Suzhou-Good-Ark-Elec-2N7002K

2N7002K  

60V N-Channel MOSFET  

F

EATURES  

●

V

DS

=60V, I

D

=0.3A  

R

DS(ON)

<

3.5

Ω

@ V

GS

=5V  

R

DS(ON)

<

3

Ω

@ V

GS

=

10

V  

ESD Rating: 1000V HBM  

●

High

P

ower and

C

urrent

H

and

l

ing

C

apability  

●

Lead

F

ree  

●

Surface Mount Package  

Schematic

D

iagram  

APPLICATIONS  

●

●

Direct Logic-Level Interface: TTL/CMOS  

Drivers: Relays, Solenoids, Lamps  

Hammers, Display, Memories, Transistors etc  

Battery Operated Systems  

Marking and

P

in Assignment  

●

●

Solid-State Relays  

SOT-23

T

op

V

iew  

PACKAGE MARKING AND ORDERING INFORMATION  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

Quantity  

S72  

2N7002K  

SOT-23  

Ø180mm  

8 mm  

3000 units  

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise noted)  

Parameter Symbol  

Limit  

60  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

DS  

V

GS  

±20  

0.3  

I

D  

A

0.26  

I

D

(7

0°C

)  

Drain Current-Continuous@ Current-Pulsed (Note 1)  

0.8  

A

W

°C  

I

DM  

P

D  

Maximum Power Dissipation  

0.43  

Operating Junction and Storage Temperature Range  

-55

T

o

1

75  

T

J

,T

STG  

THERMAL CHARACTERISTICS  

°C

/W  

Thermal Resistance,Junction-to-Ambient (Note 2)  

R

θJA  

350  

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Drain-Source Breakdown Voltage  

BV

DSS  

V

GS

=0V I

D

=250μA  

60  

V

1/6  

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2N7002K  

60V N-Channel MOSFET  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

I

DSS  

V

DS

=60V,V

GS

=0V  

V

GS

=±5V,V

DS

=0V  

V

GS

=±10V,V

DS

=0V  

V

GS

=±20V,V

DS

=0V  

V

DS

=0V, I

G

=±250uA  

1

μA  

nA  

nA  

uA  

V

100  

150  

10  

I

GSS  

Gate-Source Breakdown Voltage  

ON CHARACTERISTICS (Note 3)  

Gate Threshold Voltage  

BV

GSO  

±20  

1

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=0.5A  

V

GS

=5V, I

D

=0.05A  

V

DS

=10V,I

D

=0.2A  

2.5  

3

V

Ω

S

Drain-Source On-State Resistance  

3.5  

Forward Transconductance  

DYNAMIC CHARACTERISTICS (Note4)  

Input Capacitance  

0.08  

C

lss  

C

oss  

C

rss  

30  

6

PF  

PF  

PF  

V

DS

=25V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING CHARACTERISTICS (Note 4)  

Turn-on Delay Time  

3

V

DD

=30V,V

GS

=10V,  

R

GEN

=10Ω

，

R

L

=150Ω  

I

D

=0.2A  

t

d(on)  

t

d(off)  

Q

g  

25  

35  

nS  

nS  

nC  

Turn-Off Delay Time  

Total Gate Charge  

V

DS

=10V,I

D

=0.25A,V

GS

=4.5V  

0.4  

0.6  

DRAIN-SOURCE DIODE CHARACTERISTICS  

Diode Forward Voltage (Note 3)  

V

SD  

V

GS

=0V,I

S

=0.2A  

1.3  

V

NOTES:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.  

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4.

Guaranteed by design, not subject to production testing.  

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2N7002K  

60V N-Channel MOSFET  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

Vdd  

t

on  

t

off  

t

f  

t

r  

t

d(on)  

t

d(off)  

Rl  

Vin  

90%  

D

Vout  

90%  

Vgs  

V

OUT  

INVERTED  

Rgen  

G

10%  

90%  

10%  

50%  

S

V

IN  

50%  

10%  

PULSE WIDTH  

Figure 2

.

Switching Waveforms  

Figure 1

.

Switching Test Circuit  

T

J

-Junction Temperature(

°C

)  

T

J

-Junction Temperature(

°C

)  

Figure 4

.

Drain Current  

Figure 3

.

Power Dissipation  

I

D

– Drain Current (A)  

V

ds

Drain-Source Voltage (V)  

Figure 5

.

Output

Characteristics  

Figure 6

.

Drain-Source On-Resistance  

3/6  

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2N7002K  

60V N-Channel MOSFET  

V

gs

Gate-Source Voltage (V)  

T

J

-Junction Temperature(

°C

)  

Figure 7

.

Transfer Characteristics  

Figure 8

.

Drain-Source On-Resistance  

V

ds

Drain-Source Voltage (V)  

V

gs

Gate-Source Voltage (V)  

Figure 10

.

Capacitance vs V

ds  

Figure 9

.

R

dson

vs V

gs  

Q

g

Gate Charge (nC)  

V

sd

Source-Drain Voltage (V)  

Figure 11

.

Gate Charge  

Figure 12

.

Source- Drain Diode Forward  

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2N7002K  

60V N-Channel MOSFET  

V

ds

Drain-Source Voltage (V)  

Figure 13

.

Safe Operation Area  

Square Wave Pluse Duration(sec)  

Figure 14

.

Normalized Maximum Transient Thermal Impedance  

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2N7002K  

60V N-Channel MOSFET  

SOT-23 PACKAGE INFORMATION  

Dimensions in Millimeters (UNIT:mm)  

Dimensions in Millimeters  

Symbol  

MIN.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

MAX.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

A

A1  

A2  

b

c

D

E

E1  

e

0.950TYP  

0.550REF  

e1  

L

1.800  

2.000  

L1  

θ

0.300  

0°  

0.500  

8°  

NOTES  

1. All dimensions are in millimeters.  

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

.

 

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.  

4. Dimension L is measured in gauge plane.  

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.  

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