Techcode-Semicon-TDM3750
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DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
DESCRIPTION
The TDM3750 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
RDS(ON) < 7mΩ @ VGS=10V
RDS(ON) < 10mΩ @ VGS=4.5V
High Power and current handling capability
Lead free product is available
Surface Mount Package
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
DC/DC in Telecoms and Inductrial
ABSOLUTE MAXIMUM RATINGS(T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
120
+20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current @ Current-Pulsed
V
DS
V
GS
V
I
DM
320
99
A
A
I
D
（
T
C
=25
℃）
I
D
（
T
C
=100
℃）
I
D
（
T
C
=25
℃）
P
D
（
T
C
=25
℃）
E
AS
(L=0.5mH)
T
J
Drain Current @ Continuous(Silicon Limited)
63
A
Drain Current @ Continuous(Package limited)
Maximum Power Dissipation
60
A
125
484
150
-55 To 150
W
mJ
℃
℃
Avalanche Energy, Single Pulse
Maximum Operating Junction Temperature
Storage Temperature Range
T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 1)
Thermal Resistance,Junction-to-Case
R
θJA
R
θJC
50
1
℃
/W
℃
/W
February 28, 2020
Techcode Semiconductor Limited
1
DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
120
–
–
V
–
–
1
V
DS
=120V,V
GS
=0V, T
j
=25
℃
V
GS
=±20V,V
DS
=0V
μ
A
nA
V
I
GSS
–
–
±
100
V
GS(th)
R
DS(ON)
V
DS
=VGS,I
D
=250μA
V
GS
=10V, I
D
=20A
1.4
2
2.4
7
Drain-Source On-State Resistance
–
–
–
5.8
7.5
2.6
mΩ
mΩ
Ω
V
GS
=4.5V, I
D
=20A
10
–
Gate Resistance
RG
V
GS
=0V,V
DS
Open, F=1.0MHz
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
=60V,V
GS
=0V, F=1.0MHz
–
–
–
–
–
–
–
–
–
–
–
3510
380
6.5
15
8
–
–
–
–
–
–
–
–
–
–
–
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
nC
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=60V, I
D
=20A, V
GS
=10V,R
G
=10Ω
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
30
9
Total Gate Charge
Q
g
(10V)
Q
g
(4.5V)
Q
gs
V
DD
=60V,I
D
=20A,V
GS
=10V()
45
20
8
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
gd
6
Reverse Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
SD
T
rr
V
GS
=0V,I
S
=20A
–
–
–
0.9
45
1.2
V
I
F
=20A, dI/dt=500A/μs
–
–
nS
nC
Q
rr
270
February 28, 2020
Techcode Semiconductor Limited
2
DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
Typical Operating Characteristics
February 28, 2020
Techcode Semiconductor Limited
3
DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
Typical Operating Characteristics(Cont.)
February 28, 2020
Techcode Semiconductor Limited
4
DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
Typical Operating Characteristics (Cont.)
February 28, 2020
Techcode Semiconductor Limited
5
DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
Package Information
DFN5*6-8 Package
February 28, 2020
Techcode Semiconductor Limited
6
DATASHEET
N-Channel Enhancement Mode MOSFET
TDM3750
Design Notes
February 28, 2020
Techcode Semiconductor Limited
7
