Tokmas-STP3N150F

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Features  

3A, 1500V, R

DS

(on)typ. = 5

Ω@VGS = 10 V

ID=1.5A  

Low gate charge (typical27.5nC)  

Low gate charge (typical2.4pf)  

Fast switching  

100% avalanche tested  

Absolute Maximum Ratings

T

C

= 25

℃

unless otherwise noted  

STP3N150F  

Symbol  

Parameter  

Units  

V

V

DSS  

Drain

–

Source Voltage  

1500  

3*  

A

Continuous ( T

C

= 25

℃

)  

Continuous ( T

C

= 100

℃

)  

I

D  

Drain Current  

1.8  

A

I

DM  

V

GSS  

Drain Current

 

– Pulsed  

( Note 1 )  

12  

A

Gate

–

Source Voltage  

±30  

V

EAS  

Single Pulsed Avalanche Energy  

Peak Diode Recovery dv/dt  

( Note 2 )  

( Note 3 )  

225  

mJ  

V/ns  

W

dv/dt  

5.0  

30  

Power Dissipation ( T

C

= 25

℃

)  

-Derate above 25

℃  

P

D  

T

J

,T

STG  

T

L  

0.24  

-55 to +150  

W/

℃  

℃

Operating and Storage Temperature Range  

Maximum lead temperature for soldering purposes  

300  

℃

1/8” frome case for 5 seconds  

*Drain current limited by maximum junction temperature.  

Thermal characteristics  

STP3N150F  

Symbol  

R

θJC  

Parameter  

Units  

℃

/W  

℃

/W  

℃

/W  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Case-to-Sink Typ.  

Thermal Resistance, Junction-to-Ambient  

4.17  

—  

62.5  

R

θJS  

R

θJA  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Electrical Characteristics

T

C

= 25

℃

unless otherwise noted  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

Off Characteristics  

BV

DSS  

⊿

BV

DSS

/  

⊿

T

J  

Drain

–

Source Breakdown Voltage  

Breakdown Voltage Temperature  

Coefficient  

V

GS

= 0 V, I

D

= 250 uA  

I

D

= 250 uA, Referenced to  

25

℃  

1500  

—  

—  

—  

—  

V

1.3  

V/

℃  

V

DS

= 1500 V, V

GS

= 0 V  

V

DS

= 1200 V, Tc = 125

℃  

V

GS

= 30 V, V

GS

= 0 V  

V

GS

= -30 V, V

GS

= 0 V  

—  

—  

—  

—  

—  

—  

—  

—  

1

uA  

uA  

nA  

nA  

I

DSS  

Zero Gate Voltage Drain Current  

100  

100  

-100  

I

GSSF  

I

GSSR  

Gate-Body Leakage Current, Forward  

Gate-Body Leakage Current, Reverse  

On Characteristics  

V

GS(th)  

R

DS(on)  

Gate Threshold Voltage  

Static Drain-Source on-Resistance  

V

DS

= V

GS

, I

D

= 250 uA  

V

GS

= 10 V, I

D

= 1.5A  

V

DS

= 40 V, I

D

= 1.5A ( Note  

4 )  

3

—  

—  

5

5

8

V

Ω

g

FS  

Forward Transconductance  

—  

4.5  

—  

S

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Rg  

Input Capacitance  

—  

—  

—  

1938  

104  

2.4  

—  

—  

—  

pF  

pF  

pF  

Ω

V

DS

= 25 V, V

GS

= 0 V,

 

f =  

1.0 MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

F= 1.0 MHz  

3.5  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Q

g  

Q

gs  

Q

gd  

Turn-On Delay Time  

—  

—  

—  

—  

—  

—  

—  

34  

17  

56  

27  

27.5  

9

—  

—  

—  

—  

—  

—  

—  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

V

DS

= 750 V, I

D

= 3.0 A , R

G

=  

10

Ω

, V

GS

= 10 V

 

(Note 4,5 )  

V

DS

= 750 V, I

D

= 3.0 A V

GS

=  

10 V

 

(Note 4,5 )  

14  

Drain

–

Source Diode Characteristics and Maximum Ratings  

I

S  

Maximum Continuous Drain-Source Diode Forward Current  

Maximum Pulsed Drain-Source Diode Forward Current  

—  

—  

—  

—  

—  

—  

—  

—  

750  

6.2  

3

12  

1.55  

—  

A

A

V

ns  

uC  

I

SM  

V

SD  

t

rr  

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

V

GS

= 0 V, I

S

= 3.0 A  

V

GS

= 0 V, I

S

= 3.0 A  

Q

rr  

Reverse Recovery Charge  

dI

F

/dt = 100 A/us

 

( Note 4 )  

—  

Notes:  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature  

2. L

 

= 10.5mH , I

AS

= 3A, V

DD

= 50V,R

G

= 25

Ω, Starting T

J

= 25

℃  

3. I

SD

≤

3.0A, di/dt

≤

200A/us, V

DD

≤

BV

DSS

, Starting T

J

= 25°C  

4. Pulsed

 

Test : Pulsed width

≤300us, Duty cycle ≤ 2%  

5. Essentially

 

independent of operating temperature  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Typical Characteristics  

Figure 1. Vth Characteristics  

Figure 2. Transfer Characteristics  

Figure 3. On-Resistance Variation vs  

Drain Current  

Figure 4. Body Diode Forward Voltage  

Variation with Source Current  

and Temperature  

Figure 5. Capacitance Characteristics  

Figure 6. Gate Charge Characteristics  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Typical Characteristics  

Figure 7. Power Dissipation  

vs Temperature  

Figure 8. Maximum Safe Operating Area  

Figure 9. Maximum Drain Current  

vs Case Temperature  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Typical Characteristics  

Figure 10. Transient Thermal Response Curve  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Test Circuit & Waveform  

Gate Charge Test Circuit & Waveform  

Resistive Switching Test Circuit & Waveforms  

Unclamped Inductive Switching Test Circuit & Waveforms  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F  

Test Circuit & Waveform  

Peak Diode Recovery dv/dt Test Circuit & Waveforms  

1 5 0 0V N

–

C

hannel MOSFET  

STP3N150F