Texas-Instruments-CSD19531KCS
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CSD19531KCS 100V N
通道
NexFET™
功率金属氧化物半导体场效应晶体
管
(MOSFET)
1
特性
产品概要
1
•
•
•
•
•
•
•
超低
Q
g
和
Q
gd
低热阻
T
A
=25°C
V
DS
典型值
100
37
单位
V
漏源电压
雪崩额定值
Q
g
栅极电荷总量
(10V)
栅极电荷（栅极到漏极）
nC
nC
无铅引脚镀层
符合
RoHS
环保标准
无卤素
Q
gd
7.5
V
GS
= 6V
V
GS
= 10V
2.7
7.3
6.4
R
DS(on)
漏源导通电阻
V
GS(th)
阈值电压
m
Ω
V
晶体管
(TO)-220
塑料封装
2
应用范围
包装介
质
器件
CSD19531KCS
封装
数量
50
运输
•
•
•
次级侧同步整流器
热插拔电信应用
电机控制
TO-220
塑料封装
管
管
(1)
要了解所有可用封装，请见数据表末尾的可订购产品附录。
绝对最大额定值
3
说明
T
A
=25°C
值
单位
V
此
100V
、
6.4m
Ω
、
TO-220 NexFET™
功率
MOSFET
被设计成在功率转换应用中大大降低 损耗。
V
DS
漏源电压
V
GS
栅源电压
100
±20
100
V
持续漏极电流（受封装限制）
.
持续漏极电流（受芯片限制），
T
C
= 25°C
时
测得
Drain (Pin 2)
110
78
I
D
A
持续漏极电流（受芯片限制），
T
C
= 100°C
时测得
I
DM
P
D
285
214
A
功率耗散
W
Gate
(Pin 1)
T
J
， 工作结温，
T
stg
-55
至
175
°C
储存温度
雪崩能量，单一脉冲
I
D
= 60A
，
L = 0.1mH
，
R
G
= 25
Ω
E
AS
180
mJ
Source (Pin 3)
(1)
最大
R
θ
JC
= 0.7ºC/W
，脉冲持续时间
≤
100
μ
s
，占空比
≤
1%
。
R
DS(on)
与
V
GS
间的关系
栅极电荷
20
10
T
C
= 25°C,I
D
= 60A
T
C
= 125°C,I
D
= 60A
I
D
= 60A
V
DS
= 50V
18
9
16
14
12
10
8
8
7
6
5
4
3
2
1
0
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
0
4
8
12
16
20
24
28
32
36
40
Q
g
– Gate Charge
(nC)
V
GS
– Gate-to- Source Voltage (V)
G001
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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目录
1
2
3
4
5
6
7
4
修订历史记录
Changes from Revision B (June 2014) to Revision C
Page
•
•
Changes from Revision A (May 2014) to Revision B
Page
•
Changes from Original (September 2013) to Revision A
Page
•
•
•
•
•
•
•
•
•
•
2
版权
© 2013–2017, Texas Instruments Incorporated
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5 Specifications
5.1 Electrical
Characteristics
T
A
= 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
BV
DSS
I
DSS
Drain-to-source voltage
V
GS
= 0 V, I
D
= 250
μ
A
100
V
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
V
GS
= 0 V, V
DS
= 80 V
V
DS
= 0 V, V
GS
= 20 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 6 V, I
D
= 60 A
V
GS
= 10 V, I
D
= 60 A
V
DS
= 10 V, I
D
= 60 A
1
100
3.3
8.8
7.7
μ
A
nA
V
I
GSS
V
GS(th)
2.2
2.7
7.3
6.4
137
R
DS(on)
g
fs
Drain-to-source on resistance
Transconductance
m
Ω
S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
R
G
Input capacitance
2980
560
13
3870
728
17
pF
pF
pF
Ω
Output capacitance
Reverse transfer capacitance
Series gate resistance
Gate charge total (10 V)
Gate charge gate-to-drain
Gate charge gate-to-source
Gate charge at V
th
Output charge
V
GS
= 0 V, V
DS
= 50 V, ƒ = 1 MHz
1.3
38
2.6
49
Q
g
nC
nC
nC
nC
nC
ns
ns
ns
ns
Q
gd
Q
gs
Q
g(th)
Q
oss
t
d(on)
t
r
7.5
11.9
7.3
98
V
DS
= 50 V, I
D
= 60 A
V
DS
= 50 V, V
GS
= 0 V
Turnon delay time
Rise Time
8.4
7.2
16
V
DS
= 50 V, V
GS
= 10 V,
I
DS
= 60 A, R
G
= 0
Ω
t
d(off)
t
f
Turnoff delay time
Fall time
4.1
DIODE CHARACTERISTICS
V
SD
Q
rr
t
rr
Diode forward voltage
Reverse recovery charge
Reverse recovery time
I
SD
= 60 A, V
GS
= 0 V
0.9
270
83
1
V
nC
ns
V
DS
= 50 V, I
F
= 60 A,
di/dt = 300 A/
μ
s
5.2 Thermal
Information
T
A
= 25°C (unless otherwise stated)
THERMAL METRIC
Junction-to-case thermal resistance
Junction-to-ambient thermal resistance
MIN
TYP
MAX
UNIT
°C/W
°C/W
R
θ
JC
R
θ
JA
0.7
62
Copyright © 2013–2017, Texas Instruments Incorporated
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5.3 Typical
MOSFET Characteristics
T
A
= 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
200
180
160
140
120
100
80
200
V
DS
= 5V
180
160
140
120
100
80
60
60
V
GS
=10V
V
GS
=8V
V
GS
=6V
T
C
= 125°C
T
C
= 25°C
T
C
= −55°C
40
40
20
0
20
0
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
7
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
G001
G001
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
4
Copyright © 2013–2017, Texas Instruments Incorporated
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Typical MOSFET Characteristics (continued)
T
A
= 25°C (unless otherwise stated)
10
100000
10000
1000
100
C
iss
= C
gd
+ C
gs
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
I
D
= 60A
V
DS
= 50V
9
8
7
6
5
4
3
2
1
0
10
1
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
90 100
Q
g
– Gate Charge
(nC)
V
DS
– Drain-to-Source Voltage (V)
G001
G001
Figure 4. Gate Charge
Figure 5. Capacitance
3.3
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
20
18
16
14
12
10
8
I
D
= 250uA
T
C
= 25°C,I
D
= 60A
T
C
= 125°C,I
D
= 60A
6
4
2
0
−75 −50 −25
0
25 50 75
100 125 150 175 200
0
2
4
6
8
10
12
14
16
18
20
T
C
– Case Temperature (ºC)
V
GS
– Gate-to- Source Voltage (V)
G001
G001
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
2.4
2.2
2
100
V
GS
= 6V
V
GS
= 10V
T
C
= 25°C
T
C
= 125°C
10
1.8
1.6
1.4
1.2
1
1
0.1
0.01
0.8
0.6
0.4
0.001
0.0001
I
D
= 60A
−75 −50 −25
0
25 50 75
100 125 150 175 200
0
0.2
0.4
0.6
0.8
1
T
C
– Case Temperature (ºC)
V
SD
− Source-to-Drain Voltage (V)
G001
G001
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Copyright © 2013–2017, Texas Instruments Incorporated
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Typical MOSFET Characteristics (continued)
T
A
= 25°C (unless otherwise stated)
5000
100
T
C
= 25ºC
10us
1ms
DC
T
C
= 125ºC
100us
10ms
1000
100
10
1
Single Pulse
Max R
thetaJC
= 0.7ºC/W
0.1
0.1
10
0.01
1
10
100
1000
0.1
1
V
DS
– Drain-to-Source Voltage (V)
T
AV
– Time in Avalanche (mS)
G001
G001
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
125
100
75
50
25
0
−50 −25
0
25
50
75 100
125 150 175 200
T
C
– Case Temperature (ºC)
G001
Figure 12. Maximum Drain Current vs Temperature
6
版权
© 2013–2017, Texas Instruments Incorporated
ZHCSBK8C
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EPTEMBER 201
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6
器件和文档支持
6.1
接收文档更新通知
后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。
6.2
社区资源
The following links connect to TI community resources. Linked contents are provided “AS IS” by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI’s views; see TI’s
Terms of
Use
.
among engineers.
At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support
TI’s Design Support
Quickly find helpful E2E forums along with design support tools and
contact
information for technical support.
6.3
商标
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4
静电放电警告
这些装置包含有限的内置
ESD
保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止
MOS
门极遭受静电损
伤。
6.5 Glossary
This glossary lists and explains terms, acronyms, and definitions.
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7
机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。要获得这份数据表的浏览器版本，请查阅左侧的导航栏。
7.1 KCS
封装尺寸
4.7
4.4
10.36
9.96
1.32
1.22
8.55
8.15
2.9
2.6
6.5
6.1
(6.3)
(
3.84)
12.5
12.1
19.65 MAX
9.25
9.05
3X
3.9 MAX
13.12
12.70
1
3
0.47
0.34
0.90
0.77
3X
2.79
2.59
2X 2.54
1.36
1.23
3X
5.08
4222214/A 10/2015
注释：
1.
所有控制线性尺寸的单位均为英寸。括号中的尺寸单位均为毫米。括号或括弧中的尺寸均仅供参考。尺寸和容
限值遵循
ASME Y14.5M
。
2.
本图纸如有变更，恕不通知。
3.
参考
JEDEC
注册
TO-220
。
表
1.
引脚配置
位置
引脚
1
名称
栅极
漏极
源极
引脚
2 /
标签
引脚
3
8
版权
© 2013–2017, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package
Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CSD19531KCS
ACTIVE
TO-220
KCS
3
50
RoHS-Exempt
& Green
SN
N / A for Pkg Type
-55 to 175
CSD19531KCS
(1)
The marketing status values are defined as follows:
ACTIVE:
Product device recommended for new designs.
LIFEBUY:
TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND:
Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW:
Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE:
TI has discontinued the production of the device.
(2)
RoHS:
TI defines “RoHS” to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, “RoHS” products are suitable for use in specified lead-free processes. TI may
reference these types of products as “Pb-Free”.
RoHS Exempt:
TI defines “RoHS Exempt” to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green:
TI defines “Green” to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. – The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a “~” will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material – Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:
The information provided on this page represents TI’s knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI’s liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
5-Jan-2022
TUBE
*All dimensions are nominal
Device
Package Name
Package Type
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
CSD19531KCS
CSD19531KCS
KCS
KCS
TO-220
TO-220
3
3
50
50
532
532
34.1
34.1
700
700
9.6
9.6
Pack Materials-Page 1
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产品，
(2)
设计、验
证并测试您的应用，
(3)
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