10-2019
2
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
(T
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
4.6
Max.
Unit
Test Conditions
Note
V
V
GS
= -4
V
,
I
SD
= 20 A, T
= 25 °C
J
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.2
V
A
V
GS
= -4
V
,
I
SD
= 20 A, T
= 175 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
62
Note 1
Note 1
V
GS
= -4
V
,
T
C
= 25˚C
120
A
V
GS
= -4
V
,
p
ulse width t
P
limited by T
jmax
Reverse Recover time
69
848
19
ns
nC
A
V
GS
= -4
V
,
I
SD
= 40 A, V
R
= 800 V
Q
rr
Reverse Recovery Charge
Peak Reverse Recovery Current
Note 1
dif/dt = 1500 A/µs, T
= 175 °C
J
I
rrm
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Typ.
0.45
40
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
GC3M0032120D Rev.
2, 10-2019
3
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
120
100
80
60
40
20
0
120
100
80
60
40
20
0
V
GS
= 15V
V
GS
= 13V
V
GS
= 15V
Conditions:
T
J
= -40 °C
tp = < 200 µs
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 13V
V
GS
= 11V
V
GS
= 11V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -40 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
60
40
20
0
Conditions:
T
J
= 175 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
Conditions:
I
DS
= 40 A
V
GS
= 15 V
t
p
< 200 µs
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
-40
-20
0
20
40
60
80
100
120
140
160
180
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Junction Temperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 175 ºC
Figure 4. Normalized On-Resistance vs. Temperature
80
70
60
50
40
30
20
10
0
90
Conditions:
Conditions:
V
GS
= 15 V
I
DS
= 40 A
80
70
60
50
40
30
20
10
0
t
p
< 200 µs
t
p
< 200 µs
T
J
= 175 °C
V
GS
= 11 V
T
J
= -40 °C
T
J
= 25 °C
V
GS
= 13 V
V
GS
= 15 V
-40
-5
30
65
100
135
170
0
20
40
60
80
100
120
140
160
Junction Temperature, T
J
(°C)
Drain-Source Current, I
DS
(A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC3M0032120D Rev.
2, 10-2019
4
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
160
140
120
100
80
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
V
GS
= -4 V
T
J
= 175 °C
T
J
= 25 °C
-20
-40
-60
-80
-100
-120
V
GS
= 0 V
V
GS
= -2 V
T
J
= -40 °C
60
40
20
Conditions:
T
J
= -40°C
t
p
< 200 µs
0
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= -4 V
V
GS
= -4 V
-20
-40
-60
-80
-100
-120
-20
-40
-60
-80
-100
-120
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -2 V
Conditions:
T
J
= 25°C
Conditions:
T
J
= 175°C
t
p
< 200 µs
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditions:
DS
= 40 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
Conditons
V
GS
= V
DS
I
DS
= 11.5 mA
I
12
8
4
0
-4
-40
-5
30
65
100
135
170
0
20
40
60
80
100
120
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
GC3M0032120D Rev.
2, 10-2019
5
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-20
-40
-60
-80
-100
-120
-20
-40
-60
-80
-100
-120
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
J
= -40 °C
t
p
< 200 µs
Conditions:
T
J
= 25 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
120
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
V
GS
= 0 V
100
80
60
40
20
0
-20
-40
-60
-80
-100
-120
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
Conditions:
T
J
= 175 °C
p
< 200 µs
t
0
200
400
600
800
1000
1200
Drain to Source Voltage, V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC
Figure 16. Output Capacitor Stored Energy
10000
10000
1000
100
10
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
iss
C
iss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
1000
100
10
C
oss
C
oss
C
rss
C
rss
1
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
1200
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1200V)
GC3M0032120D Rev.
2, 10-2019
6
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
Conditions:
T
J
≤ 175
°C
Conditions:
T
J
≤ 175
°C
0
-55
-30
-5
20
45
70
95
120
145
170
-55
-30
-5
20
45
70
95
120
145
170
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
Limited by R
DS On
10 µs
100 µs
0.5
0.3
10.00
1.00
0.10
0.01
1 ms
100 ms
100E-3
10E-3
1E-3
0.1
0.05
0.02
0.01
Conditions:
C
= 25 °C
D = 0,
SinglePulse
T
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
5
4
3
2
1
0
5
4
3
2
1
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 5
Ω
V
GS
= -4V/+15V
FWD = GC3M0032120D
L = 65.7
μ
H
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 5
Ω
V
GS
= -4V/+15V
FWD = GC3M0032120D
E
Total
E
Total
L = 157
μ
H
E
On
E
On
E
Off
E
Off
0
0
0
10
20
30
40
50
60
10
20
30
40
50
60
70
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 800V)
GC3M0032120D Rev.
2, 10-2019
7
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 40 A
V
GS
= -4V/+15 V
FWD GC3M0032120D
L = 157
μ
H
Conditions:
I
DS
= 40 A
V
DD
= 800 V
R
G(ext)
= 5
Ω
V
GS
= -4V/+15 V
L = 157
μ
H
FWD = GC3M0032120D
FWD = GC4D20120A
E
Total
E
Total
E
On
E
On
E
Total
with diode
E
On
with diode
E
Off
with diode
E
Off
E
Off
0
5
10
15
20
25
0
25
50
75
100
125
150
175
200
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
200
150
100
50
Conditions:
T
J
= 25 °C
V
DD
= 800 V
t
d(on)
I
DS
= 40 A
GS
= -4V/+15 V
FWD = GC3M0032120D
V
t
d(off)
t
r
t
f
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
GC3M0032120D Rev.
2, 10-2019
8
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Test Circuit Schematic
R
G
Q
1
L
GC3M0032120D
V
GS
= – 4 V
KS
V
DC
C
DC
Q
2
R
G
D.U.T
GC3M0032120D
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
GC3M0032120D Rev.
2, 10-2019
9
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0032120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ
Pin 1 = Gate
•ꢀ
Pin 2, 4 = Drain
•ꢀ
Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
GC3M0032120D Rev.
2, 10-2019
10
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