We use cookies to ensure that we give you the best experience on our website.

Taiwan-Semiconductor-BC849CW-RFG

Part #Taiwan-Semiconductor-BC849CW-RFG
Download 
Taiwan-Semiconductor-BC849CW-RFG
BC846AW
–
BC850CW  
Taiwan Semiconductor  
NPN General Purpose Transistor  
FEATURES  
●
Low reverse current, high reliability  
●
Surface device type mounting  
●
Moisture sensitivity level 1  
●
Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
●
High temperature soldering guaranteed : 260°C/10s  
●
RoHS Compliant  
KEY PARAMETERS  
PARAMETER  
VALUE UNIT  
I

C  

0.1  
30 – 80  
30 – 65  
5 – 6  
A
V

CBO  

V

CEO  

V
V
V

EBO  

V
●
Halogen-free according to IEC 61249-2-21  
T

J MAX  

Package  
150  
°C  
SOT-323  
APPLICATIONS  
●
General-purpose switching and amplification  
MECHANICAL DATA  
●
Case: SOT-323  
●
Terminal: Matte tin plated, lead free., solderable per MIL-STD-202,  
Method 208 guaranteed  
●
Weight: 5.00mg (approximately)  
SOT-323  
ABSOLUTE MAXIMUM RATINGS
(T

A

= 25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
mW  
A
Power Dissipation  
P

D  

200  
Collector Current  
I

C  

0.1  
Peak Collector Current  
Junction temperature range  
Storage temperature range  
I

CM  

T

J  

0.2  
A
-55 to +150  
-55 to +150  
°C  
T

STG  

°C  
1
Version: C2102  

BC846AW
–
BC850CW  
Taiwan Semiconductor  
ELECTRICAL SPECIFICATIONS
(T

A

= 25°C unless otherwise noted)  
PARAMETER  
CONDITIONS  
SYMBOL  
MIN  
80  
50  
30  
30  
50  
65  
45  
30  
30  
45  
6
MAX  
UNIT  
V
BC846AW/BW/CW  
BC847AW/BW/CW  
BC848AW/BW/CW  
BC849AW/BW/CW  
BC850AW/BW/CW  
BC846AW/BW/CW  
BC847AW/BW/CW  
BC848AW/BW/CW  
BC849AW/BW/CW  
BC850AW/BW/CW  
BC846AW/BW/CW  
BC847AW/BW/CW  
BC848AW/BW/CW  
BC849AW/BW/CW  
BC850AW/BW/CW  
–
–
V
Collector-Base  
Breakdown  
Voltage  
I
C
= 10μA  
V

CBO  

–
V
–
V
–
V
–
V
–
V
Collector-Emitter  
Breakdown  
Voltage  
I
C
= 10mA  
V
(BR)CEO  
–
V
–
–
V
V
–
V
6
–
V
Emitter-Base  
Breakdown  
Voltage  
I
E
=
1μA  
V

EBO  

5
–
V
5
–
V
5
–
V
Collector Cut-off Current  
Emitter Cut-off Current  
V
CB
= 30V  
V
EB
= 5V  
I
CBO  
I
EBO  
–
15  
100  
220  
450  
800  
0.25  
0.60  
nA  
nA  
–
–
BC846AW – BC850AW  
110  
200  
420  
–
DC Current Gain  
BC846BW – BC850BW
 
V
CE
= 5V, I
C
= 2mA  
BC846CW – BC850CW  
h
FE  
–
–
I
C
= 10mA, I
B
= 0.5mA  
V
Collector-Emitter Saturation Voltage  
Transition Frequency  
V
CE(sat)  
f
T  
I
C
= 100mA, I
B
= 5mA  
–
V
V
CE
= 5V, I
C
= 10mA ,  
f = 100MHz  
100  
–
MHz  
V
CE
= 5V, I
C
= 2mA  
V
CE
= 5V, I
C
= 10mA  
0.58  
–
0.70  
0.77  
V
V
Base Emitter Voltage  
V
BE  
C
ob  
V
CB
= 10V, I
E
= 0,  
f = 1MHz  
Collector Output Capacitance  
–
4.50  
pF  
2
Version: C2102  

BC846AW
–
BC850CW  
Taiwan Semiconductor  
ORDERING AND MARKING INFORMATION  
ORDERING CODE  
BC846AW RFG  
BC846BW RFG  
BC846CW RFG  
BC847AW RFG  
BC847BW RFG  
BC847CW RFG  
BC848AW RFG  
BC848BW RFG  
BC848CW RFG  
BC849AW RFG  
BC849BW RFG  
BC849CW RFG  
BC850AW RFG  
BC850BW RFG  
BC850CW RFG  
BC846AW RF  
BC846BW RF  
BC846CW RF  
BC847AW RF  
BC847BW RF  
BC847CW RF  
BC848AW RF  
BC848BW RF  
BC848CW RF  
BC849AW RF  
BC849BW RF  
BC849CW RF  
BC850AW RF  
BC850BW RF  
BC850CW RF  
MARKING  
1A  
PACKAGE  
PACKING  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
3K / 7″ Reel  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
1B  
1C  
1E  
1F  
1G  
1E  
1F  
1G  
1E  
1F  
1G  
1E  
1F  
1G  
1A  
1B  
1C  
1E  
1F  
1G  
1E  
1F  
1G  
1E  
1F  
1G  
1E  
1F  
1G  
Notes:  
1.
“G” means green compound (halogen free)  
3
Version: C2102  

BC846AW
–
BC850CW  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(T

A

= 25°C unless otherwise noted)  
Fig.1 Normalized DC Current Gain  
Fig.2 “Saturation” and “On” Voltages  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
10  
V

CE

= 10V  
V

BE(sat)

@ I

C

/ I

B

= 10  
V

BE(OFF)

@ V

CE

= 10 V  
1
V

CE(sat)

@ I

C

/ I

B

= 10  
0.1  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
I

C

, COLLECTOR CURRENT (mAdc)  
I

C

, COLLECTOR CURRENT (mAdc)  
Fig.3 Collector Saturation Region  
Fig.4 Base-Emitter Current (mA)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
-55

o

C to +125

O

C  
I

C

=200mA  
I

C

=100mA  
I

C

=50mA  
I

C

=20mA  
I

C

=10mA  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
I

B

, BASE CURRENT (mA)  
I

C

, COLLECTOR CURRENT (mA)  
Fig.5 Capacitances  
Fig.6 Current-Gain-Bandwidth Product  
10  
1000  
100  
10  
C

Ib  

V

CE

= 10 V  
C

Ob  

1
0
1
10  
100  
0.1  
1
10  
100  
V

R

, REVERSE VOLTAGE (V)  
I

C

, COLLECTOR CURRENT (mAdc)  
4
Version: C2102  

BC846AW
–
BC850CW  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(T

A

= 25°C unless otherwise noted)  
Fig.7 DC Collector Current (mA)  
Fig.8 “On” Voltage  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
10  
V

CE

= 5V  
V

BE(sat)

@ I

C

/ I

B

= 10  
V

BE(OFF)

@ V

CE

= 10 V  
1
V

CE(sat)

@ I

C

/ I

B

= 10  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
1000  
I

C

, COLLECTOR CURRENT (mA)  
I

C

, COLLECTOR CURRENT(mA)  
Fig.9 Collector Saturation Region  
Fig.10 Base-Emitter Temperature Coefficient  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
-1.0  
-55

o

C to +125

O

C  
-1.4  
-1.8  
-2.2  
-2.6  
-3.0  
I

C

=200mA  
I

C

=100mA  
I

C

=50mA  
I

C

=20mA  
I

C

=10mA  
Θ

VB

for V

BE  

0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
1000  
I

B

, BASE CURRENT (mA)  
I

C

, COLLECTOR CURRENT (mA)  
Fig.11 Capacitance  
Fig.12 Current-Gain-Bandwidth Product  
100  
10  
1
1000  
100  
10  
V

CE

= 5V  
C

Ib  

C

Ob  

0.1  
1
10  
100  
0
1
10  
100  
1000  
I

C

, COLLECTOR CURRENT (mA)  
V

R

, Reverse Voltage (V)  
5
Version: C2102  

BC846AW
–
BC850CW  
Taiwan Semiconductor  
PACKAGE OUTLINE DIMENSIONS  
SOT-323  
SUGGESTED PAD LAYOUT  
6
Version: C2102  

BC846AW
–
BC850CW  
Taiwan Semiconductor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability  
for application assistance or the design of
Purchasers’ products.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
7
Version: C2102  

Related Posts