Tak-Cheong-DTC143ZE

Part #Tak-Cheong-DTC143ZE
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Tak-Cheong-DTC143ZE
TAK CHEON
G

®  

SEMICONDUCTOR  
SOT-523 Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
Green Product  
This new series of digital transistors is designed to replace a single device and  
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a  
single transistor with a monolithic bias network consisting of two resistors: a  
series base resistor and a base-emitter resistor. The BRT eliminates these  
individual components by integrating them into a single device. The device is  
designed for low power surface mount applications.  
3
Absolute Maximum Ratings
(
T

A

= 25°C unless otherwise noted)  
2
Symbol  
Parameter  
Value  
Units  
V

CBO  

V

CEO  

I

C  

Collector-Base Voltage  
50  
50  
V
V
1
Collector-Emitter Voltage  
Collector Current  
100  
mA  
mW  
°C /W  
°C  
SOT-523 (SC-75A)  
P

D  

Power Dissipation  
150  
Thermal Resistance from Junction to Ambient  
Junction & Storage Temperature Range  
600  
R

θ
JA  

T

J

T

STG  

-55 to +150  
These ratings are limiting values above which the serviceability of the device may be impaired.  
Specification Features:  
Electrical Symbol:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
RoHS Compliant  
Green EMC  
Matte Tin(Sn) Lead Finish  
Weight: approx. 0.002g  
DB Number: DB-250  
Aug. 2014, Revision A  
Page 1  

TAK CHEON
G

®  

SEMICONDUCTOR  
Device Marking & Resistor Values:  
Device  
Marking  
24  
R1 (K
Ω
)  
10  
R2 (K
Ω
)  
DTC114EE  
DTC124EE  
DTC144EE  
DTC114YE  
DTC114TE  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
10  
22  
47  
47  
25  
22  
26  
47  
64  
10  
04  
10  
∞
∞
2.2  
4.7  
47  
03  
4.7  
2.2  
4.7  
4.7  
22  
22  
23  
E23  
45  
47  
E42  
2.2  
47  
Electrical Characteristics
(T

A

= 25°C unless otherwise noted)  
Off Characteristics  
Limits  
Unit  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
I

CBO  

I

CEO  

I

EBO  

Collector-Base Cutoff Current  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
V

CB

=50V, I

E

=0A  
V

CE

=50V, I

B

=
0A  
V

EB

=6.0V, I

C

=
0A  
–
–
100  
nA  
nA  
–
–
500  
DTC114EE  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.50  
0.20  
0.10  
0.20  
0.90  
1.90  
2.30  
1.50  
0.18  
0.13  
0.20  
–
DTC124EE  
DTC144EE  
–
DTC114YE  
–
DTC114TE  
–
mA  
DTC143TE  
–
DTC123EE  
–
DTC143EE  
–
DTC143ZE  
–
DTC124XE  
–
DTC123JE  
–
V

(BR)CBO  

V

(BR)CEO  

Collector-Base Breakdown Voltage  
50  
I

C

=10uA, I

E

=
0A  
Volts  
Volts  
Collector-Emitter Breakdown Voltage  
(Note 1)  
50  
–
–
I

C

=2.0mAA, I

B

=
0A  
Note 1: Pulse Test.
 
Pulse width <300us, Duty cycle < 2.0%)  
DB Number: DB-250  
Aug. 2014, Revision A  
Page 2  

TAK CHEON
G

®  

SEMICONDUCTOR  
On Characteristics
(Note 1)  
Limits  
Unit  
Symbol  
H

FE  

Parameter  
Test Condition  
Min  
Typ  
Max  
DC Current Dain  
V

CE

=10V, I

C

=
5.0mA  
DTC114EE  
DTC124EE  
DTC144EE  
DTC114YE  
DTC114TE  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
35  
60  
60  
—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
100  
140  
140  
350  
350  
15  
80  
80  
160  
160  
8.0  
15  
30  
80  
200  
150  
140  
80  
80  
V

CE(sat)  

Collector-Emitter Saturation Voltage  
DTC114EE  
I

C

=10mA, I

B

=0.3mA  
I

C

=10mA, I

B

=0.3mA  
I

C

=10mA, I

B

=0.3mA  
I

C

=10mA, I

B

=0.3mA  
I

C

=10mA, I

B

=1mA  
I

C

=10mA, I

B

=1mA  
I

C

=10mA, I

D

=5mA  
I

C

=10mA, I

D

=1mA  
I

C

=10mA, I

D

=1mA  
I

C

=10mA, I

B

=1mA  
I

C

=10mA, I

B

=0.3mA  
R

L

= 1.0K
Ω
 
DTC124EE  
DTC144EE  
DTC114YE  
DTC114TE  
Volts  
—  
—  
0.25  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
V

OL  

Output Voltage (on)  
DTC114EE  
V

CC

=5.0V, V

B

=2.5V  
DTC124EE  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=3.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
V

CC

=5.0V, V

B

=2.5V  
DTC144EE  
DTC114YE  
DTC114TE  
Volts  
—  
—  
0.20  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
DB Number: DB-250  
Aug. 2014, Revision A  
Page 3  

TAK CHEON
G

®  

SEMICONDUCTOR  
On Characteristics  
Limits  
Unit  
Symbol  
V

OH  

Parameter  
Test Condition  
Min  
Typ  
Max  
Output Voltage (on)  
R

L

= 1.0K
Ω  
V

CC

=5.0V, V

B

=0.5V  

CC

=5.0V, V

B

=0.5V  
DTC114EE  
DTC124EE  
DTC144EE  
DTC114YE  
DTC114TE  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
V
V

CC

=5.0V, V

B

=0.5V  
V

CC

=5.0V, V

B

=0.5V  
V

CC

=5.0V, V

B

=0.25V  
4.9  
—  
—  
Volts  
V

CC

=5.0V, V

B

=0.25V  
V

CC

=5.0V, V

B

=0.5V  
V

CC

=5.0V, V

B

=0.5V  
V

CC

=5.0V, V

B

=0.25V  
V

CC

=5.0V, V

B

=0.5V  
V

CC

=5.0V, V

B

=0.5V  
Electrical Characteristics
(T

A

= 25°C unless otherwise noted)  
Symbol  
R1  
Unit  
Characteristic  
Min  
Typ  
Max  
Input Resistor  
DTC114EE  
7.0  
15.4  
32.9  
7.0  
10  
22  
13  
28.6  
61.1  
13  
DTC124EE  
DTC144EE  
DTC114YE  
DTC114TE  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
DTC114EE  
DTC124EE  
DTC144EE  
DTC114YE  
DTC114TE  
DTC143TE  
DTC123EE  
DTC143EE  
DTC143ZE  
DTC124XE  
DTC123JE  
47  
10  
7.0  
10  
13  
3.3  
4.7  
2.2  
4.7  
4.7  
22  
6.1  
K
Ω  
1.5  
2.9  
3.3  
6.1  
3.3  
6.1  
15.4  
1.54  
0.8  
28.6  
2.86  
1.2  
2.2  
1.0  
1.0  
1.0  
0.21  
–
R1/R2  
Resistor Ratio  
0.8  
1.2  
0.8  
1.2  
0.17  
–
0.25  
–
–
–
–
—  
0.8  
1.0  
1.0  
0.1  
0.47  
0.047  
1.2  
0.8  
1.2  
0.055  
0.38  
0.038  
0.185  
0.56  
0.056  
DB Number: DB-250  
Aug. 2014, Revision A  
Page 4  

TAK CHEON
G

®  

SEMICONDUCTOR  
SOT-523 Package Outline  
MILLIMETERS  
MIN  
INCHES  
DIM  
MAX  
0.90  
0.10  
0.80  
0.25  
0.35  
0.20  
1.70  
0.90  
1.75  
MIN  
MAX  
0.035  
0.004  
0.031  
0.010  
0.014  
0.008  
0.067  
0.035  
0.069  
A
A1  
A2  
b1  
b2  
c
0.70  
0.00  
0.70  
0.15  
0.25  
0.10  
1.50  
0.70  
1.45  
0.028  
0.000  
0.028  
0.006  
0.010  
0.004  
0.059  
0.028  
0.057  
D
E
E1  
e
0.50 TYP.  
0.020 TYP.  
Typical Soldering Pattern:  
e1  
L
0.90  
1.10  
0.035  
0.043  
0.40 REF.  
0.016 REF.  
L1  
θ
0.10  
0

O  

0.30  
8

O  

0.004  
0

O  

0.012  
8

O  

NOTES:  
1. Above package outline conforms to JEITA EAIJ ED-7500A SC-75A.  
2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.  
DB Number: DB-250  
Aug. 2014, Revision A  
Page 5  

TAK CHEONG

®  

DISCLAIMER NOTICE  
NOTICE  
The information presented in this document is for reference only. Tak Cheong reserves the right to make  
changes without notice for the specification of the products displayed herein.  
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not  
designed to be used with equipment or devices which require high level of reliability and the malfunction of with  
would directly endanger human life (such as medical instruments, transportation equipment, aerospace  
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor  
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such  
improper use of sale.  
This publication supersedes & replaces all information reviously supplied. For additional information, please visit  
our website

, or consult your nearest Tak Cheong’s sales office for further assistance.  
Number: DB-100  
April 14, 2008 / A