Tokmas-CIM3N150D3

CIM3N150D3  

1500V

N

N

–

C

hannel MOSFET  

General Description  

This Power MOSFET is produced using advanced  

self-aligned planar

 

technology. This advanced  

technology has

 

been especially tailored to minimize  

on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode.  

G

D

S

TO-247-3  

These devices can be used in

various power switching  

circuit for system miniaturization and higher efficiency.  

Features  

3A, 1500V, R

DS

(on)typ. = 5

Ω@VGS = 10 V

Id=1.5A  

Low gate charge (typical9.3nC)  

Low gate charge (typical2.4pf)  

Fast switching  

100% avalanche tested  

Absolute Maximum Ratings

T

C

= 25

℃

unless otherwise noted  

Symbol  

Parameter  

Units  

V

CIM3N150D3  

V

DSS  

Drain

–

Source Voltage  

1500  

3

A

Continuous ( T

C

= 25

℃

)  

Continuous ( T

C

= 100

℃

)  

I

D  

Drain Current  

1.8  

A

I

DM  

V

GSS  

Drain Current

 

– Pulsed  

( Note 1 )  

12  

A

Gate

–

Source Voltage  

±30  

V

EAS  

Single Pulsed Avalanche Energy  

Peak Diode Recovery dv/dt  

( Note 2 )  

( Note 3 )  

225  

mJ  

V/ns  

W

dv/dt  

P

D  

5

83  

Power Dissipation ( T

C

= 25

℃

)  

Operating and Storage Temperature Range  

T

J

,T

STG  

-55 to +150  

℃

Maximum lead temperature for soldering purposes  

T

L  

300  

℃

1/8” frome case for 5 seconds  

*Drain current limited by maximum junction temperature.  

Thermal characteristics  

Symbol  

R

θJC  

Parameter  

CIM3N150D3  

Units  

℃

/W  

℃

/W  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

1.5  

50  

R

θJA  

Electrical Characteristics

T

C

= 25

℃

unless otherwise noted  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

1500V N-

C

hannel

 

MOSFET  

CIM3N150D3  

Off Characteristics  

BV

DSS  

⊿

BV

DSS

/  

⊿

T

J  

Drain

–

Source Breakdown Voltage  

Breakdown Voltage Temperature  

Coefficient  

V

GS

= 0 V, I

D

= 250 uA  

I

D

= 250 uA, Referenced to  

25

℃  

1500  

—  

—  

—  

—  

V

1.3  

V/

℃  

V

DS

= 1500 V, V

GS

= 0 V  

V

DS

= 1200 V, Tc = 125

℃  

V

GS

= 30 V, V

GS

= 0 V  

V

GS

= -30 V, V

GS

= 0 V  

—  

—  

—  

—  

—  

—  

—  

—  

25  

uA  

uA  

nA  

nA  

I

DSS  

Zero Gate Voltage Drain Current  

500  

100  

-100  

I

GSSF  

I

GSSR  

Gate-Body Leakage Current, Forward  

Gate-Body Leakage Current, Reverse  

On Characteristics  

V

GS(th)  

R

DS(on)  

Gate Threshold Voltage  

Static Drain-Source on-Resistance  

V

DS

= V

GS

, I

D

= 250 uA  

V

GS

= 10 V, I

D

= 1.5A  

V

DS

= 30 V, I

D

= 1.5 A ( Note  

4 )  

3.0  

—  

—  

5

5.0  

8

V

Ω

g

FS  

Forward Transconductance  

—  

4.5  

—  

S

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Rg  

Input Capacitance  

—  

—  

—  

1938  

104  

2.4  

—  

—  

—  

pF  

pF  

pF  

Ω

V

DS

= 25 V, V

GS

= 0 V,

 

f =  

1.0 MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

F= 1.0 MHz  

3.5  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Q

g  

Q

gs  

Q

gd  

Turn-On Delay Time  

—  

—  

—  

—  

—  

—  

—  

34  

17  

56  

27  

9.3  

15  

5.3  

—  

—  

—  

—  

—  

—  

—  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

V

DS

= 750 V, I

D

= 3.0 A , R

G

=  

10

Ω

, V

GS

= 10 V

 

(Note 4,5 )  

V

DS

= 750 V, I

D

= 3.0 A V

GS

=  

10 V

 

(Note 4,5 )  

Drain

–

Source Diode Characteristics and Maximum Ratings  

I

S  

Maximum Continuous Drain-Source Diode Forward Current  

Maximum Pulsed Drain-Source Diode Forward Current  

—  

—  

—  

—  

—  

—  

—  

3

12  

1.5  

—  

A

A

V

I

SM  

V

SD  

t

rr  

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

V

GS

= 0 V, I

S

= 3.0 A  

V

GS

= 0 V, I

S

= 3.0 A  

dI

F

/dt = 100 A/us

 

( Note  

4 )  

302  

ns  

Q

rr  

Reverse Recovery Charge  

—  

10  

—  

uC  

Notes:  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature  

2. L

 

= 10.0mH , I

AS

= 6.7A, R

G

= 25Ω, Starting T

J

= 25

℃  

3. I

SD

≤

3.0A, di/dt

≤

100A/us, V

DD

≤

BV

DSS

, Starting T

J

= 25°C  

4. Pulsed

 

Test : Pulsed width

≤300us, Duty cycle ≤ 2%  

5. Essentially

 

independent of operating temperature  

CIM3N150D3  

1500V N-

C

hannel

 

MOSFET  

Gate Charge Test Circuit & Waveform  

Resistive Switching Test Circuit & Waveforms  

Unclamped Inductive Switching Test Circuit & Waveforms  

CIM3N150D3  

1500V N-

C

hannel

 

MOSFET  

Peak Diode Recovery dv/dt Test Circuit & Waveforms  

CIM3N150D3  

1500V N-

C

hannel

 

MOSFET  

Package Dimensions  

Inches  

Millimeters  

POS  

Package TO-247-3  

Min  

.190  

.090  

.075  

.042  

.075  

.075  

.113  

.113  

.022  

.819  

.640  

.037  

.620  

.516  

.145  

.039  

.487  

Max  

.205  

.100  

.085  

.052  

.095  

.085  

.133  

.123  

.027  

.831  

.695  

.049  

.635  

.557  

.201  

.075  

.529  

Min  

4.83  

2.29  

1.91  

1.07  

1.91  

1.91  

2.87  

2.87  

0.55  

20.80  

16.25  

0.95  

15.75  

13.10  

3.68  

1.00  

12.38  

Max  

5.21  

2.54  

2.16  

1.33  

2.41  

2.16  

3.38  

3.13  

0.68  

21.10  

17.65  

1.25  

16.13  

14.15  

5.10  

1.90  

13.43  

A

A1  

A2  

b

b1  

b2  

b3  

b4  

c

D

D1  

D2  

E

E1  

E2  

E3  

E4  

e

.214 BSC  

3

5.44 BSC  

N

3

L

.780  

.800  

.173  

.144  

.236  

.248  

11˚  

11˚  

8˚  

19.81  

4.10  

3.51  

5.49  

6.04  

9˚  

20.32  

4.40  

3.65  

6.00  

6.30  

11˚  

11˚  

8˚  

Pinout Information:  

T

U

L1  

ØP  

Q

.161  

.138  

.216  

.238  

9˚  

•ꢀ

Pin 1 = Gate  

•ꢀ

Pin 2, 4 = Drain  

S

•ꢀ

Pin 3 = Source  

V

W

T

U

9˚  

9˚  

V

2˚  

2˚  

W

2˚  

8˚  

2˚  

8˚