SUPSiC-GC3M0160120D
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GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Features
V
DS
I
D
R
DS(on)
1200 V
17 A
•
•
•
•
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
@
25˚C
160 m
Ω
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
TO-247-3
•
•
•
•
Renewable energy
High voltage DC/DC converters
Switch Mode Power Supplies
UPS
Package
Part Number
Package
TO-247-3
GC3M0160120D
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
1200
-8/+19
-4/+15
17
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
AC (f >1 Hz)
Static
Note: 1
Note: 2
Fig. 19
V
GS
= 15
V
,
T
C
= 25˚C
V
GS
= 15
V
,
T
C
= 100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
12
34
97
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 150 ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M
d
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
GC3M0160120D Rev.
2, 10-2019
1
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
GS
= 0
V
,
I
D
= 100 μA
2.8
2.2
1
3.6
V
DS
= V
GS
, I
D
= 2.33 mA
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 2.33 mA, T
J
= 150ºC
V
DS
= 1200
V
,
V
GS
= 0 V
V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
μA
nA
10
250
208
V
GS
= 15
V
,
V
DS
= 0 V
160
256
5.2
4.9
V
GS
= 15
V
,
I
D
= 8.5 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
GS
= 15
V
,
I
D
= 8.5 A, T
J
= 150ºC
V
DS
= 20
V
,
I
DS
= 8.5 A
g
fs
S
Fig. 7
V
DS
= 20
V
,
I
DS
= 8.5 A, T
J
= 150ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
632
39
Fig. 17,
18
V
GS
= 0
V
,
V
DS
= 1000 V
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 1 MHz
3
AC
V
= 25 mV
22.5
μJ
μJ
Fig. 16
E
ON
E
OFF
E
ON
Turn-On Switching Energy (SiC Diode FWD)
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
183
16
V
DS
= 800
V
,
V
GS
= -4 V/15
V
,
I
D
= 8.5 A,
Fig. 26,
29
R
G(ext)
= 2.5 Ω, L= 336 μH,
T
J
= 150ºC
294
V
DS
= 800
V
,
V
GS
= -4 V/15
V
,
I
D
= 8.5 A,
Fig. 26,
29
μJ
R
G(ext)
= 2.5 Ω, L= 336 μH,
T
J
= 150ºC
E
OFF
t
d(on)
t
r
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
14
30
16
V
DD
= 800
V
,
V
GS
= -4 V/15 V
Rise Time
I
D
= 8.5 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
Fig. 27,
28
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
20
13
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
8
9
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 8.5 A
12
38
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T
C
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.5
V
V
V
GS
= -4
V
,
I
SD
= 3 A
V
GS
= -4
V
,
I
SD
= 3 A, T
= 150 °C
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.0
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
17
34
A
Note 1
Note 1
V
GS
= -4
V
,
T
= 25 ˚C
J
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recover time
34
ns
V
GS
= -4
V
,
I
SD
= 8.5 A, V
R
= 800 V
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
194
8
nC
A
dif/dt = 844 A/µs, T
= 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Typ.
Symbol
Parameter
Unit
Test Conditions
Note
R
θ
JC
Thermal Resistance from Junction to Case
1.29
°C/W
Fig. 21
GC3M0160120D Rev.
2, 10-2019
2
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
GS
= 15V
Conditions:
T
j
= -55 °C
tp = < 200 µs
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 13V
V
GS
= 11V
V
GS
= 11V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
V
GS
= 7V
0
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
40
35
30
25
20
15
10
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Conditions:
T
j
= 150 °C
tp = < 200 µs
Conditions:
I
DS
= 8.5 A
V
GS
= 15 V
t
p
< 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
j
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
450
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
Conditions:
I
DS
= 8.5 A
t
p
< 200 µs
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
j
= 150 °C
V
GS
= 11 V
GS
= 13 V
V
GS
= 15 V
V
T
j
= -55 °C
T
j
= 25 °C
0
0
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
Drain-Source Current, I
DS
(A)
Junction Temperature, T
j
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
GC3M0160120D Rev.
2, 10-2019
3
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
40
35
30
25
20
15
10
5
-10
-8
-6
-4
-2
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
-5
V
GS
= -4 V
V
GS
= 0 V
-10
-15
-20
-25
-30
-35
-40
T
J
= 150 °C
V
GS
= -2 V
T
J
= 25 °C
T
J
= -55 °C
Conditions:
T
j
= -55°C
0
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
V
GS
= -4 V
-5
-5
V
GS
= -4 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -2 V
-10
-15
-20
-25
-30
-35
-40
-10
V
GS
= -2 V
-15
-20
-25
-30
-35
-40
Conditions:
T
j
= 25°C
t
p
< 200 µs
Conditions:
T
j
= 150°C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
V
GS
= V
DS
I
DS
= 2.33 mA
Conditions:
I
DS
= 8.5 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
GC3M0160120D Rev.
2, 10-2019
4
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-5
-5
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
-30
-35
-40
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
j
= 25 °C
p
< 200 µs
Conditions:
T
j
= -55 °C
p
< 200 µs
t
t
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
-10
-8
-6
-4
-2
0
30
25
20
15
10
5
0
V
GS
= 0 V
-5
-10
V
GS
= 5 V
GS
= 10 V
V
GS
= 15 V
-15
-20
-25
-30
-35
-40
V
Conditions:
T
j
= 150 °C
t
p
< 200 µs
0
0
200
400
600
800
1000
1200
Drain-Source Voltage V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
V
AC
= 25 mV
f = 1 MHz
C
iss
f = 1 MHz
1000
1000
100
10
C
iss
100
10
1
C
oss
C
oss
C
rss
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
1200
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1200V)
GC3M0160120D Rev.
2, 10-2019
5
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
18
16
14
12
10
8
100
90
80
70
60
50
40
30
20
10
0
Conditions:
T
J
≤ 150
°C
Conditions:
T
J
≤ 150
°C
6
4
2
0
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
0.5
0.3
Limited by R
DS On
10 µs
100 µs
10.00
1 ms
0.1
100 ms
100E-3
10E-3
1E-3
0.05
0.02
0.01
1.00
0.10
0.01
SinglePulse
Conditions:
T
C
= 25 °C
D = 0,
Parameter:
t
p
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
350
300
250
200
150
100
50
450
Conditions:
T
J
= 25 °C
DD
= 600 V
R
G(ext)
=
2.5 Ω
GS
= -4/+15 V
Conditions:
T
J
= 25 °C
DD
= 800 V
R
G(ext)
=
2.5 Ω
GS
= -4/+15 V
E
Total
400
350
300
250
200
150
100
50
E
Total
E
On
V
V
V
V
E
On
FWD =
GC3M0160120D
L =
336 μH
FWD = GC3M0160120D
L =
336 μH
E
Off
E
Off
0
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 800V)
GC3M0160120D Rev.
2, 10-2019
6
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Typical Performance
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
Conditions:
Conditions:
I
DS
V
DD
=
8.5 A
=
800 V
T =
V
DD
25 °C
J
=
800 V
8.5 A
E
Total
R
G(ext)
=
2.5 Ω
-4/+15 V
336 μH
I
DS
=
E
Total
E
On
V
GS
L =
=
V
GS
=
-4/+15 V
FWD =
GC3M0160120D
E
On
FWD =
GC3M0160120D
FWD = GC4D05120A
L =
336 μH
E
Total with Schottky
E
On with Schottky
E
Off with Schottky
E
Off
E
Off
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
50
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 8.5 A
40
30
20
10
0
t
d(off)
V
GS
= -4/+15 V
FWD = GC3M0160120D
t
d(on)
t
r
t
f
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
GC3M0160120D Rev.
2, 10-2019
7
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Test Circuit Schematic
GC3M0160120D
GC3M0160120D
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
GC3M0160120D Rev.
2, 10-2019
8
Copyright
2019 Wuxi Gwok Semiconductor Co.,Ltd All rights reserved.
©
GC3M0160120D
无 国晶微半 体技 有限公司
Wuxi Gwok Semiconductor Co.,Ltd
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Package Dimensions
Inches
Millimeters
Min
Package TO-247-3
POS
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ
Pin 1 = Gate
•ꢀ
Pin 2, 4 = Drain
•ꢀ
Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
GC3M0160120D Rev.
2, 10-2019
9
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