TOSHIBA-SSM3J325F-LF
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SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS
Ⅵ
)
SSM3J325F
○
Power Management Switch Applications
Unit: mm
+0.5
•
•
1.5-V drive
Low ON-resistance: R
2.5-0.3
+0.25
1.5-0.15
= 311 m
Ω
(max) (@V
= 231 m
Ω
(max) (@V
= 179 m
Ω
(max) (@V
= 150 m
Ω
(max) (@V
= -1.5 V)
= -1.8 V)
= -2.5 V)
= -4.5 V)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
R
R
R
1
2
3
Absolute Maximum Ratings
(
T
a = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
-20
Unit
V
V
V
DSS
Gate-source voltage
±
8
V
GSS
DC
I
I
(Note 1)
(Note 1)
(Note 2)
t = 1s
-2.0
D
Drain current
A
Pulse
-4.0
DP
1.Gate
P
600
D
2.Source
3.Drain
Power dissipation
mW
1200
150
S-
M
INI
JEDEC
Channel temperature
T
°
C
°
C
ch
Storage temperature range
T
−
55 to 150
stg
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEI
T
A
TOSHIBA
2-3F1F
Weight: 12 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150
°
C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking
Equivalent Circuit
3
3
KFE
1
2
1
2
Start of commercial production
2010-01
1
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SSM3J325F
Electrical Characteristics
(
T
a = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0 V
= 5 V
-20
-15
―
―
―
―
―
V
V
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
.
(Note 4)
Drain cut-off current
I
V
V
V
V
= -20 V, V
= 0 V
GS
―
-1
μ
A
μ
A
V
DSS
DS
GS
DS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
=
±
8 V, V
= 0 V
―
―
±
1
-1.0
―
GSS
DS
V
= -3 V, I
= -1 mA
-0.3
2.2
―
―
th
D
|Y |
fs
= -3 V, I
= -1.0 A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
4.4
123
143
170
192
270
40
S
D
I
I
I
I
= -1.0 A, V
= -0.6 A, V
= -0.4 A, V
= -0.2 A, V
= -4.5 V
= -2.5 V
= -1.8 V
= -1.5 V
150
179
231
311
―
D
D
D
D
GS
GS
GS
GS
―
Drain–source ON-resistance
R
m
Ω
DS (ON)
―
―
Input capacitance
C
iss
―
V
= -10 V, V
= 0 V
GS
DS
Output capacitance
C
oss
―
―
pF
ns
f = 1 MHz
Reverse transfer capacitance
C
rss
―
32
―
Turn-on time
Switching time
t
―
17
―
V
V
= -10 V, I
= -1.0 A
D
on
off
DD
GS
= 0 to -2.5 V, R
= 4.7
Ω
Turn-off time
t
―
43
―
G
Total gate charge
Q
―
4.6
0.4
0.9
0.97
―
g
V
V
= -10 V, I
= -4.5V
= -2.0 A,
DD
DD
GS
Gate-source charge
Gate-drain charge
Q
gs1
―
―
nC
V
Q
gd
―
―
Drain-source forward voltage
V
I
= 2.0 A, V
= 0 V
GS
(Note 3)
―
1.2
DSF
D
Note 3:
Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V
mode. Note that
(BR)DSX
the drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0 V
(b) V
IN
90%
OUT
0
IN
10%
−
2.5 V
−
2.5V
R
L
(c) V
OUT
V
DS (ON)
90%
10
μ
s
V
DD
V
R
= -10 V
= 4.7
Ω
DD
10%
G
V
DD
t
t
f
r
Duty
≤
1%
: t , t
< 5 ns
V
IN
r f
t
t
off
on
Common Source
Ta = 25°C
Notice on Usage
Let V
be the voltage applied between gate and source that causes the drain current (I
) to be low (-1 mA for the
th
D
SSM3J325F). Then, for normal switching operation, V
must be higher than V
and V
must be lower than
th, GS(off)
GS(on)
V
th.
This relationship can be expressed as: V
< V
< V
.
GS(off)
th GS(on)
T
a
ke this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R
th (ch-a)
and drain power dissipation P
vary depending on board material, board area, board
D
thickness and pad area. When using this device, please take heat dissipation into consideration.
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2016-11-10
SSM3J325F
I
– V
DS
D
I –
V
D GS
-5
-4
-10
-1
Common Source
= -3 V
V
DS
-2.5V
-4.5V
Pulse test
-1.8 V
-3
-2
-0.1
-25 °C
Ta = 100 °C
V
GS
= -1.5 V
-0.01
25 °C
-1
0
-0.001
Common Source
Ta =
2
5 °C
Pulse test
-0.0001
0
-1.0
-2.0
-0.2
-0.4
-0.6
-0.8
-1
0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– I
D
DS (ON)
R
– V
GS
DS (ON)
400
300
200
400
I
= -1.0A
Common Source
Ta =
2
5°C
D
-1.5 V
Common Source
Pulse test
Pulse test
300
200
-1.8V
25 °C
-2.5 V
Ta = 100 °C
100
0
100
0
V
= -4.5 V
GS
-25 °C
0
-2
-4
-6
-8
0
-2.0
-4.0
-6.0
-8.0
Gate–source voltage
V
(V)
GS
Drain current
I
(A)
D
V
–
T
a
th
R
–
T
a
DS (ON)
400
-1.0
Common Source
Pulse test
Common Source
= -3 V
V
DS
= -1 mA
I
D
300
200
100
0
-0.6 A / -2.5 V
-0.4 A / -1.8V
-0.2 A / -1.5 V
-0.5
I
= -1.0 A / V
= -4.5 V
GS
D
0
−
50
0
50
100
150
−
50
0
50
100
150
Ambient temperature
T
a
(
°C)
Ambient temperature
T
a
(
°C)
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SSM3J325F
I
– V
DS
DR
|Y |
– I
fs
D
10
10
1
Common Source
= 0 V
Common Source
= -3 V
V
GS
V
DS
Pulse test
Ta =
2
5°C
Pulse test
D
3
1
I
G
DR
-25 °C
S
0.1
Ta =100 °C
25 °C
0.3
0.1
0.01
0.001
-1
-0.1
-10
-0.01
0
0.5
1.0
1.5
Drain current
I
(A)
Drain–source voltage
V
(V)
D
DS
C – V
t – I
D
DS
1000
10000
Common Source
V
V
= -10 V
= 0 to -2.5 V
DD
GS
t
off
Ta =
2
5 °C
R
G
= 4.7
Ω
300
100
1000
100
C
iss
t
f
t
on
C
C
oss
10
1
30
10
Common Source
Ta
=
25 °C
rss
f
=
1 MHz
t
r
V
GS
=
0 V
-0.1
-1
-10
-100
-0.001
-0.01
-0.1
-1
-10
Drain-source voltage
V
(V)
DS
Drain current
I
(A)
D
Dynamic Input Characteristic
-8
-6
-4
-2
0
Common Source
= -2.0 A
Ta =
2
5°C
I
D
V
DD
= – 10 V
V
= – 16 V
DD
0
2
4
6
8
10
T
o
tal Gate Charge
Qg (nC)
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SSM3J325F
P
–
T
a
D
–
t
Rth
w
1000
100
10
1000
a: Mounted on FR4 board
(25.4mm
×
25.4mm
×
1.6mm , Cu Pad : 645 mm
2
)
b: Mounted on FR4 board
b
a
(25.4mm
×
25.4mm
×
1.6mm , Cu Pad : 0.8 mm
2
×
3)
800
600
a
b
400
200
Single pulse
a. Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
b. Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.8 mm
2
×
3)
1
0
-40 -20
0
20
40
60
80 100 120
140 160
0.001
0.01
0.1
1
10
100
1000
Ambient temperature
T
a
(
°C)
Pulse width
t
w
(s)
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2016-11-10
SSM3J325F
RESTRICTIONS ON PRODUCT USE
•
T
o
shiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
•
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
•
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLIC
A
T
IONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS TH
A
T
R
EQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILIT
Y
, AND/OR A MALFUNCTION OR FAILURE OF WHICH
M
A
Y
C
AUSE LOSS OF HUMAN LIFE, BODILY INJUR
Y
,
S
ERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
(
“
UNINTENDED USE
“
).
Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields.
IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUC
T
.
For details, please contact your
TOSHIBA sales representative.
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
•
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
•
ABSENT A WRITTEN SIGNED AGREEMEN
T
,
E
XCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUC
T
, A
N
D TO THE MAXIMUM EXTENT ALLOWABLE BY L
A
W, TOSHIBA (1) ASSUMES NO LIABILITY
WH
A
T
SOEVER, INCLUDING WITHOUT LIMIT
A
T
ION, INDIREC
T
,
C
ONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMIT
A
T
ION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF D
A
TA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS REL
A
T
ED TO
SALE, USE OF PRODUC
T
,
O
R INFORM
A
T
ION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILIT
Y
,
F
ITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORM
A
T
ION, OR NONINFRINGEMEN
T
.
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
•
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive.
TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE L
A
W
S AND REGUL
A
T
IONS.
6
2016-11-10
