Tokmas-STFW3N150F
| Part # | Tokmas-STFW3N150F |
Download  | Tokmas-STFW3N150F |
1500V
N
N
–
C
hannel MOSFET
STW3N150F
Features
3A, 1500V, R
DS
(on)typ. = 5
Ω@VGS = 10 V
Id=1.5A
Low gate charge (typical 37nC)
Low reverse transfer capacitance (typical2.8pf)
Fast switching
100% avalanche tested
TO- 3PF
Absolute Maximum Ratings
T
C
= 25
℃
unless otherwise noted
Symbol
Parameter
CIM3N150
Units
V
V
DSS
Drain
–
Source Voltage
1500
3
A
Continuous ( T
C
= 25
℃
)
Continuous ( T
C
= 100
℃
)
I
D
Drain Current
1.8
A
I
DM
V
GSS
Drain Current
– Pulsed
( Note 1 )
12
A
Gate
–
Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
( Note 2 )
( Note 3 )
225
mJ
V/ns
W
dv/dt
P
D
5
32
Power Dissipation ( T
C
= 25
℃
)
Operating and Storage Temperature Range
T
J
,T
STG
-55 to +150
℃
Maximum lead temperature for soldering purposes
T
L
300
℃
1/8” frome case for 5 seconds
*Drain current limited by maximum junction temperature.
Thermal characteristics
CIM3N150
Symbol
R
θJC
Parameter
Units
℃
/W
℃
/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3.8
40
R
θJA
STW3N150F
1500V
N
N
–
C
hannel MOSFET
Electrical Characteristics
T
C
= 25
℃
unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
⊿
BV
DSS
/
⊿
T
J
Drain
–
Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V
GS
= 0 V, I
D
= 250 uA
I
D
= 250 uA, Referenced to
25
℃
1500
—
—
—
—
V
1.5
V/
℃
V
DS
= 1500 V, V
GS
= 0 V
V
DS
= 1200 V, Tc = 125
℃
V
GS
= 30 V, V
GS
= 0 V
V
GS
= -30 V, V
GS
= 0 V
—
—
—
—
—
—
—
—
25
uA
uA
nA
nA
I
DSS
Zero Gate Voltage Drain Current
500
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage ( Note 4 )
Static Drain-Source on-Resistance ( Note 4 )
V
GS
= 10 V, I
D
= 1.5A
Forward Transconductance ( Note 4 )
V
DS
= V
GS
, I
D
= 250 uA
3.0
—
—
—
5
4.5
5.0
8
—
V
Ω
S
V
DS
= 30 V, I
D
= 1.5 A
Dynamic Characteristics
C
iss
C
oss
C
rss
Rg
Input Capacitance
—
—
—
1938
104
2.8
—
—
—
pF
pF
pF
Ω
V
DS
= 25 V, V
GS
= 0 V,
f =
1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
F= 1.0 MHz
4.0
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
—
—
—
—
—
—
—
35
19
56
30
37
10
14
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 750 V, I
D
= 3.0 A , R
G
=
10
Ω
, V
GS
= 10 V
(Note 4,5 )
V
DS
= 750 V, I
D
= 3.0 A V
GS
=
10 V
(Note 4,5 )
Drain
–
Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
3
12
1.5
—
A
A
V
I
SM
V
SD
t
rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 3.0 A
V
GS
= 0 V, I
S
= 3.0 A
dI
F
/dt = 100 A/us
( Note
4 )
880
ns
Q
rr
Reverse Recovery Charge
—
6.5
—
uC
Notes:
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature
2. L
= 10.0mH , I
AS
= 6.7A, R
G
= 25Ω, Starting T
J
= 25
℃
3. I
SD
≤
3.0A, di/dt
≤
100A/us, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulsed
Test : Pulsed width
≤300us, Duty cycle ≤ 2%
5. Essentially
independent of operating temperature
1500V
N
N
–
C
hannel MOSFET
STW3N150F
Characteristics Curve
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 2 Maximum Power dissipation vs Case
Temperature
Figure 3 Maximum Continuous Drain Current vs Case
Temperature
Figure 4 Typical Output Characteristics
Figure 5 Typical Transfer Characteristics
Figure 6 Typical Body Diode Transfer Characteristics
1500V
N
N
–
C
hannel MOSFET
STW3N150F
Characteristics Curve
Figure 7 Typical Drain to Source ON Resistance vs Drain
Current
Figure 8 Typical Drian to Source on Resistance vs
Junction Temperature
Figure 9 Typical Theshold Voltage vs Junction
Temperature
Figure 10 Typical Breakdown Voltage vs Junction
Temperature
Figure 11 Typical Capacitance vs Drain to Source Voltage
Figure 12 Typical Gate Charge vs Gate to Source Voltage
STW3N150F
1500V
N
N
–
C
hannel MOSFET
Figure 13 Maximum Effective Thermal Impedance , Junction to Case
1500V
N
N
–
C
hannel MOSFET
STW3N150F
Test Circuit & Waveform
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
1500V
N
N
–
C
hannel MOSFET
STW3N150F
Test Circuit & Waveform
Peak Diode Recovery dv/dt Test Circuit & Waveforms
STW3N150F
1500V
N
N
–
C
hannel MOSFET
Package Information
单位
mm
Symbol
Min
5.35
2.80
1.90
1.10
0.65
1.80
1.80
0.70
5.25
15.3
9.80
3.80
24.3
9.00
15.1
18.5
1.80
4.80
4.3
Max
5.75
3.20
2.30
1.50
0.85
2.20
2.20
1.10
5.65
15.7
10.2
4.20
24.7
9.40
15.5
19.5
2.20
5.20
4.7
Nom
5.55
3.00
2.10
1.30
0.75
2.00
2.00
0.90
5.45
15.5
10.0
4.00
24.5
9.20
15.3
19.0
2.00
5.00
4.5
A
A1
A2
A3
b
b1
b2
c
e
E
E1
E2
H
H1
H2
H3
H4
H5
G
Ф
P
3.40
3.60
3.80
