TECH-PUBLIC-TPM2102BC3

TPM2102B  

C3  

N-Channel Enhancement-Mode MOS FETs  

Features  

Applications  

●

V

DS  

●

I

D  

20V  

2.5A  

＜

70 mohm  

＜

98 mohm  

Battery protection  

Load switch  

ƽ

ƽ

ƽ

●

R

DS(ON)

( at V

GS

=4.5V)  

●

R

DS(ON)

( at V

GS

=2.5V)  

Power management  

D

D

S

G

G

SOT323  

S

Absolute Maximum Ratings (T

A

=25°C unless otherwise specified)  

Parameter  

Symbol  

V

DS  

Limit  

20  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

GS  

±

10  

V

T

A

=25

℃

@ Steady State  

T

A

=70

℃

@ Steady State  

2.5  

2.0  

I

D  

A

Pulsed Drain Current

A  

Total Power Dissipation @ T

A

=25

℃  

I

DM  

14  

0.7  

A

P

D  

W

Thermal Resistance Junction-to-Ambient @ Steady State

B  

Junction and Storage Temperature Range  

R

θ

JA  

178  

℃

/

W  

℃

T

J

,T

STG  

-55

～

+150  

1

TPM2102B  

C3  

N-Channel Enhancement-Mode MOS FETs  

(T =25°C

 

unless otherwise specified)  

Electrical Characteristics  

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

BV

DSS  

V

GS

= 0V, I

D

=250

μA  

V

DS

=20V,V

GS

=0V,T

C

=25

℃

 

V

GS

=

±

10V, V

DS

=0V  

V

DS

= V

GS

, I

D

=250

μA  

V

GS

= 4.5V, I

D

=2.5A  

V

GS

= 2.5V, I

D

=2.0A  

I

S

=2.5A,V

GS

=0V  

20  

V

I

DSS  

1

±

100  

1.1  

70  

μA  

nA  

V

I

GSS  

V

GS(th)  

0.55  

0.78  

57  

Static Drain-Source On-Resistance  

R

DS(ON)  

mΩ  

72  

98  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

V

SD  

1.2  

2.5  

V

A

I

S  

C

iss  

C

oss  

C

rss  

280  

46  

Output Capacitance  

V

DS

=10V,V

GS

=0V,f=1MHZ  

pF  

Reverse Transfer Capacitance  

Switching Parameters  

Total Gate Charge  

29  

Q

g  

Q

gs  

Q

gd  

t

D(on)  

t

r  

2.9  

0.4  

0.6  

13  

Gate Source Charge  

Gate Drain Charge  

V

GS

=4.5V,V

DS

=10V,I

D

=2.5A  

nC  

Turn-on Delay Time  

Turn-on Rise Time  

54  

V

GS

=4.5V,V

DD

=10V, R

L

=1.5

Ω

,  

R

GEN

=3

Ω  

ns  

Turn-off Delay Time  

t

D(off)  

18  

Turn-off Fall Time  

t

f  

11  

2

TPM2102B  

C3  

N-Channel Enhancement-Mode MOS FETs  

Outline Drawing – SOT323  

0.087(2.20)  

0.079(2.00)  

D

0.053(1.35)  

0.045(1.15)  

G

S

0.055(1.40)  

0.047(1.20)  

0.006(0.15)  

0.003(0.08)  

0.043(1.10)  

0.035(0.90)  

0.096(2.45)  

0.085(2.15)  

0.004(0.10)  

0.000(0.00)  

0.016(0.40)  

0.008(0.20)  

0.017(0.425)RE

F

.  

3