SUPSiC-GC3M0120100K
| Part # | SUPSiC-GC3M0120100K |
Download  | SUPSiC-GC3M0120100K |
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
V
DS
I
D
R
DS(on)
1000 V
22 A
Features
@
25˚C
•
Optimized package with separate driver source pin
120 m
Ω
•
•
•
•
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
Benefits
•
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
TO-247-4
Applications
Package
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Drain
(Pin 1, TAB)
Part Number
Package
Gate
(Pin 4)
GC3M0120100K
TO-247-4
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
AC (f >1 Hz)
Static
1000
-8/+19
-4/+15
22
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
Note: 1
Note: 2
Fig. 19
V
GS
= 15
V
,
T
C
= 25˚C
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
14
V
GS
= 15
V
,
T
C
= 100˚C
50
83
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 150 ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
T
L
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
GC3M0120100K Rev.
3, 10-2020
1
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Typ.
Symbol
Parameter
Min.
1000
1.8
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
GS
= 0
V
,
I
D
= 100 μA
2.1
1.6
1
3.5
V
DS
= V
GS
, I
D
= 3 mA
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 3 mA, T
J
= 150ºC
V
DS
= 1000
V
,
V
GS
= 0 V
V
GS
= 15
V
,
V
DS
= 0 V
V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
155
μA
nA
10
120
170
8.9
7.1
V
GS
= 15
V
,
I
D
= 15 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
GS
= 15
V
,
I
D
= 15 A, T
J
= 150ºC
DS
= 20
V
,
I
DS
= 15 A
V
g
fs
S
Fig. 7
V
DS
= 20
V
,
I
DS
= 15 A, T
J
= 150ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
414
48
Fig. 17,
18
V
GS
= 0
V
,
V
DS
= 600 V
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 1 MHz
3
AC
V
= 25 mV
10.6
μJ
μJ
Fig. 16
Fig. 26
E
ON
Turn-On Switching Energy (Body Diode FWD)
120
V
DS
= 700
V
,
V
GS
= -4 V/15
V
,
I
D
= 15A,
R
G(ext)
= 2.5Ω, L= 158μH,
T
J
= 150ºC
E
OFF
t
d(on)
t
r
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
22
5
V
DD
= 700
V
,
V
GS
= -4 V/15 V
I
D
= 15 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
Rise Time
9
Fig. 27,
28
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
13
7
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
13
5
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 700
V
,
V
GS
= -4 V/15 V
I
D
= 15 A
9
nC
Fig. 12
Per IEC60747-8-4 pg 21
22
(T
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.8
V
V
V
GS
= -4
V
,
I
SD
= 7.5 A
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.4
V
GS
= -4
V
,
I
SD
= 7.5 A, T
= 150 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
15
50
A
V
GS
= -4 V
Note 1
Note 1
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recover time
17
ns
V
GS
= -4
V
,
I
SD
= 15 A, V
R
= 700 V
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
191
18
nC
A
dif/dt = 2400 A/µs, T
= 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Max.
1.5
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
40
GC3M0120100K Rev.
3, 10-2020
2
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
V
GS
= 15V
V
GS
= 13V
V
GS
= 13V
V
GS
= 15V
Conditions:
T
j
= 25 °C
tp = < 200 µs
Conditions:
T
j
= -55 °C
tp = < 200 µs
V
GS
= 11V
V
GS
= 11V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
V
GS
= 7V
0
0
0.0
0.0
0
2.0
4.0
6.0
8.0
10.0
12.0
12.0
50
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
45
40
35
30
25
20
15
10
5
2.5
2.0
1.5
1.0
0.5
0.0
Conditions:
T
j
= 150 °C
tp = < 200 µs
Conditions:
I
DS
= 15 A
GS
= 15 V
p
< 200 µs
V
GS
= 15V
V
GS
= 11V
V
t
V
GS
= 13V
V
GS
= 9V
V
GS
= 7V
0
2.0
4.0
6.0
8.0
10.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
j
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
300
275
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
Conditions:
I
DS
= 15 A
p
< 200 µs
Conditions:
GS
= 15 V
p
< 200 µs
V
t
t
V
GS
= 11 V
T
j
= 150 °C
T
j
= -55 °C
V
GS
= 13 V
T
j
= 25 °C
V
GS
= 15 V
50
50
25
25
0
0
-50
-25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
Junction Temperature, T
j
(°C)
Drain-Source Current, I
DS
(A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC3M0120100K Rev.
3, 10-2020
3
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
-8
-7
-6
-5
GS
= -4 V
-4
-3
-2
-1
0
35
30
25
20
15
10
5
Conditions:
V
DS
= 20 V
tp < 200 µs
0
V
-5
V
GS
= 0 V
-10
-15
-20
-25
-30
-35
-40
-45
T
J
= 150 °C
T
J
= 25 °C
V
GS
= -2 V
T
J
= -55 °C
Conditions:
T
j
= -55°C
t
p
< 200 µs
0
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= -4 V
-5
-5
V
GS
= -4 V
V
GS
= 0 V
V
GS
= 0 V
-10
-15
-20
-25
-30
-35
-40
-45
-10
-15
-20
-25
-30
-35
-40
-45
V
GS
= -2 V
V
GS
= -2 V
Conditions:
T
j
= 150°C
Conditions:
T
j
= 25°C
t
p
< 200 µs
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditions:
I
DS
= 15 A
Conditons
V
GS
= V
DS
I
DS
= 3 mA
I
GS
= 18 mA
V
DS
= 700 V
T
J
= 25 °C
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
4
8
12
16
20
24
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
GC3M0120100K Rev.
3, 10-2020
4
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= 0 V
V
GS
= 0 V
-5
V
GS
= 5 V
V
GS
= 5 V
-10
-15
-20
-25
-30
-35
-40
-10
-20
-30
-40
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
j
= -55 °C
Conditions:
T
j
= 25 °C
t
p
< 200 µs
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
-6
-5
-4
-3
-2
-1
0
30
25
20
15
10
5
0
V
GS
= 0 V
-10
V
GS
= 5 V
V
GS
= 10 V
GS
= 15 V
V
-20
-30
-40
Conditions:
T
j
= 150 °C
t
p
< 200 µs
0
0
200
400
600
800
1000
1200
Drain-Source Voltage V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
1000
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
C
iss
V
AC
= 25 mV
f = 1 MHz
V
AC
= 25 mV
f = 1 MHz
1000
100
10
C
iss
C
oss
100
10
1
C
oss
C
rss
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1000V)
GC3M0120100K Rev.
3, 10-2020
5
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
Conditions:
T
J
≤ 150
°C
Conditions:
T
J
≤ 150
°C
0
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case
T
e
mperature, T
C
(°C)
Case
T
e
mperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
0.5
0.3
Limited by R
DS On
10 µs
10.00
100 µs
1 ms
100 ms
0.1
1.00
0.10
0.01
0.05
100E-3
0.02
SinglePulse
0.01
Conditions:
C
= 25 °C
T
D = 0,
Parameter:
t
p
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
120
100
80
60
40
20
0
250
Conditions:
T
J
= 25 °C
V
DD
= 500 V
R
G(ext)
=
2.5 Ω
Conditions:
T
J
= 25 °C
E
Total
V
R
DD
= 700 V
G(ext)
=
2.5 Ω
E
Total
200
150
100
50
V
GS
= -4/+15 V
V
GS
= -4/+15 V
FWD = GC3M0120100K
L =
158 μH
FWD =
GC3M0120100K
L =
158 μH
E
On
E
On
E
Off
E
Off
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 500V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 700V)
GC3M0120100K Rev.
3, 10-2020
6
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Typical Performance
300
250
200
150
100
50
180
160
140
120
100
80
Conditions:
Conditions:
I
DS
= 15 A
T =
J
25 °C
E
Total
E
Total
V
DD
= 700 V
R
G(ext)
=
2.5 Ω
V
GS
= -4/+15 V
L =
158 μH
V
DD
=
700 V
15 A
I
DS
=
V
GS
=
-4/+15 V
E
On
GC3M0120100K
158 μH
FWD =
L =
GC3M0120100K
FWD =
E
On
60
E
Off
40
E
Off
20
0
0
0
25
50
75
100
125
150
175
200
0
5
10
15
20
25
Junction Temperature, T
J
(°C)
External Gate Resistor RG(ext) (Ohms)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
30
Conditions:
T
J
= 25 °C
V
DD
= 700
V
I
DS
= 15 A
V
GS
= -4/+15 V
FWD = GC3M0120100K
25
20
15
10
5
t
d(off)
t
r
t
f
t
d(on)
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
GC3M0120100K Rev.
3, 10-2020
7
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Test Circuit Schematic
R
G
Q
1
L
V
GS
= – 4 V
KS
V
DC
C
DC
Q
2
R
G
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
GC3M0120100K Rev.
3, 10-2020
8
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Package Dimensions
Package TO-247-4L
GC3M0120100K Rev.
3, 10-2020
9
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0120100K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Package Dimensions
Package TO-247-4L
GC3M0120100K Rev.
3, 10-2020
10
Copyright
2020 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
