Texas-Instruments-TRF8010PWPR
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TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
PWP PACKAGE
(TOP VIEW)
Operates from 3.6-V and 4.8-V Power
Supplies for AMPS/NADC and GSM
Applications Respectively
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND
GND
RFIN
GND
NC
VPC
GND
NC
GND
GND
RFOUT
GND
GND
Unconditionally Stable
Wide UHF Frequency Range
800 MHz to 1000 MHz
21 dBm and 23 dBm Typical Output Power
in AMPS/NADC and GSM Applications
Respectively
TXEN
GND
V
V
CC
CC
Linear Ramp Control
V
BB
GND
GND
Transmit Enable/Disable Control
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
NC – No internal connection
Efficiency, and Highly Linear Operation
Minimum of External Components
Required for Operation
Surface-Mount Thermally Enhanced
Package for Extremely Small Circuit
Footprint
description
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication
applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time
division multiple access) applications. Very few external components are required for operation.
The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section
of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of
RFOUT is approximately 50
Ω.
But, since RFOUT is connected to an open-collector output device, minimal
external matching is required.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to
3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate
for the application:
21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular)
operation
23 dBm typical for GSM (Global System for Mobile Communications) operation
Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically
greater than 50 dB.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
T
e
xas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1997,
T
e
xas Instruments Incorporated
PRODUCTION D
A
TA
i
nformation is current as of publication date.
Products conform to specifications per the terms of
T
e
xas
I
n
struments
standard
w
a
rrant
y
. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
description (continued)
The TRF8010 is available in a small, surface-mount, thermally enhanced TSSOP 20-pin PWP (PowerPAD
)
package and is characterized for operation from
–
4
0
°
C to 85
°
C. The PWP package has a solderable pad that
can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also
acts as a low-inductance electrical path to ground and, for the TRF8010, must be electrically connected to the
PCB ground plane as a continuation of the regular package terminals that are designated GND.
functional block diagram
3
18
RFIN
RFOUT
15
6
Bias/Band Gap
Reference
TXEN
VPC
Linear Ramp
Control
9
12, 13
V
V
CC
BB
Terminal Functions
TERMINAL
NO.
I/O
DESCRIPTION
NAME
GND
1, 2, 4, 7, 10, 11,
14, 16, 17, 19, 20
Analo
g
g
roun
d
f
o
r
a
l
l
i
nterna
l
a
nalo
g
c
ircuits
.
A
l
l
s
ignal
s
a
r
e
r
eference
d
t
o
t
h
e
g
roun
d
t
erminals.
NC
5, 8
3
No connection. It is recommended that all NC terminals be connected to ground.
RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFIN
RFOUT
I
18
O
RF output. RFOUT is an open-collector output and requires a decoupled connection to V
for operation.
CC
TXEN
15
9
I
I
Transmit enable input (digital). When TXEN is high, the output device is enabled.
V
V
Control section supply voltage.
First stage bias.
BB
12, 13
6
CC
VPC
Voltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from
a typical value of –54 dBm to the maximum output power appropriate for the application.
PowerPAD is a trademark of
T
e
xas Instruments Incorporated.
2
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
0
.6 V to 5.6 V
CC
Input voltage range at TXEN, VPC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
0
.6 V to 5.6 V
Input power at RFIN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 dBm
Thermal resistance, junction to case, R
Thermal resistance, junction to ambient, R
(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5
°
C/W
θ
JC
(see Note 3)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32
°
C/W
θ
JA
Continuous total power dissipation at T
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9 W
A
Operating junction temperature, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
°
C
J
Junction temperature, T
max .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
°
C
J
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40
°
C to 85
°
C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
C to 100
°
C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1.
Voltage values are with respect to GND.
2. No
air flow and with infinite heatsink
3. With
the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane on an FR4 board with no air flow
recommended operating conditions
MIN
NOM
MAX
UNIT
V
Supply voltage, V
CC
(see Note 1)
3
5
High-level input voltage at TXEN, V
IH
V
CC
–
0
.8
V
Low-level input voltage at TXEN, V
IL
0.8
85
V
Operating free-air temperature, T
–
4
0
°
C
A
NOTE 1:
Voltage values are with respect to GND.
electrical characteristics over full range of operating conditions
supply current, V
= 3.6 V
CC
‡
PARAMETER
Operating at maximum power out
Operating at minimum power out
TEST CONDITIONS
MIN TYP
MAX
UNIT
mA
TXEN high, VPC = 3 V
TXEN high, VPC = 0 V
163
I
Supply current from V
CC
CC
7
mA
‡
Typical values are at T
= 25
C.
A
supply current, V
= 4.8 V
CC
‡
PARAMETER
TEST CONDITIONS
TXEN high, VPC = 3 V
TXEN high, VPC = 0 V
TXEN low, VPC = 0 V
MIN TYP
MAX
UNIT
mA
Operating at maximum power out
Operating at minimum power out
Power down
155
7
210
I
Supply current from V
CC
mA
CC
0.05
mA
‡
Typical values are at T
= 25
C.
A
3
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
AMPS/NADC operation, V
= 3.6 V, TXEN high, VPC = 3 V, T
= 25
°
C (unless otherwise noted)
A
CC
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Operating frequency range
824
849
MHz
P =
0 dBm
21
–58
27
I
P
O
Output power
dBm
dB
P =
0 dBm
VPC = 0 V
I
Gain (small signal)
P =
–
2
0 dBm
I
Power added efficiency (PAE)
P =
0 dBm
28%
11
I
Input return loss (internally matched)
Output return loss (externally matched, small signal)
Noise power in 30 kHz bandwidth
P =
–
2
0 dBm
I
dB
dB
P =
–
2
0 dBm
I
11
45 MHz offset at P
= 0 dBm
–
9
7
–
2
0
–
5
0
dBm
I
2f
3f
0
Harmonics
P =
0 dBm
I
dBc
0
GSM operation, V
= 4.8 V, TXEN high, VPC = 3 V, T
= 25
°
C (unless otherwise noted)
A
CC
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
925
UNIT
Extended GSM operating frequency range
870
MHz
P =
0 dBm
21.5
23
–
5
4
28
24.5
I
P
O
Output power
dBm
dB
P =
0 dBm
VPC = 0 V
I
Gain (small signal)
P =
–
2
0 dBm
I
Power added efficiency (PAE)
P =
0 dBm
29%
11
I
Input return loss (internally matched)
Output return loss (externally matched, small signal)
P =
–
2
0 dBm
I
dB
dB
P =
–20 dBm
I
11
2f
3f
–
2
8
–
4
0
–
9
5
–
9
6
–
2
2
–
3
5
0
Harmonics
P =
0 dBm
dBc
I
0
20 MHz above f
10 MHz above f
0
Noise power in 30 kHz bandwidth
P =
0 dBm
I
dBm
0
stability, AMPS/NADC and GSM operation
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
†
Output VSWR
< 6:1 all phases,
Stability
‡
V
P
< 5.6
V
,
P =
0 dBm,
I
CC
≤
22 dBm,
Output frequency band: 200 MHz – 1200 MHz
O
†
‡
VSWR = voltage standing wave ratio
No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
AMPS/NADC and GSM operation, V
= 3.6 V or 4.8 V, T
= 25
°
C
A
CC
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
µ
s
t
t
Switching time, RF output OFF to ON
Switching time, RF output ON to OFF
TXEN = high, VPC stepped from 0 V to 3 V
TXEN = high, VPC stepped from 3 V to 0 V
1
1
on
µ
s
off
4
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
TYPICAL CHARACTERISTICS
POWER ADDED EFFICIENCY
OUTPUT POWER
vs
INPUT POWER
vs
INPUT POWER
35
25
20
V
= 4.8 V
V
= 4.8 V
25
°
C
CC
CC
VPC = 3 V
VPC = 3 V
Freq = 900 MHz
30
Freq = 900 MHz
85
°
C
25
°
C
25
20
15
–40
°
C/25
°
C
–40
°
C
85
°
C
15
10
5
10
5
0
–20
–15
–10
–5
0
5
–20
–15
–10
–5
0
5
P –
Input Power – dBm
I
P –
Input Power – dBm
I
Figure 1
Figure 2
OUTPUT POWER AND POWER
ADDED EFFICIENCY
vs
FREQUENCY
34
32
30
23
22.5
22
25
°
C
85
°
C
–40
°
C
–40
°
C
21.5
21
28
26
25
°
C
85
°
C
V
= 4.8 V
CC
VPC = 3 V
P =
0 dBm
24
22
20.5
20
P
O
I
PAE
860 870 880 890 900 910 920 930 940
f – Frequency – MHz
Figure 3
5
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
TYPICAL CHARACTERISTICS
OUTPUT POWER
vs
VPC GAIN CONTROL RANGE
OUTPUT POWER
vs
SUPPLY VOLTAGE
30
20
10
0
23
22
21
P =
0 dBm
I
3.6 V
AMPS/NADC
Application Circuit
VPC = 3 V
Freq = 836 MHz
R1 = 0
Ω
V
CC
= 4.8 V
Freq = 900 MHz
85
°
C
25
°
C
4.8 V
GSM Application
Circuit
VPC = 3 V
Freq = 900 MHz
R1 = 180
Ω
–10
–20
–30
–40
20
19
18
–40
°
C
–50
–60
0
0.5
1
1.5
2
2.5
3
3
3.5
4
4.5
5
VPC – Power Control Input – V
V
CC
– Supply Voltage – V
Figure 4
Figure 5
INPUT RETURN LOSS
vs
FREQUENCY
9
9.5
10
V
= 4.8 V
CC
VPC = 3 V
P =
–20 dBm
I
85
°
C
25
°
C
10.5
11
–40
°
C
11.5
12
860 870 880 890 900 910 920 930 940
f – Frequency – MHz
Figure 6
6
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
APPLICATION INFORMATION
A typical application example for AMPS/NADC cellular telephone systems is shown in Figure 7.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in
T
a
ble 1.
Board Material:
Type FR4,
ε
r
= 4.3, h = 12 mils
20
1
GND
GND
19
18
17
2
3
4
5
50
Ω
line,
w = 20 mils
GND
RFIN
GND
GND
RFOUT
GND
50
Ω
line,
w = 20 mils
RF OUTPUT
RF INPUT
C2
L1
50
Ω
line,
w = 20 mils
C1
L2
16
15
14
13
GND
NC
TRF8010
6
7
VPC
GND
NC
TXEN
GND
l = 220 mils,
w = 20 mils
8
V
CC
C3
12
11
9
V
V
CC
BB
10
GND
GND
C4
V
CC
Figure 7. Typical AMPS/NADC Cellular Telephone Application
Table 1. External Component Selection (AMPS/NADC)
COMPONENT
DESIGNATION
TYPICAL VALUE
FUNCTION
(AMPS/NADC)
C1
C2
C3
C4
L1
L2
3.3 pF
100 pF
100 pF
1000 pF
5.7 nH
100 nH
Output impedance matching capacitor
DC-blocking capacitor for RF output
Matching capacitor
Power supply decoupling capacitor
Output impedance matching inductor
DC bias/RF choke
7
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
APPLICATION INFORMATION
A typical application example for GSM cellular telephone systems is shown in Figure 8.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in
T
a
ble 2.
Board Material:
Type FR4,
ε
r
= 4.3, h = 12 mils
20
1
GND
GND
19
18
17
2
3
4
5
50
Ω
line,
w = 20 mils
GND
RFIN
GND
GND
RFOUT
GND
50
Ω
line,
w = 20 mils
RF OUTPUT
RF INPUT
C2
L1
50
Ω
line,
w = 20 mils
C1
L2
16
15
14
13
GND
NC
TRF8010
6
7
VPC
GND
NC
TXEN
GND
l = 220 mils,
w = 20 mils
8
V
CC
C3
12
11
9
V
V
CC
BB
R1
10
GND
GND
C4
V
CC
Figure 8. Typical GSM Cellular Telephone Application
Table 2. External Component Selection (GSM)
COMPONENT
DESIGNATION
TYPICAL VALUE
FUNCTION
(GSM)
C1
C2
C3
C4
L1
3.3 pF
100 pF
100 pF
1000 pF
6.8 nH
100 nH
180
Ω
Output impedance matching capacitor
DC-blocking capacitor for RF output
Matching capacitor
Power supply decoupling capacitor
Output impedance matching inductor
DC bias/RF choke
L2
R1
Bias supply resistor
8
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TRF8010
900-
M
Hz
R
F TRAN
S
M
I
T DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC
SMALL-OUTLINE PACKAGE
0,30
0,19
M
0,65
20
0,10
Thermal Pad (3,18
(see Note C)
2,41 NOM)
11
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
10
0
°
–
8
°
A
0,75
0,50
Seating Plane
0,10
0,15
0,05
1,20 MAX
PINS **
14
16
20
24
28
DIM
5,10
4,90
5,10
4,90
6,60
6,40
7,90
7,70
9,80
9,60
A MAX
A MIN
4073225/E 03/97
NOTES: A. All
linear dimensions are in millimeters.
B. This
drawing is subject to change without notice.
C. The
package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad
is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20.
PowerPAD is a trademark of
T
e
xas Instruments Incorporated.
9
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
IMPORTANT NOTICE
T
e
xas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty.
T
e
sting and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJUR
Y
,
O
R SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998,
T
e
xas Instruments Incorporated
