SUPSiC-GC3M0065090D
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GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Features
•
•
•
•
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
V
DS
I
D
R
DS(on)
900 V
36 A
@
25˚C
65 m
Ω
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
TO-247-3
Package
Part Number
Package
TO-247-3
GC3M0065090D
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
900
-8/+19
-4/+15
36
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
AC (f >1 Hz)
Static
Note: 1
Note: 2
Fig. 19
V
GS
= 15
V
,
T
C
= 25˚C
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
23
V
GS
= 15
V
,
T
C
= 100˚C
90
Fig. 22
Fig. 20
I
D(pulse)
Pulse width t
P
limited by T
jmax
I
D
= 22A,
V
DD
= 50V
Avalanche energy, Single pulse
Power Dissipation
110
125
mJ
W
E
AS
P
D
T
C
=25˚C, T
= 150 ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
˚C
˚C
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M
d
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
GC3M0065090D Rev.
D, 06-2019
1
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
900
1.8
Typ.
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
GS
= 0
V
,
I
D
= 100 μA
2.1
1.6
1
3.5
V
DS
= V
GS
, I
D
= 5 mA
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 150ºC
V
DS
= 900
V
,
V
GS
= 0 V
V
GS
= 15
V
,
V
DS
= 0 V
V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
78
μA
nA
10
65
90
16
13
V
GS
= 15
V
,
I
D
= 20 A
V
GS
= 15
V
,
I
D
= 20A, T
J
= 150ºC
DS
= 20
V
,
I
DS
= 20 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
g
fs
S
Fig. 7
V
DS
= 20
V
,
I
DS
= 20 A, T
J
= 150ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
760
66
Fig. 17,
18
V
GS
= 0
V
,
V
DS
= 600 V
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 1 MHz
5.0
16
AC
V
= 25 mV
μJ
μJ
Fig. 16
E
ON
Turn-On Switching Energy (Body Diode FWD)
343
V
DS
= 400
V
,
V
GS
= -4 V/15
V
,
I
D
= 20 A,
Fig. 26,
Note 3
R
G(ext)
= 2.5 Ω, L= 65.7 μH,
T
J
= 150ºC
E
OFF
t
d(on)
t
r
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
46
45
13
V
DD
= 400
V
,
V
GS
= -4 V/15 V
I
D
= 20 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
Rise Time
ns
Fig. 27
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
20
8
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
3.5
9
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 400
V
,
V
GS
= -4 V/15 V
13
35
I
D
= 20 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.4
V
V
V
GS
= -4
V
,
I
SD
= 10 A
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.0
V
GS
= -4
V
,
I
SD
= 10 A, T
= 150 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
23.5
90
A
V
GS
= -4 V
Note 1
Note 1
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recovery time
26
ns
V
GS
= -4
V
,
I
SD
= 20 A, V
R
= 400 V
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
145
8
nC
A
dif/dt = 900 A/µs, T
= 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Max.
1.0
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
GC3M0065090D Rev.
D, 06-2019
2
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
Conditions:
T
J
= -55 °C
tp = < 200 µs
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
80
70
60
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Conditions:
T
J
= 150 °C
tp = < 200 µs
Conditions:
DS
= 20 A
V
GS
= 15 V
p
< 200 µs
V
GS
= 15V
I
V
GS
= 13V
t
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
140
120
100
80
120
100
80
60
40
20
0
Conditions:
I
DS
= 20 A
Conditions:
V
GS
= 15 V
t
p
< 200 µs
t
p
< 200 µs
T
J
= 150 °C
V
GS
= 11 V
T
J
= -55 °C
T
J
= 25 °C
V
GS
= 13 V
V
GS
= 15 V
60
40
20
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Junction Temperature, T
J
(°C)
Drain-Source Current, I
DS
(A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC3M0065090D Rev.
D, 06-2019
3
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
N-Channel Enhancement Mode
Typical Performance
50
40
30
20
10
0
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
-10
-20
-30
-40
-50
-60
-70
-80
T
J
= 150 °C
V
GS
= -4 V
V
GS
= 0 V
T
J
= 25 °C
V
GS
= -2 V
T
J
= -55 °C
Conditions:
T
J
= -55°C
t
p
< 200 µs
0
2
4
6
8
10
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= -4 V
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= -4 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -2 V
Conditions:
T
J
= 25°C
Conditions:
T
J
= 150°C
t
p
< 200 µs
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
V
GS
= V
DS
I
DS
= 5 mA
Conditions:
DS
= 20 A
I
GS
= 50 mA
V
DS
= 400 V
T
J
= 25 °C
I
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
GC3M0065090D Rev.
D, 06-2019
4
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
J
= -55 °C
t
p
< 200 µs
Conditions:
T
J
= 25 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
35
30
25
20
15
10
5
0
V
GS
= 0 V
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= 5 V
V
GS
= 10 V
GS
= 15 V
V
Conditions:
T
J
= 150 °C
t
p
< 200 µs
0
0
100
200
300
400
500
600
700
800
900
1000
Drain-Source Voltage V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
10000
10000
1000
100
10
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
iss
C
iss
1000
100
10
C
oss
C
oss
C
rss
C
rss
1
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
100
200
300
400
500
600
700
800
900
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 900V)
GC3M0065090D Rev.
D, 06-2019
5
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
40
35
30
25
20
15
10
5
140
120
100
80
Conditions:
T
J
≤ 150
°C
Conditions:
T
J
≤ 150
°C
60
40
20
0
0
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
10 µs
1
Limited by R
DS On
100 µs
0.5
0.3
10.00
1 ms
100 ms
1.00
0.10
0.01
0.1
100E-3
0.05
0.02
Conditions:
T
C
= 25 °C
D = 0,
SinglePulse
0.01
Parameter:
t
p
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
Drain-Source Voltage, V
DS
(V)
Time, t
p
(s)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
1200
1800
1600
1400
1200
1000
800
Conditions:
T
J
= 25 °C
V
DD
= 400 V
R
G(ext)
= 2.5
Ω
Conditions:
T
J
= 25 °C
V
DD
= 600 V
E
Total
1000
800
600
400
200
0
R
G(ext)
= 2.5
Ω
E
Total
V
GS
= -4V/+15V
V
GS
= -4V/+15V
FWD = C3M0065090D
L = 65.7
μ
H
E
On
FWD = C3M0065090D
L = 65.7
μ
H
E
On
600
E
Off
E
Off
400
200
0
0
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 400V)
GC3M0065090D Rev.
D, 06-2019
6
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
600
500
400
300
200
100
0
600
500
400
300
200
100
0
Conditions:
T
J
= 25 °C
V
DD
= 400 V
I
DS
= 20 A
V
GS
= -4V/+15 V
FWD = C3M0065090D
L = 65.7
μ
H
Conditions:
I
DS
= 20 A
V
DD
= 400 V
E
Total
R
G(ext)
= 2.5
Ω
V
GS
= -4V/+15 V
FWD = C3M0065090D
L = 65.7
μ
H
E
Total
E
On
E
On
E
Off
E
Off
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
100
Conditions:
T
J
= 25 °C
V
DD
= 400 V
I
DS
= 20 A
80
60
40
20
0
V
GS
= -4V/+15 V
FWD = C3M0065090D
L = 65.7
μ
H
t
d(on)
t
d(off)
t
r
t
f
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 28. Switching Times Definition
Figure 27. Switching Times vs. R
G(ext)
35
30
25
20
15
10
5
Conditons:
V
DD
= 50 V
0
0
20
40
60
80
100
Time in Avalanche T
AV
(us)
Figure 29. Single Avalanche SOA curve
GC3M0065090D Rev.
D, 06-2019
7
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Test Circuit Schematic
Q
1
GC3M0065090D
R
G
V
GS
= – 4V
V
DC
Q
2
R
G
D.U.T
GC3M0065090D
Figure 30. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
GC3M0065090D Rev.
D, 06-2019
8
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0065090D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ
Pin 1 = Gate
•ꢀ
Pin 2, 4 = Drain
•ꢀ
Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
GC3M0065090D Rev.
D, 06-2019
9
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