TECH-PUBLIC-BSH201

BSH201  

Ω

1.7 ,60V

 

P-Channel MOSFET  

Product Summary  

Typical Applications  

●

Vdss=60V  

ID= 0.5A  





Line current interrupter in telephone sets  

High speed and line transformer drivers  

●

●

R

DS(ON)  

ꢀ

1.7

Ω@V

GS

=-10V  

=

Circuit diagram  

Package and Pin Configuration  

SOT-23  

Marking:610T  

Maximum Ratings

(@T

A

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Value  

Units  

V

DSS  

V

GSS  

I

D  

Drain-Source Voltage  

Gate -Source Voltage  

-60  

±20  

V

V

Continuous Drain Current  

Power Dissipation  

-0.5  

A

P

D  

0.36  

W

R

ΘJ

A  

T

J  

Junction-to-Air  

350  

℃

/W  

℃

Junction Temperature  

Storage Temperature Range  

150  

T

STG  

-55 to +150  

℃

1

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BSH201  

Ω

1.7 ,60V

 

P-Channel MOSFET  

Electrical Characteristics

(@T

A

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test conditions  

MIN  

TYP  

MAX  

UNIT  

OFF Characteristics  

V

DSS  

I

DSS  

I

GSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-body Leakage  

V

GS

=0V,I

D

=-

250μA  

V

DS

=-50V, V

GS

=0V  

V

GS

=±20V, V

DS

=0V  

-60  

–

–

–

–

V

–

–

-100  

±1  

nA  

uA  

ON Characteristics

(NOTE2)  

V

GS

=-4.5V, I

D

=-0.2A  

V

GS

=-10V, I

D

=-0.5A  

V

DS

= V

GS

, I

D

=-250uA  

–

–

–

3

2

R

DS(ON)

Static Drain-Source On-resistance  

Ω

1.7  

-1.8  

V

GS(TH)  

Gate Threshold Voltage  

-1  

-3  

V

Dynamic Characteristics

(NOTE3)  

Ciss  

Coss  

Crss  

Input Capacitance  

–

–

–

50  

15  

5

–

–

–

V

GS

= 0V  

Output Capacitance  

V

DS

= -25V  

f = 1.0MHz  

pF  

Reverse Transfer Capacitance  

Switching Characteristics

(NOTE3)  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

–

–

–

–

–

–

–

2.5  

6.3  

10  

5

13  

20  

9.6  

1.3  

–

V

DD

=-30V,I

D

=-0.27A  

nS  

V

GS

=-10V,R

G

=6

Ω  

4.8  

0.9  

0.2  

0.3  

Q

g  

Q

gs  

Q

gd  

V

DS

=-25V, I

D

=-0.1A  

V

GS

=-5V  

nC  

–

Source-Drain Diode Characteristics  

V

SD  

I

S  

Diode Forward Voltage

(NOTE1)  

I

SD

=-0.26A,V

GS

=0V  

-0.8  

–

-1.4  

-0.5  

V

–

–

Diode Continuous Forward Current  

T

C

=25

℃

 

A

2

台舟电子  

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BSH201  

Ω

1.7 ,60V

 

P-Channel MOSFET  

Ratings and Characteristic Curves

(T

A

=25

℃

unless otherwise noted)  

台舟电子  

3

BSH201  

Ω

1.7 ,60V

 

P-Channel MOSFET  

台舟电子  

4

BSH201  

Ω

1.7 ,60V

 

P-Channel MOSFET  

(T

A

=25

℃

unless otherwise noted)  

SOT-23 Package Information  

A

SOT-23  

Dim  

Min  

2.70  

1.10  

0.90  

0.30  

0.35  

1.80  

0.02  

0.05  

2.20  

Max  

3.10  

1.50  

1.10  

0.50  

0.48  

2.00  

0.10  

0.15  

2.60  

E

A

K

B

B

C

D

J

D

E

G

H

J

G

H

C

K

台舟电子  

5

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