Torex-Semicon-XP152A12C0MR

XP152A12C0MR-G  

ETR1121_003  

Power MOSFET  

■

GENERAL DESCRIPTION  

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching  

characteristics.  

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.  

In order to counter static, a gate protect diode is built-in.  

The small SOT-23 package makes high density mounting possible.  

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FEATURES  

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APPLICATIONS  

●

Notebook PCs  

Low On-State Resistance

:

Rds(on) = 0.3  

Ω

@ Vgs = -4.5V  

@ Vgs = -2.5V  

:

Rds(on) = 0.5  

Ω

●

Cellular and portable phones  

●

On-board power supplies  

●

Li-ion battery systems  

Ultra High-Speed Switching  

Gate Protect Diode Built-in  

Driving Voltage  

: -2.5V  

P-Channel Power MOSFET  

DMOS Structure  

Small Package  

: SOT-23  

Environmentally Friendly

: EU RoHS Compliant, Pb Free  

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PIN CONFIGURATION/  

■

PIN ASSIGNMENT  

MARKING  

PRODUCTS  

XP152A12C0MR  

XP152A12C0MR-G

(*)  

PACKAGE  

ORDER UNIT  

3,000/Reel  

3,000/Reel  

SOT-23  

G

：

Gate  

SOT-23  

being fully RoHS compliant.  

S

：

Source  

2

1

2

x

D

：

Drain  

* x represents production lot number.  

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ABSOLUTE MAXIMUM RATINGS  

Ta =

2

5

℃

 

■

EQUIVALENT CIRCUIT  

PARAMETER  

SYMBOL RATINGS

 

UNITS  

Drain – Source Voltage  

Gate – Source Voltage  

Drain Current

 

(DC)  

Vdss  

Vgss  

Id  

-20  

±

12  

-0.7  

V

V

A

Drain Current

 

(Pulse)  

Reverse Drain Current  

Channel Power Dissipation *  

Channel

T

e

mperature  

Storage

T

e

mperature  

Idp  

-2.8  

A

Idr  

-0.7  

A

Pd  

0.5  

W

℃

℃

T

c

h  

T

s

tg  

150  

-55~150  

* When implemented on a ceramic PCB  

1/5  

XP152A12C0MR-G  

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ELECTRICAL CHARACTERISTICS  

DC Characteristics  

T

a = 25

℃

 

PARAMETER  

SYMBOL  

CONDITIONS  

MIN.  

TY

P

.  

MAX.  

UNITS  

Drain Cut-Off Current  

Gate-Source Leak Current  

Gate-Source Cut-Off Voltage  

Idss  

Igss  

Vds= -20V, Vgs= 0V  

Vgs=

±

12V, Vds= 0V  

Id= -1mA, Vds= -10V  

Id= -0.4A, Vgs= -4.5V  

Id= -0.4A, Vgs= -2.5V  

–

–

–

-10  

±

10  

-1.2  

μ

A  

μ

A  

V

–

Vgs(off)  

-0.5  

–

–

–

0.23  

0.37  

0.30  

0.50  

Ω

Drain-Source On-State Resistance *1  

Forward Transfer Admittance *1  

Rds(on)  

| Yfs |  

Vf  

Ω

Id= -0.4A, Vds= -10V  

If= -0.7A, Vgs= 0V  

–

–

1.5  

–

S

V

Body Drain Diode  

Forward Voltage  

-0.8  

-1.1  

*1 Effective during pulse test.  

Dynamic Characteristics  

PARAMETER  

T

a = 25

℃  

SYMBOL  

Ciss  

CONDITIONS  

MIN.  

TY

P

.  

MAX.  

UNITS  

Input Capacitance  

–

–

–

180  

120  

60  

–

–

–

pF  

pF  

pF  

Vds= -10V, Vgs=0V  

f= 1MHz  

Output Capacitance  

Feedback Capacitance  

Coss  

Crss  

Switching Characteristics  

PARAMETER  

T

a = 25

℃  

SYMBOL  

td (on)  

CONDITIONS  

MIN.  

TY

P

.  

MAX.  

UNITS  

Turn-On Delay Time  

Rise Time  

–

–

–

–

5

–

–

–

–

ns  

ns  

ns  

ns  

tr  

20  

55  

70  

Vgs= -5V, Id= -0.4A  

Vdd= -10V  

Turn-Off Delay Time  

Fall Time  

td (off)  

tf  

Thermal Characteristics  

PARAMETER  

SYMBOL  

Rth (ch-a)  

CONDITIONS  

MIN.  

–

TY

P

.  

250  

MAX.  

–

UNITS  

Thermal Resistance  

(Channel-Ambience)  

Implement on a ceramic PCB  

℃

/W  

2/5  

XP152A12C0MR-G  

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TYPICAL PERFOMANCE CHARACTERISTICS  

3/5  

XP152A12C0MR-G  

■

TYPICAL PERFOMANCE CHARACTERISTICS (Continued)  

4/5  

XP152A12C0MR-G  

1. The

 

products and product specifications contained herein are subject to change without  

notice to improve performance characteristics.

 

Consult us, or our representatives  

before use, to confirm that the information in this datasheet is up to date.  

2. We

 

assume no responsibility for any infringement of patents, patent rights, or other  

rights arising from the use of any information and circuitry in this datasheet.  

3. Please

 

ensure suitable shipping controls (including fail-safe designs and aging  

protection) are in force for equipment employing products listed in this datasheet.  

4. The

 

products in this datasheet are not developed, designed, or approved for use with  

such equipment whose failure of malfunction can be reasonably expected to directly  

endanger the life of, or cause significant injury to, the user.  

(e.g. Atomic energy; aerospace; transport; combustion and associated safety  

equipment thereof.)  

5. Please

 

use the products listed in this datasheet within the specified ranges.  

Should you wish to use the products under conditions exceeding the specifications,  

please consult us or our representatives.  

6. We

 

assume no responsibility for damage or loss due to abnormal use.  

7. All

 

rights reserved. No part of this datasheet may be copied or reproduced without the  

prior permission of TOREX SEMICONDUCTOR LTD.  

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