Techcode-Semicon-TDM31066A
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DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The TDM31066A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 16mΩ @ VGS=10V
RDS(ON) < 22.5mΩ @ VGS=4.5V
Extremely low switching loss
Excellent stability and uniformity
Lead free product is available
TO-252 Package
Application
High Frequency Switching
Synchronous Rectification
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
100
+20
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
A
I
D
（
T
C
=25
℃）
I
D
（
T
C
=100
℃）
I
DM
Drain Current @ Continuous
(Note 1)
27
A
Pulsed Drain Current
(Note 2)
160
50
A
Maximum Power Dissipation
(Note 3)
W
P
D
(T
C
=25
℃
)
R
θJC
Thermal Resistance, Junction-to-Case
(Note 4)
Thermal Resistance, Junction-to-Ambient
(Note 4
，
Note 5)
Avalanche Current, Single pulse
(Note 2
，
Note 6)
Avalanche Energy, Single pulse
(Note 2
，
Note 6)
Maximum Operating Junction Temperature
Storage Temperature Range
1.5
℃
/W
℃
/W
A
R
θJA
62.5
6
I
AS
(L=0.5mH)
E
AS
(L=0.5mH)
T
J
32
mJ
℃
℃
150
-55 To 150
T
STG
April 30, 2021
Techcode Semiconductor Limited
1
DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=80V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
100
–
–
–
–
V
–
–
1
μ
A
nA
I
GSS
±
100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
R
DS(ON)
R
G
V
DS
=VGS, I
D
=250μA
V
GS
=10V, I
D
=20A
1.2
1.8
2.5
16
22.5
–
V
–
–
–
14.3
18.8
1.5
mΩ
mΩ
Ω
Drain-Source On-State Resistance
V
GS
=4.5V, I
D
=10A
Gate Resistance
V
DS
=0V, V
GS
=0V, F=1.0MHz
DYNAMIC CHARACTERISTICS
(Note7)
Input Capacitance
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, F=1.0MHz
V
DS
=50V, V
GS
=10V, R
G
=3.3Ω I
D
=40A
V
DS
=50V, I
D
=40A, V
GS
=10V
–
–
–
1130
496
60
–
–
–
PF
PF
PF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 7)
Turn-on Delay Time
t
d(on)
t
r
–
–
–
–
–
–
–
46
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
55
Turn-Off Delay Time
t
d(off)
t
f
249
105
30
Turn-Off Fall Time
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Q
gd
6
–
–
Gate-Drain Charge
8.2
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
I
S
–
–
–
–
40
–
A
V
SD
T
rr
Q
rr
V
GS
=0V, I
S
=20A
0.8
70
1.0
V
I
F
=20A, dI/dt=100A/μs
–
–
nS
nC
224
1. The maximum current rating is package limited.
2. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
3. The power dissipation PD is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where
additional heatsinking is used.
4. The value of R
θJC
is measured in a still air environment with T
A
=25°C and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user’s specific board design.
5. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
6. The EAS data shows Max. rating. The test condition is V
DS
=50V, V
GS
=10V, L=0.5mH
7. Guaranteed by design, not subject to production testing
April 30, 2021
Techcode Semiconductor Limited
2
DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
Typical Operating Characteristics
April 30, 2021
Techcode Semiconductor Limited
3
DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
Typical Operating Characteristics (Cont.)
April 30, 2021
Techcode Semiconductor Limited
4
DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
Typical Operating Characteristics (Cont.)
April 30, 2021
Techcode Semiconductor Limited
5
DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
Typical Operating Characteristics (Cont.)
April 30, 2021
Techcode Semiconductor Limited
6
DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
Package Information
TO252 Package
April 30, 2021
Techcode Semiconductor Limited
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DATASHEET
TDM31066A
N-Channel Enhancement Mode MOSFET
Design Notes
April 30, 2021
Techcode Semiconductor Limited
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