Tokmas-SUD40N10-25-E3

N-Channel Super Trench Power Mosfet  

SUD40N10-25-E3  

General Features  

●

V

DS

=100

V

,

I

D

=40A  

R

DS(ON)

=18m

Ω

(typical) @ V

GS

=10V  

R

DS(ON)

=22m

Ω

(typical) @ V

GS

=4.5V  

Schematic Diagram  

●

Excellent gate charge x R

DS(on)

product(FOM)  

●

Very low on-resistance

R

DS(on)  

●

150 °C operating temperature  

●

Pb-free lead plating  

D

●

100% UIS tested  

Application  

●

DC/DC Converter  

D

G

S

●

Ideal for high-frequency switching and synchronous  

TO-252-2L top view  

rectification  

Package Marking and Ordering Information  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

Quantity  

2500  

SUD40N10  

SUD40N10  

TO-252-2L  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Limit  

100  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

DS  

±20  

V

GS  

Drain Current-Continuous

(Silicon Limited)  

Drain Current-Continuous(T

C

=100

℃

)  

Pulsed Drain Current

(Package Limited)  

Maximum Power Dissipation  

40  

26.2  

A

I

D  

I

D

(100

℃

)  

I

DM  

A

182  

A

115  

W

P

D  

Derating factor  

Single pulse avalanche energy

(Note 5)  

0.73  

W/

℃  

mJ  

℃

E

AS  

200  

Operating Junction and Storage Temperature Range  

-55

T

o

1

75  

T

J

,T

STG  

N-Channel Super Trench Power Mosfet  

SUD40N10-25-E3  

Thermal Characteristic  

Thermal Resistance,Junction-to-Case

(Note 2)  

R

θ

JC  

1.36  

℃

/W  

Electrical Characteristics (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

V

DS

=100V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

100  

–

1

V

–

–

–

–

μ

A  

nA  

I

GSS  

±100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=10V, I

D

=20A  

V

GS

=4.5V, I

D

=20A  

V

DS

=5V,I

D

=20A  

1.2  

2.0  

18  

22  

35  

2.8  

23  

27  

–

V

–

–

–

m

Ω  

m

Ω  

S

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

C

lss  

C

oss  

C

rss  

–

–

–

1600  

139  

11  

–

–

–

PF  

PF  

PF  

V

DS

=50V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

6

2

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=50V,I

D

=20A  

V

GS

=10V,R

G

=1.6

Ω  

Turn-Off Delay Time  

18  

2

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

26  

7.4  

3.8  

V

DS

=50V,I

D

=20A,  

V

GS

=10V  

Gate-Source Charge  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

Reverse Recovery Time  

Reverse Recovery Charge  

V

SD  

I

S  

V

GS

=0V,I

S

=35A  

–

–

–

–

1.2  

35  

26  

98  

V

A

–

t

rr  

T

J

= 25°C, I

F

= 20A  

di/dt = 500A/

μ

s

(Note3)  

nS  

nC  

Qrr  

N-Channel Super Trench Power Mosfet  

SUD40N10-25-E3  

Typical Electrical and Thermal Characteristics  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 1 Output Characteristics  

Figure 4 Rdson-Junction Temperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

N-Channel Super Trench Power Mosfet  

SUD40N10-25-E3  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Capacitance vs Vds  

Figure 9 Power De-rating  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature (

℃

)  

Figure 8 Safe Operation Area  

Figure 10 Current De-rating  

Square Wave Pluse Duration(sec)  

Figure 11 Normalized Maximum Transient Thermal Impedance  

N-Channel Super Trench Power Mosfet  

SUD40N10-25-E3  

TO-252 Package Information  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

2.200  

0.000  

0.660  

0.460  

6.500  

5.100  

Max.  

2.400  

0.127  

0.860  

0.580  

6.700  

5.460  

Min.  

0.087  

0.000  

0.026  

0.018  

0.256  

0.201  

Max.  

0.094  

0.005  

0.034  

0.023  

0.264  

0.215  

A

A1  

b

c

D

D1  

D2  

E

4.83 TYP.  

0.190 TYP.  

6.000  

2.186  

9.800  

6.200  

2.386  

0.236  

0.086  

0.386  

0.244  

0.094  

0.409  

e

L

10.400  

L1  

L2  

L3  

L4  

Φ

θ

2.900 TYP.  

1.600 TYP.  

0.114 TYP.  

0.063 TYP.  

1.400  

1.700  

0.055  

0.067  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.350 TYP.  

0.211 TYP.