Techcode-Semicon-TDM31035
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DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The TDM31035 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
‐
100V/
‐
13A
RDS(ON) <205m
Ω
@ VGS=
‐
10V
RDS(ON) < 300m
Ω
@ VGS=
‐
4V
Reliable and Rugged
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
Rating
‐
100
+20
‐
1
Unit
V
Drain
‐
Source Voltage
Gate
‐
Source Voltage
V
GS
V
Diode Continuous Forward Current
Is
A
I
DP(
T
C
=25
℃
)
I
DP(
T
C
=100
℃
)
I
D (
T
C
=25
℃
)
I
D (
T
C
=100
℃
)
P
D(
T
C
=25
℃
)
P
D(
T
C
=100
℃
)
R
θ
JA
‐
52
A
300
μ
s Pulse Drain Current Tested
Continuous Drain Current
‐
32
A
‐
1
3
note1
‐
8
A
A
50
W
Maximum Power Dissipation
20
W
Thermal Resistance
‐
Junction to Ambient
Thermal Resistance
‐
Junction to Case
Maximum Junction
T
e
mperature
Storage Temperature Range
50
℃
/W
℃
/W
℃
R
θ
JC
2.5
T
J
150
T
STG
‐
55 to 150
℃
NOTES:
1. Max
continuous current is limited by bonding wire.
November 17, 2015
Techcode Semiconductor Limited
1
DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
T
e
st Conditions
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain
‐
Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate
‐
Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=
‐
250
μ
A
V
DS
=
‐
80V,V
GS
=0V
V
GS
=±16V,V
DS
=0V
‐
100
‐
‐
‐
‐
V
‐
‐
‐
1
μ
A
μ
A
I
GSS
±
10
V
GS(th)
V
DS
=VGS,I
D
=
‐
250
μ
A
V
GS
=
‐
10V, I
DS
=
‐
7.8A
V
GS
=
‐
4V, I
DS
=
‐
6A
‐
1
‐
‐
‐
‐
‐
3
V
Drain
‐
Source On
‐
State Resistance
R
DS(ON)
205
300
m
Ω
m
Ω
‐
DYNAMIC CHARACTERISTICS
(Note3)
Input Capacitance
C
iss
C
oss
C
rss
V
DS
=
‐
30V,V
GS
=0V, F=1.0MHz
‐
‐
‐
1050
70
‐
‐
‐
PF
PF
PF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn
‐
on Delay Time
40
t
d(on)
t
r
V
DD
=
‐
30V, R
L
=30
Ω
, V
GEN
=
‐
10V,
R
G
=6
Ω
I
DS
=
‐
1A
‐
‐
‐
‐
‐
‐
‐
‐
‐
11
21
19
100
55
38
‐
nS
nS
nS
nS
nC
nC
nC
nS
nC
Turn
‐
on Rise Time
10
Turn
‐
Off Delay Time
t
d(off)
t
f
55
Turn
‐
Off Fall Time
30
T
o
tal Gate Charge
Q
g
V
DS
=
‐
50V,I
DS
=
‐
7.8A,V
GS
=
‐
10V
I
DS
=
‐
7.8A, dI/dt=100A/
μ
s
V
GS
=0V,I
SD
=
‐
1A
20.9
4.2
5.2
34
Gate
‐
Source Charge
Q
gs
Q
gd
T
rr
Gate
‐
Drain Charge
‐
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN
‐
SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
NOTES:
‐
Q
rr
59
‐
V
SD
‐
‐
0.75
‐
1.1
V
2. Pulse
T
e
st: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Guaranteed
by design, not subject to production testing
November 17, 2015
Techcode Semiconductor Limited
2
DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
Typical Operating Characteristics
November 17, 2015
Techcode Semiconductor Limited
3
DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
Typical Operating Characteristics(Cont.)
November 17, 2015
Techcode Semiconductor Limited
4
DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
Typical Operating Characteristics (Cont.)
November 17, 2015
Techcode Semiconductor Limited
5
DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
Package Information
TO-252-2 Package
November 17, 2015
Techcode Semiconductor Limited
6
DATASHEET
T
echcode
®
TDM31035
P-Channel Enhancement Mode MOSFET
Design Notes
November 17, 2015
Techcode Semiconductor Limited
7
