Tokmas-IXTY01N100
| Part # | Tokmas-IXTY01N100 |
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IXTY01N100
CI5930-30A
Silicon N-Channel Power MOSFET
Features
：
V
DSS
1000
0.5
25
V
A
I
D
Fast Switching
Low ON Resistance(R
dson
≤
55
Ω)
W
Ω
P
D
(T
C
=25
℃
)
R
DS(ON).TYPE
40
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
TO-252
Applications:
Power switch circuit of adaptor and charger
Absolute
（
T
c
=25
℃
unless otherwise specified
）
：
Symbol
Parameter
Rating
Units
V
DSS
Drain-to-Source Voltage
1000
0.5
0.17
1.5
±
30
12
V
A
Continuous Drain Current
I
D
Continuous Drain Current T
C
=100 °C
A
a1
I
DM
Pulsed Drain Current
A
V
GS
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
V
a2
E
As
E
Ar
I
AR
mJ
mJ
A
a1
a1
4
0.3
5.0
25
dv/dt
a3
Peak Diode Recovery dv/dt
V/ns
W
℃
℃
P
D
Power Dissipation
T
J
，
T
stg
Operating Junction and Storage Temperature Range
150
，
–
55 to 150
T
L
Maximum Temperature for Soldering
300
Caution Stresses greater than those in the
“
Absolute Maximum Ratings
”
may cause permanent damage to the device
IXTY01N100
CI5930-30A
Silicon N-Channel Power MOSFET
Thermal Characteristics
Symbol
Parameter
Rating
5.0
Units
℃
/ W
℃
/ W
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
100
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Symbol
V
DSS
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
1000 —
—
— 0.51
—
Drain to Source Breakdown Voltag
e
V
GS
=0
V
,
I
D
=250
µ
A
I
D
=250uA,Reference25
℃
V
Δ
BV
DSS
/ΔT
J
Bvdss
T
e
mperature Coefficient
V/
℃
V
DS
=1000
V
,
V
GS
=0
V
,
T
a
=25
℃
—
V
DS
=800
V
,
V
GS
=0
V
,
T
a
=125
℃
—
—
—
1
I
DSS
Drain to Source Leakage Current
µ
A
100
100
I
GSS(F)
I
GSS(R)
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
—
—
—
—
nA
-100 nA
ON Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
R
DS(ON)
V
GS(TH)
g
fs
Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS
=10
V
,
I
D
=0.25A
V
DS
=V
GS
,I
D
=
250µA
V
DS
=15
V
,
I
D
=0.25A
—
2.0
—
—
—
55
4.0
—
Ω
V
S
Forward
T
r
ans conductance
0.42
Pu
lse width<380μs; duty cycle<
2%.
Dynamic Characteristics
Rating
Symbol
Parameter
Input Capacitance
T
e
st Conditions
Units
pF
Min. Typ. Max.
C
iss
C
oss
C
rss
—
—
—
70
14.5
2.8
—
—
—
V
GS
=0V V
DS
=25V
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Resistive Switching Characteristics
Rating
Symbol
Parameter
Turn-on Delay Time
T
e
st Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
t
r
t
d(OFF)
t
f
—
—
—
—
—
—
—
19
11.5
48
—
—
—
—
—
—
—
Rise Time
I
D
=0.5A,V
DD
=500V
V
GS
=10
V
,
R
g
=4.7
Ω
Turn-Off Delay Time
Fall Time
16.5
10.0
0.7
Q
g
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
I
D
=0.5A,V
DD
=500V
V
GS
=10V
Q
gs
Q
gd
nC
7.2
IXTY01N100
CI5930-30A
Silicon N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Min. Typ. Max.
Symbol
Parameter
T
e
st Conditions
Units
I
SD
I
SM
V
SD
t
rr
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
—
—
—
—
—
—
—
0.5
1.5
1.5
—
A
A
I
S
=0.5A,V
GS
=0V
—
V
Reverse Recovery Time
374
735
ns
μ
C
I
S
=0.5A,T
j
=25
℃
Q
rr
Reverse Recovery Charge
—
dI
F
/dt=100A/
μ
s,V
GS
=0V
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10mH, I
D
=1.5A, Start T
J
=25
℃
a3
：
I
SD
=0.5A,di/dt
≤
100A/us,V
D
D
≤
BV
D
S
, Start T
J
=25
℃
