Tokmas-FDS4435
| Part # | Tokmas-FDS4435 |
Download  | Tokmas-FDS4435 |
FDS4435
Silicon N-Channel Power MOSFET
V
DSS
I
D
-30
-12
3.0
11
V
A
Features
：
R
DS(ON)
<14
mΩ @ V
GS
=10V (Typ11
mΩ)
High density cell design for ultra low R
dson
P
D
W
R
DS(ON)type
m
Ω
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
SOP-8
Applications
：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute
（
T
c
= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
Parameter
Rating
Units
Drain-to-Source Voltage
Continuous Drain Current
-30
-12
-10
-48
±
20
140
5.0
V
A
I
D
Continuous Drain Current T
C
= 70 °C
Pulsed Drain Current
Gate-to-Source Voltage
L=0.5mH
A
a1
I
DM
A
V
GS
Eas
a5
V
mJ
V/ns
W
dv/dt
a3
Peak Diode Recovery dv/dt
P
D
T
J
，
T
stg
T
L
Power Dissipation
3.0
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
150
，
–
55 to 150
℃
℃
300
FDS4435
Silicon N-Channel Power MOSFET
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Min. Typ. Max.
Symbol
Parameter
T
e
st Conditions
Units
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0
V
,
I
D
=250
µ
A
-30
—
—
—
—
—
—
V
µ
A
µ
A
I
DSS
Drain to Source Leakage Current
V
DS
=-30
V
,
V
GS
= 0
V
,
T
a
=25
℃
V
GS
=+20V
1.0
0.1
I
GSS(F)
Gate to Source Forward Leakage
I
GSS(R)
Gate to Source Reverse Leakage
—
V
GS
=-20V
—
-0.1
µ
A
ON Characteristics
a
3
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS(TH)
Gate Threshold Voltage
Pulse width tp
≤
38
0µs,δ≤
2%
V
GS
=-10
V
,
I
D
=-10A
—
11
—
14
m
Ω
V
DS
=V
GS
,I
D
=
250µA
-1
-3.0
V
Dynamic Characteristics
a4
Rating
Symbol
Parameter
T
e
st Conditions
V
DS
=-5
V
,
I
D
=-10A
Units
S
Min. Typ. Max.
20 — —
— 1800 —
g
fs
C
iss
C
oss
C
rss
Forward
T
r
ansconductance
Input Capacitance
V
GS
=0
V
,
V
DS
=-15V
f=1.0MHz
Output Capacitance
—
—
220
180
—
—
pF
Reverse Transfer Capacitance
Resistive Switching Characteristics
a4
Symbol
Parameter
Rating
T
e
st Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
Turn-on Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
—
—
—
—
—
—
—
10
9
—
—
—
—
—
—
—
V
DD
=-15
V
,
I
D
=-10A
V
GS
=-10
V
,
R
G
=3
Ω
26
11
25
4.0
6
t
f
Fall Time
Q
g
T
o
tal Gate Charge
V
DD
=-15
V
,
I
D
=-10A
V
GS
=-10V
Q
gs
Q
gd
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
nC
FDS4435
Silicon N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Min. Typ. Max.
Symbol
Parameter
Continuous Source Current
a2
(Body Diode)
T
e
st Conditions
Units
I
S
V
SD
t
rr
—
—
—
—
—
-12
-1.5
—
A
V
Diode Forward Voltage
a3
I
S
=-12A,V
GS
=0V
Reverse Recovery Time
I
S
=-12A,T
j
= 25
°
C
38
ns
dI
F
/dt=100A/us,
V
GS
=0V
Q
rr
Reverse Recovery Charge
—
30
—
nC
Symbol
R
θ
JC
Parameter
Typ.
41.7
Units
Junction-to-Case
a2
℃
/W
a1
：
Repetitive Rating: Pulse width limited by maximum junction temperature.
a2
：
Surface Mounted on FR4 Board, t
≤
10sec.
a3
：
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
a4
：
Guaranteed by design, not subject to production
a5
：
T
J
=25
℃
, V
D
D
=15V, V
G
=10V,L=0.5Mh
