TECH-PUBLIC-FDN306P
| Part # | TECH-PUBLIC-FDN306P |
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FDN306P
Single P-Channel PowerTrench MOSFET
Application
Product Summary
B
V
D
S
S
Load/Power Switching
Interfacing Switching
Logic Level Shift
●
–
12
V
●
●
R
DS(ON)
m
Ω
40
–
2
.6A
I
D
Circuit diagram
Package and Pin Configuration
SOT-23
Marking: 306P
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
-12
±8
V
V
Gate-Source Voltage
I
D
Continuous Drain Current
T
A
= 25
℃
T
A
= 25
℃
A
-2.6
I
DM
P
D
Pulsed Drain Current
note1
Power Dissipation
-10
0.45
A
W
R
θJA
Thermal Resistance, Junction to Ambient
150
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
1
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FDN306P
Single P-Channel PowerTrench MOSFET
Electrical Characteristics ( T
A
= 25°C unless otherwise noted )
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
= -250μA
V
DS
= -20V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±2
0
V
-12
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
–
–
V
DS
= V
GS
, I
D
= -250μA
V
GS
=-4.5V, I
D
=-2.6A
V
GS
=-2.5V, I
D
=-2.3A
V
GS
=-1.8V, I
D
=-1.8A
-0.4
-1.5
40
V
–
–
R
DS(on)
mΩ
Static Drain-Source on-Resistance
–
50
note2
80
Drain to Source Diode Forward
Voltage
V
SD
-1.2
V
Dynamic Characteristics
1138
454
–
–
C
iss
Input Capacitance
Output Capacitance
–
–
pF
pF
V
DS
= -10V, V
GS
= 0V,
C
oss
f
1
M
HZ
=
Switching Characteristics
t
d(on)
t
d(off)
Turn-on Delay Time
Turn-off Delay Time
–
–
11
38
–
–
ns
ns
(VDS= 5V, VGS= 4.5V
, RGEN=6
)
Ω
2
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FDN306P
Single P-Channel PowerTrench MOSFET
SOT-23 Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
3
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