Texas-Instruments-CSD13380F3T
| Part # | Texas-Instruments-CSD13380F3T |
Download  | Texas-Instruments-CSD13380F3T |
CSD13380F3 12V N
沟
道
FemtoFET
™
MOSFET
产品概要
1
特性
T
A
= 25°C
V
DS
典型值
单位
12
V
漏源电压
• 低导通电阻
Q
g
0.91
0.15
nC
nC
栅极电荷总
量
(4.5V)
• 超
低
Q
g
和
Q
gd
• 高漏极工作电流
• 超小尺寸
Q
gd
栅极电荷
（
栅极到漏极
）
V
GS
= 1.8V
96
73
63
–
0.73mm × 0.64mm
• 薄型封装
R
DS(on)
V
GS
= 2.5V
V
GS
= 4.5V
m
Ω
漏源导通电阻
V
GS(th)
0.85
V
– 最大厚度
为
0.36mm
• 集成
型
ESD
保护二极管
阈值电压
介质
– 额定
值
> 3kV
人体放电模
型
(HBM)
– 额定
值
> 2kV
充电器件模
型
(CDM)
• 无铅且无卤素
器件
数量
封装
配送
CSD13380F3
3000
Femto
0.73mm × 0.64mm
基板栅格阵
列
(LGA)
卷带
包装
7
英寸卷带
CSD13380F3T
250
• 符
合
RoHS
(1)
如需了解所有可用封装
，
请参阅数据表末尾的可订购产品附
录。
2
应用
• 针对负载开关应用进行了优化
• 针对通用开关应用进行了优化
• 电池应用
绝对最大额定值
T
A
= 25°C
（
除非另外注明
）
值
12
8
单位
V
V
DS
V
GS
漏源电压
• 手持式和移动类应用
V
栅源电压
3
说明
3.6
I
D
A
A
2.1
13.5
1.4
0.5
3
该
63m
Ω、
12V N
沟道
FemtoFET
™
MOSFET
经过设
计和优化
，
能够最大限度地减小在许多手持式和移动应
用中占用的空间。这项技术能够在替代标准小信号
MOSFET
的同时大幅减小封装尺寸。
I
DM
P
D
W
人体放电模
型
(HBM)
充电器件模
型
(CDM)
。
V
(ESD)
kV
°C
2
T
J
、
T
stg
–
55
至
150
工作结温、
贮存温度
0.36 mm
(1)
覆铜面积最大时的典
型
R
θ
JA
= 90°C/W
（
在
0.06
英寸
(1.52mm)
厚
的
FR4 PCB
上安
装
1
平方英
寸
(6.45cm
2
)
、
2oz
、
0.071mm
厚的铜焊盘时
）
(2)
覆铜面积最小时的典
型
R
θ
JA
= 255°C/W
。
(3)
脉冲持续时
间
≤
100
μ
s
，
占空
比
≤
1%
。
0.73 mm
0.64 mm
典型器件尺寸
G
D
S
.
顶视图
本文档旨在为方便起见
，
提供有
关
TI
产品中文版本的信息
，
以确认产品的概要。有关适用的官方英文版本的最新信息
，
请访问
Table of Contents
4 Revision History
注
：
以前版本的页码可能与当前版本的页码不同
Changes from Revision * (October 2016) to Revision A (February 2022)
Page
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2
5 Specifications
5.1 Electrical Characteristics
T
A
= 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BV
DSS
I
DSS
Drain-to-source voltage
12
V
nA
nA
V
V
GS
= 0
V
,
I
DS
= 250
μ
A
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
V
GS
= 0
V
,
V
DS
= 9.6 V
V
DS
= 0
V
,
V
GS
= 8 V
50
25
I
GSS
V
GS(th)
0.55
0.85
96
1.30
135
92
V
DS
= V
GS
, I
DS
= 250
μ
A
V
GS
= 1.8
V
,
I
DS
= 0.1 A
V
GS
= 2.5
V
,
I
DS
= 0.4 A
V
GS
= 4.5
V
,
I
DS
= 0.4 A
V
DS
= 1.2
V
,
I
DS
= 0.4 A
R
DS(on)
Drain-to-source on resistance
Transconductance
73
m
Ω
63
76
g
fs
4.3
S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
R
G
Input capacitance
120
81
156
105
pF
pF
pF
V
GS
= 0
V
,
V
DS
= 6
V
,
ƒ
= 1 MHz
Output capacitance
Reverse transfer capacitance
Series gate resistance
Gate charge total (4.5 V)
Gate charge gate-to-drain
Gate charge gate-to-source
Gate charge at V
th
Output charge
9.6
16
12.5
Ω
Q
g
0.91
0.15
0.19
0.15
0.81
4
1.2
nC
nC
nC
nC
nC
ns
Q
gd
Q
gs
Q
g(th)
Q
oss
t
d(on)
t
r
V
DS
= 6
V
,
I
DS
= 0.4 A
V
DS
= 6
V
,
V
GS
= 0 V
Turnon delay time
Rise time
4
ns
V
DS
= 6
V
,
V
GS
= 4.5
V
,
I
DS
= 0.4 A, R
G
= 2
Ω
t
d(off)
t
f
Turnoff delay time
Fall time
11
ns
3
ns
DIODE CHARACTERISTICS
V
SD
Q
rr
t
rr
Diode forward voltage
Reverse recovery charge
Reverse recovery time
I
SD
= 0.4 A, V
GS
= 0 V
0.71
2.1
8
1
V
nC
ns
V
DS
= 6
V
,
I
F
= 0.4 A, di/dt = 100 A/
μ
s
5.2 Thermal Information
T
A
= 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
90
R
θ
JA
°C/W
255
(1) Device
mounted on FR4 material with 1-in
2
(6.45-cm
2
), 2-oz (0.071-mm) thick Cu.
(2) Device
mounted on FR4 material with minimum Cu mounting area.
Copyright © 2022
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3
5.3 Typical MOSFET Characteristics
T
A
= 25°C (unless otherwise stated)
5
4.5
4
10
9
8
7
6
5
4
3
2
1
0
3.5
3
2.5
2
1.5
1
T
C
= 125°C
T
C
= 25°C
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0.5
T
C
= -55°C
0
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
– Gate-to-Source Voltage (V)
1.4
1.6
1.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
DS
– Drain-to-Source Voltage (V)
1
D003
D002
图
5-1. Transient Thermal Impedance
图
5-2. Saturation Characteristics
V
DS
= 5 V
图
5-3. Transfer Characteristics
Copyright © 2022
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4
1000
100
10
4.5
4
C
iss
= C
gd
+ C
gs
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
3.5
3
2.5
2
1.5
1
0.5
1
0
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
10
12
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
– Gate Charge (nC)
0.7
0.8
0.9
D005
D004
图
5-5. Capacitance
V
DS
= 6 V
I
D
= 0.4 A
图
5-4. Gate Charge
1.15
1.05
0.95
0.85
0.75
0.65
0.55
0.45
200
180
160
140
120
100
80
T
C
= 25°C, I
D
= 0.4 A
T
C
= 125°C, I
D
= 0.4 A
60
40
20
0
-75 -50 -25
0
25
50
T
C
– Case Temperature (°C)
75 100
125 150 175
0
1
2
3
4
5
6
V
GS
– Gate-to-Source Voltage (V)
7
8
D006
D007
I
D
= 250 µA
图
5-7. On-State Resistance vs Gate-to-Source
Voltage
图
5-6. Threshold Voltage vs Temperature
10
1.5
T
C
= -55°C
T
C
= -40°C
T
C
= 25°C
T
C
= 125°C
T
C
= 150°C
V
GS
= 1.8 V
V
GS
= 4.5 V
1.4
1.3
1.2
1.1
1
1
0.1
0.01
0.9
0.8
0.7
0.001
0.0001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
– Source-to-Drain Voltage (V)
1
-75 -50 -25
0
25
50
T
C
– Case Temperature (°C)
75 100
125 150 175
D009
D008
图
5-9. Typical Diode Forward Voltage
I
D
= 0.4A
图
5-8. Normalized On-State Resistance vs
Temperature
Copyright © 2022
T
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5
100
10
1
10
T
C
= 25
è
C
T
C
= 125
è
C
100 ms
10 ms
1 ms
100 µs
0.1
0.1
1
0.01
1
10
V
DS
– Drain-to-Source Voltage (V)
100
0.1
T
AV
– Time in Avalanche (ms)
1
D010
D011
Single pulse, typical R
θ
JA
= 255°C/W (min Cu)
图
5-11. Single Pulse Unclamped Inductive
Switching
图
5-10. Maximum Safe Operating Area
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
T
A
– Ambient Temperature (°C)
75
100 125 150 175
D012
Typical R
θ
JA
= 255°C/W (min Cu)
图
5-12. Maximum Drain Current vs Temperature
Copyright © 2022
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6
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To
r
eceive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on
Alert me
to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Trademarks
FemtoFET
™
is a trademark of
T
e
xas Instruments.
所有商标均为其各自所有者的财产。
Copyright © 2022
T
e
xas Instruments Incorporated
7
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Mechanical Dimensions
0.73
B
A
0.65
PIN 1 INDEX AREA
0.64
0.56
0.36 MAX
C
SEATING PLANE
0.4
0.225
2
3
0.175
0.51
0.35
0.49
1
0.16
2X
0.14
0.16
0.14
0.015
C B
A
0.015
C A
B
0.26
2X
0.24
A. All
linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994).
B. This
drawing is subject to change without notice.
C. This
package is a PB-free solder land design.
表
7-1. Pin Configuration
POSITION
DESIGNATION
Pin 1
Gate
Pin 2
Source
Pin 3
Drain
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8
7.2 Recommended Minimum PCB Layout
(0.15)
2X (0.25)
0.05 MIN
ALL AROUND
TYP
2X (0.15)
1
3
SYMM
(0.35)
(0.5)
2
(R0.05) TYP
SOLDER MASK
OPENING
TYP
PKG
(0.4)
METAL UNDER
SOLDER MASK
TYP
(0.175)
A. All
dimensions are in millimeters.
7.3 Recommended Stencil Pattern
2X (0.25)
(0.15)
2X (0.2)
1
3
SYMM
(0.4)
(0.5)
2
2X (0.15)
(R0.05) TYP
PKG
2X SOLDER
MASK EDGE
(0.175)
(0.4)
A. All
dimensions are in millimeters.
Copyright © 2022
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9
PACKAGE OPTION ADDENDUM
11-Jan-2022
PACKAGING INFORMATION
Orderable Device
Status Package
Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CSD13380F3
ACTIVE
ACTIVE
PICOSTAR
PICOSTAR
YJM
YJM
3
3
3000 RoHS
& Green
250 RoHS
& Green
NIAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-55 to 150
-55 to 150
D
D
CSD13380F3T
NIAU
(1)
The marketing status values are defined as follows:
ACTIVE:
Product device recommended for new designs.
LIFEBUY:
TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND:
Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW:
Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE:
TI has discontinued the production of the device.
(2)
RoHS:
TI defines “RoHS” to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, “RoHS” products are suitable for use in specified lead-free processes. TI may
reference these types of products as “Pb-Free”.
RoHS Exempt:
TI defines “RoHS Exempt” to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green:
TI defines “Green” to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. – The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a “~” will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material – Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:
The information provided on this page represents TI’s knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI’s liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
7-Sep-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width
(mm) (mm) (mm) (mm) (mm)
Quadrant
(mm) W1
(mm)
CSD13380F3
CSD13380F3
CSD13380F3T
CSD13380F3T
PICOST
AR
YJM
YJM
YJM
YJM
3
3
3
3
3000
3000
250
178.0
180.0
180.0
178.0
8.4
8.4
8.4
8.4
0.7
0.7
0.7
0.7
0.79
0.79
0.79
0.79
0.44
0.44
0.44
0.44
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
Q2
Q2
Q2
Q2
PICOST
AR
PICOST
AR
PICOST
AR
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
7-Sep-2021
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD13380F3
CSD13380F3
CSD13380F3T
CSD13380F3T
PICOSTAR
PICOSTAR
PICOSTAR
PICOSTAR
YJM
YJM
YJM
YJM
3
3
3
3
3000
3000
250
220.0
182.0
182.0
220.0
220.0
182.0
182.0
220.0
35.0
20.0
20.0
35.0
250
Pack Materials-Page 2
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e
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