Tokmas-STD3NK90ZT4
| Part # | Tokmas-STD3NK90ZT4 |
Download  | Tokmas-STD3NK90ZT4 |
Silicon
N
–
Channel Power MOSFET
STD3NK90ZT4
Features
：
V
DSS
900
4
V
A
I
D
Fast Switching
Low Gate Charge and R
dson
P
D
(T
C
=
25
℃
)
75
3.5
W
Ω
R
DS(ON)type
Low Reverse transfer capacitances
TO-252
100% Single Pulse avalanche energy
T
est
Applications
：
Power switch circuit of adaptor and charge
r
.
Absolute
（
Tc= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
P
a
rameter
Drain-to-Source
V
oltage
Rating
Units
V
A
900
4
Continuous Drain Current
Continuous Drain Current T
C
=
1
00
°C
Pulsed Drain Current
I
D
A
2.4
16
a1
I
DM
A
V
GS
Gate-to-Source Voltage
±
30
250
10
V
a2
E
AS
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
mJ
mJ
A
a1
E
AR
a1
I
A
R
1.4
5.0
75
dv/dt
a
3
Peak Diode Recovery dv/dt
V/ns
W
P
o
wer Dissipation
P
D
Derating Factor above 25
°C
0.6
W/
℃
T
J
，
T
s
tg
Operating Junction and Storage Temperature Range
T
L
Maximum Temperature for Soldering
150
，–
55 to 150
℃
℃
300
Silicon
N
–
Channel Power MOSFET
STD3NK90ZT4
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Min. Typ. Max.
Symbol
V
DSS
P
a
rameter
Te
s
t Conditions
Units
Drain to Source Breakdown Voltage V
GS
=0
V
,
I
D
=250
µ
A
900 —
—
—
V
Δ
BV
D
SS
/
Δ
T
J
Bvdss
T
e
mperature Coefficient
I
D
=
250uA,Reference25
℃
V
DS
=
900
V
,V
GS
=
0
V
,
T
a
=25
℃
—
—
1.5
V/
℃
—
—
10
µ
A
I
DSS
Drain to Source Leakage Current
V
DS
=
720
V
,V
GS
=0
V
,
T
a
=125
℃
—
250
100
nA
I
GSS(F)
I
GSS(R)
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
—
—
—
—
100 nA
ON Characteristics
Rating
Symbol
P
a
rameter
Te
s
t Conditions
Units
Min. Typ. Max.
— 3.5
4.0
R
DS(ON)
V
GS(TH)
Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS
=10
V
,
I
D
=
2.0A
Ω
V
DS
=
V
GS
,I
D
=
2
50µA
2.0 3.0 4.0
V
Pulse width tp
≤
38
0µs,δ≤
2
%
Dynamic Characteristics
Rating
Symbol
P
a
rameter
Te
s
t Conditions
V
DS
=
15
V
,
I
D
=2.0A
Units
S
Min. Typ. Max.
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
—
—
—
—
4.5
840
72
—
—
—
—
V
GS
=0
V
,V
DS
=25V
f=1.0MHz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
23
Resistive Switching Characteristics
Rating
Symbol
P
a
rameter
Tu
r
n-on Delay Time
Te
s
t Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
t
r
t
d(OFF)
t
f
—
—
—
—
—
—
—
17
6
—
—
—
—
—
—
—
Rise Time
I
D
=
4.0A,V
DD
=450V
V
GS
=10
V
,
R
G
=12
Ω
Tu
r
n-Off Delay Time
Fall Time
26
17
17
4.5
5.6
Q
g
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
I
D
=
4.0A,V
DD
=450V
V
GS
=10V
Q
g
s
Q
g
d
nC
Silicon
N
–
Channel Power MOSFET
STD3NK90ZT4
Source-Drain Diode Characteristics
Rating
Min. Typ. Max.
Symbol
P
a
rameter
Te
s
t Conditions
Units
I
S
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
oltage
—
—
—
—
—
—
4
A
A
I
SM
V
SD
t
rr
16
1.5
—
I
S
=
4.0A,V
GS
=0V
—
V
Reverse Recovery Time
230
ns
uC
I
S
=
4.0A,T
j
=
2
5
°
C
dI
F
/
dt=100A/us,V
GS
=0V
Q
rr
Reverse Recovery Charge
— 0.98 —
Pulse width tp
≤
38
0µs,δ≤
2
%
Symbol
P
a
rameter
Typ.
Units
R
θ
J
C
R
θ
JA
Junction-to-Case
1.67
83.3
℃
/
W
℃
/
W
Junction-to-Ambient
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10.0mH, I
D
=
6.0A, Start T
J
=
25
℃
a3
：
I
SD
=
4.0A,di/dt
≤
100A/us,V
D
D
≤
BV
D
S,
Start T
J
=
25
℃
