SUPSiC-GC3M0075120K
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GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Features
V
DS
I
D
R
DS(on)
1200 V
32 A
@
25˚C
•
•
•
•
•
Optimized package with separate driver source pin
75 m
Ω
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
Benefits
•
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
TO-247-4
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Package
Drain
(Pin 1, TAB)
Ordering Part
T ,
T
stg
Range
Package
TO-247-4
J
Number
Gate
(Pin 4)
-55 – 150
˚C
GC3M0075120K
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
1200
-8/+19
-4/+15
32
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
AC (f >1 Hz)
Static
Note: 1
Note: 2
Fig. 19
V
GS
= 15
V
,
T
C
= 25˚C
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
23
V
GS
= 15
V
,
T
C
= 100˚C
80
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
136
W
˚C
˚C
T
C
=25˚C, T
= 175 ˚C
J
-40 to
+175
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
T
L
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
GC3M0075120K Rev.
5, 01-2021
1
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
GS
= 0
V
,
I
D
= 100 μA
2.5
2.2
1
3.6
V
DS
= V
GS
, I
D
= 5 mA
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 175ºC
V
DS
= 1200
V
,
V
GS
= 0 V
V
GS
= 15
V
,
V
DS
= 0 V
V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
250
90
μA
nA
10
75
120
12
13
V
GS
= 15
V
,
I
D
= 20 A
V
GS
= 15
V
,
I
D
= 20A, T
J
= 175ºC
DS
= 20
V
,
I
DS
= 20 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
g
fs
S
Fig. 7
V
DS
= 20
V
,
I
DS
= 20 A, T
J
= 175ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
1390
58
Fig. 17,
18
V
GS
= 0
V
,
V
DS
= 1000 V
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 1 MHz
2
AC
V
= 25 mV
33
μJ
μJ
Fig. 16
E
ON
Turn-On Switching Energy (Body Diode FWD)
270
V
DS
= 800
V
,
V
GS
= -4 V/15
V
,
I
D
= 20A,
Fig. 26,
29
R
G(ext)
= 0 Ω, L= 156 μH,
T
J
= 150ºC
E
OFF
t
d(on)
t
r
Turn-Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
77
30
14
V
DD
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 20 A, R
G(ext)
= 0 Ω,
Timing relative to V
DS
Inductive load
Rise Time
Fig. 27,
28
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
38
10
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
9.0
17
18
53
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 20 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T
= 25˚C unles1s otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.5
V
V
V
GS
= -4
V
,
I
SD
= 10 A
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.0
V
GS
= -4
V
,
I
SD
= 10 A, T
= 175 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
26
A
Note 1
Note 1
V
GS
= -4
V
,
T
= 25 ˚C
J
80
20
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recover time
ns
V
GS
= -4
V
,
I
SD
= 20 A, V
R
= 800 V
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
254
18
nC
A
dif/dt = 3600 A/µs, T
= 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Max.
1.1
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
40
GC3M0075120K Rev.
5, 01-2021
2
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
Conditions:
T
J
= -40 °C
tp = < 200 µs
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 15V
V
GS
= 13V
V
GS
= 13V
V
V
GS
= 11V
V
GS
= 11V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
0.0
2.0
4.0
6.0
8.0
10.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -40 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
80
70
60
50
40
30
20
10
0
2.0
Conditions:
T
J
= 175 °C
tp = < 200 µs
Conditions:
I
DS
= 20 A
GS
= 15 V
t
p
< 200 µs
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
-50
-25
0
25
50
75
100
125
150
175
0.0
2.0
4.0
6.0
8.0
10.0
Junction Temperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 175 ºC
Figure 4. Normalized On-Resistance vs. Temperature
180
160
140
120
100
80
200
180
160
140
120
100
80
Conditions:
V
GS
= 15 V
Conditions:
I
DS
= 20 A
t
p
< 200 µs
t
p
< 200 µs
T
J
= 175 °C
V
GS
= 11 V
V
GS
= 13 V
T
J
= -40 °C
T
J
= 25 °C
V
GS
= 15 V
60
60
40
40
20
20
0
0
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
175
Drain-Source Current, I
DS
(A)
Junction Temperature, T
J
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC3M0075120K Rev.
5, 01-2021
3
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
80
70
60
50
40
30
20
10
0
-10
-8
-6
-4
-2
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= -4 V
T
J
= 175 °C
V
GS
= 0 V
T
J
= 25 °C
V
GS
= -2 V
T
J
= -40 °C
Conditions:
T
J
= -40°C
t
p
< 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-10
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= -4 V
V
GS
= -4 V
V
GS
= 0 V
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -2 V
Conditions:
T
J
= 175°C
Conditions:
T
J
= 25°C
t
p
< 200 µs
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
V
GS
= V
DS
I
DS
= 5 mA
Conditions:
I
DS
= 20 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
GC3M0075120K Rev.
5, 01-2021
4
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
J
= -40 °C
p
< 200 µs
Conditions:
T
J
= 25 °C
t
p
< 200 µs
t
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
40
-10
-8
-6
-4
-2
0
0
35
30
25
20
15
10
5
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
GS
= 15 V
V
Conditions:
T
J
= 175 °C
t
p
< 200 µs
0
0
200
400
600
800
1000
Drain to Source Voltage, V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC
Figure 16. Output Capacitor Stored Energy
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
V
AC
= 25 mV
f = 1 MHz
10000
10000
1000
100
10
C
iss
C
iss
1000
100
10
C
oss
C
oss
C
rss
C
rss
1
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1000V)
GC3M0075120K Rev.
5, 01-2021
5
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
35
30
25
20
15
10
5
140
120
100
80
Conditions:
T
J
≤ 175
°C
Conditions:
T
J
≤ 175
°C
60
40
20
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
0.5
Limited by R
DS On
1 µs
10.00
0.3
0.1
10 µs
100E-3
10E-3
1E-3
100 µs
0.05
1.00
0.10
0.01
0.02
1 ms
0.01
100 ms
SinglePulse
Conditions:
C
= 25 °C
D = 0,
T
Parameter:
t
p
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
10
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
800
600
500
400
300
200
100
0
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
E
Total
E
Total
V
DD
= 800 V
R
G(ext)
= 0
Ω
V
GS
= -4V/+15 V
FWD = GC3M0075120K
L = 156
μ
H
V
DD
= 600 V
R
G(ext)
= 0
Ω
V
GS
= -4V/+15 V
FWD = GC3M0075120K
L = 156
μ
H
600
400
200
0
E
On
E
On
E
Off
E
Off
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 800V)
GC3M0075120K Rev.
5, 01-2021
6
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
1000
800
600
400
200
0
600
500
400
300
200
100
0
Conditions:
I
DS
= 20 A
V
DD
= 800 V
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 20 A
V
GS
= -4V/+15 V
FWD = GC3M0075120K
L = 156
μ
H
E
Total
R
G(ext)
= 0
Ω
V
GS
= -4V/+15 V
FWD = GC3M0075120K
L = 156
μ
H
E
Total
E
On
E
On
E
Off
E
Off
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
80
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 20 A
V
GS
= -4V/+15 V
FWD = GC3M0075120K
L = 156
μ
H
60
40
20
0
t
d(off)
t
d(on)
t
r
t
f
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
GC3M0075120K Rev.
5, 01-2021
7
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Test Circuit Schematic
R
G
Q
1
L
V
GS
= – 4 V
KS
V
DC
C
DC
Q
2
R
G
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
GC3M0075120K Rev.
5, 01-2021
8
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Package Dimensions
Package TO-247-4L
GC3M0075120K Rev.
5, 01-2021
9
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0075120K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Package Dimensions
Package TO-247-4L
GC3M0075120K Rev.
5, 01-2021
10
Copyright
2021 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
