Texas-Instruments-LM195H-883

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Texas-Instruments-LM195H-883
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November 30, 2010  
LM195QML  
Ultra Reliable Power Transistors  
device is used as an emitter follower with low source  
impedance, it is necessary to insert a 5.0k resistor in series  
with the base lead to prevent possible emitter follower oscil-  
lations. Although the device is usually stable as an emitter  
follower, the resistor eliminates the possibility of trouble with-  
out degrading performance. Finally, since it has good high  
frequency response, supply bypassing is recommended.  
General Description  
The LM195 is a fast, monolithic power integrated circuit with  
complete overload protection. This device, which acts as a  
high gain power transistor, has included on the chip, current  
limiting, power limiting, and thermal overload protection mak-  
ing it virtually impossible to destroy from any type of overload.  
The inclusion of thermal limiting, a feature not easily available  
in discrete designs, provides virtually absolute protection  
against overload. Excessive power dissipation or inadequate  
heat sinking causes the thermal limiting circuitry to turn off the  
device preventing excessive heating.  
Features  
Internal thermal limiting  
■
Greater than 1.0A output current  
■
3.0 μ
A typical base current  
500 ns switching time  
■
■
■
■
■
■
The LM195 offers a significant increase in reliability as well  
as simplifying power circuitry. In some applications, where  
protection is unusually difficult, such as switching regulators,  
lamp or solenoid drivers where normal power dissipation is  
low, the LM195 is especially advantageous.  
2.0V saturation  
Base can be driven up to 40V without damage  
Directly interfaces with CMOS or TTL  
100% electrical burn-in  
The LM195 is easy to use and only a few precautions need  
be observed. Excessive collector to emitter voltage can de-  
stroy the LM195 as with any power transistor. When the  
Ordering Information  
NS Part Number  
SMD Part Number  
NS Package Number  
Package Description  
3LD T0–5 Metal Can  
LM195H/883  
5962–8777801XA  
H03B  
Connection Diagram  
TO-5 Metal Can Package  
20156504  
Bottom View  
See NS Package Number H03B  
© 2010 National Semiconductor Corporation  
201565  

Schematic Diagram  
20156511  
1.0 Amp Lamp Flasher  
Simplified Circuit  
20156516  
20156501  
2

Absolute Maximum Ratings
(
Note 1
)  
Collector to Emitter Voltage  
Collector to Base Voltage  
Base to Emitter Voltage (Forward)  
Base to Emitter Voltage (Reverse)  
Collector Current  
Power Dissipation (
Note 2
)  
Operating Temperature Range  
H-Pkg  
42V  
42V  
42V  
20V  
Internally Limited  
Internally Limited  
−55°C
≤
T

A

≤
+125°C  
Storage Temperature Range  
−65°C
≤
T

A

≤
+150°C  
Lead Temperature
 
(Soldering, 10 sec.)  
Thermal Resistance  
260°C  
ꢀꢀꢀθ

JA  

H-Pkg; Still Air @ 0.5W  
H-Pkg; 500LF/Min Air Flow @ 0.5W  
ꢀꢀꢀθ

JC  

192°C/W  
66°C/W  
H-Pkg @ 1.0W  
29°C/W  
Quality Conformance Inspection  
Mil-Std-883, Method 5005 – Group A  
Subgroup  
Description  
Static tests at  
Temp (°C)  
1
2
+25  
+125  
-55  
Static tests at  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
Settling time at  
Settling time at  
Settling time at  
+25  
+125  
-55  
5
6
7
+25  
+125  
-55  
8A  
8B  
9
+25  
+125  
-55  
10  
11  
12  
13  
14  
+25  
+125  
-55  
3

LM195H/883 Electrical Characteristics  
DC Parameter
 
Collector to Emitter  
Sub-  
groups  
Symbol  
V

CE  

Parameter  
Operating Voltage  
Conditions  
Notes  
Min Max  
Unit  
(
Note 3
)  
42  
V
1, 2, 3  
I

C

≤
I

Max  

DC Parameter
 
Base to Emitter  
Sub-  
groups  
Symbol  
BV

BE  

Parameter  
Conditions  
Notes  
Min Max  
Unit  
Breakdown Voltage  
(
Note 3
)  
42  
V
1, 2, 3  
V

CE

≤
42V  
V

CE

≤
7V  
1.2  
1
A
A
V
V
1
I

SC  

Collector Current  
Saturation Voltage  
2, 3  
1, 2  
3
2
V

Sat  

I

C

= 1A  
2.5  
0
≤
V

BE

≤
42V,  
I

C

≤
I

Max  

I

B  

Base Current  
5
µA  
1, 2, 3  
I

Q  

V

CE

= 42V, V

BE

= 0V  
Quiescent Current  
5
mA  
V
1, 2, 3  
1
V

C

= 46-42V,  
I

L

= 50mA  
-0.03 0.01  
V

Bk  

Thr  
Breakdown Delta V

BE  

Thermal Response  
V

C

= 46-38V  
V

C

= 50-42V  
100µS  
-0.03 0.01  
-0.03 0.01  
V
1
1
1
1
1
1
V
-10  
-10  
-10  
-10  
100  
70  
mV  
mV  
mV  
mV  
500µS  
2mS  
50  
20mS  
10  
AC Parameter  
Sub-  
groups  
Symbol  
Parameter  
Response Time  
Response Time  
Conditions  
Notes  
Min Max  
Unit  
µS  
V

I

= 0-2V, R

L

= 36Ω,  
t

ON  

1.8  
1.8  
9, 10, 11  
9, 10, 11  
V+ = 36V  
V

I

= 2-0V, R

L

= 36Ω,  
t

OFF  

µS  
V+ = 36V  
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed  
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test  
conditions.  
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T

Jmax

(maximum junction temperature),
θ

JA

(package  
junction to ambient thermal resistance), and T

A

(ambient temperature). The maximum allowable power dissipation at any temperature is P

Dmax

= (T

Jmax

– T

A

)/  
θ

JA

or the number given in the Absolute Maximum Ratings, whichever is lower.  
Note 3:
Parameter tested go−no−go only.  
4

Typical Performance Characteristics  
Bias Current  
Quiescent Current  
20156535  
20156536  
Base Emitter Voltage  
Base Current  
20156538  
20156537  
Saturation Voltage  
Response Time  
20156539  
20156540  
5

Response Time  
10V Transfer Function  
20156541  
20156507  
36V Transfer Function  
Transconductance  
20156508  
20156509  
Small Signal Frequency  
Response  
20156510  
6

Typical Applications  
1.0 Amp Voltage Follower  
20156512  
*Solid Tantalum  
Power PNP  
Time Delay  
20156513  
*Protects against excessive base drive  
**Needed for stability  
20156514  
7

1.0 MHz Oscillator  
20156515  
1.0 Amp Negative Regulator  
20156517  
†Solid Tantalum  
8

1.0 Amp Positive Voltage Regulator  
20156518  
†Solid Tantalum  
Fast Optically Isolated Switch  
Optically Isolated Power Transistor  
20156520  
20156519  
CMOS or TTL Lamp Interface  
Two Terminal Current Limiter  
20156522  
20156521  
9

40V Switch  
20156523  
*Drive Voltage 0V to
≥
10V
≤
42V  
6.0V Shunt Regulator with Crowbar  
Two Terminal 100 mA Current Regulator  
20156525  
20156524  
Low Level Power Switch  
Power One-Shot  
20156526  
Turn ON = 350 mV  
Turn OFF = 200 mV  
20156527  
T = R1C  
R2 = 3R1  
R2
≤
82k  
10  

Emitter Follower  
High Input Impedance AC Emitter Follower  
20156528  
*Need for Stability  
20156529  
Fast Follower  
20156530  
*Prevents storage with fast fall time square wave drive  
Power Op Amp  
20156531  
*Adjust for 50 mA quiescent current  
†Solid Tantalum  
11  

6.0 Amp Variable Output Switching Regulator  
20156532  
*Sixty turns wound on Arnold Type A-083081-2 core.  
**Four devices in parallel  
†Solid tantalum  
12  

Revision History Section  
Released  
Revision  
Section  
Changes  
11/30/2010  
A
New Release, Corporate format  
1 MDS data sheets converted into one Corp. data  
sheet format. MNLM195-H Rev 0BL will be archived.  
13  

Physical Dimensions
inches (millimeters) unless otherwise noted  
TO-5 Metal Can Package  
NS Package Number H03B  
14  

Notes  
15  

Notes  
For more National Semiconductor product information and proven design tools, visit the following Web sites at:  
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App Notes  
Audio  
Clock and Timing  
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Interface  
Reference Designs  
Samples  
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Green Compliance  
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Quality and Reliability  
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Voltage References  
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Serial Digital Interface (SDI)
 

Temperature Sensors  
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PowerWise® Design  
University  
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