TOSHIBA-TPH1R204PL-LQ-M1
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TPH1R204PL
MOSFETs Silicon
N-channel MOS (U-MOS
-H)
TPH1R204PL
1. Applications
•
High-Efficiency DC-DC Converters
•
Switching Voltage Regulators
2. Features
(1) High-speed
switching
(2) Small
gate charge: Q
SW
= 17 nC (typ.)
(3) Small
output charge: Q
oss
= 56 nC (typ.)
(4) Low
drain-source on-resistance: R
DS(ON)
= 1.0 m
Ω
(typ.) (V
GS
= 10 V)
(5) Low
leakage current: I
DSS
= 10
µ
A (max) (V
DS
= 40 V)
(6) Enhancement
mode: V
th
= 1.4 to 2.4 V (V
DS
= 10 V, I
D
= 0.5 mA)
3. Packaging
and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance(N)
The package can be selected according to your preference. For details, please contact your TOSHIBA sales
representative.
Start of commercial production
2015-09
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
1
TPH1R204PL
4. Absolute
Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
V
DSS
V
GSS
I
D
40
±
20
(T
c
= 25
)
(Silicon limit)
(t = 100
µ
s)
(T
c
= 25
)
(Note 1), (Note 2)
(Note 1), (Note 2)
(Note 1)
150
A
A
I
D
246
I
DP
P
D
500
A
132
W
W
W
mJ
A
(Note 3)
(Note 4)
(Note 5)
(Note 5)
P
D
3
P
D
0.96
127
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
E
AS
I
AS
120
T
ch
T
stg
175
Storage temperature
-55 to 175
Note: Using
continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal
Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
Max
Unit
(T
c
= 25
)
(T
a
= 25
)
(T
a
= 25
)
R
th(ch-c)
R
th(ch-a)
R
th(ch-a)
1.13
50
/W
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(Note 3)
(Note 4)
156
Note 1: Ensure that the channel temperature does not exceed 175
.
Note 2: Limited by package limit. Silicon chip capability is 246 A. (T
c
= 25
)
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: V
DD
= 32 V, T
ch
= 25
(initial), L = 0.0068 mH, I
AS
= 120 A
Fig. 5.1
Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2
Device Mounted on a Glass-Epoxy
Board (b)
Note: This
transistor is sensitive to electrostatic discharge and should be handled with care.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
2
TPH1R204PL
6. Electrical
Characteristics
6.1. Static
Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
I
DSS
V
GS
=
±
20 V, V
DS
= 0 V
±
0.1
10
µ
A
Drain cut-off current
V
DS
= 40 V, V
GS
= 0 V
Drain-source breakdown voltage
V
(BR)DSS
I
D
= 10 mA, V
GS
= 0 V
V
(BR)DSX
I
D
= 10 mA, V
GS
= -20 V
40
25
1.4
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 0.5 mA
V
GS
= 4.5 V, I
D
= 50 A
V
GS
= 10 V, I
D
= 50 A
2.4
2.1
1.24
Drain-source on-resistance
R
DS(ON)
1.5
1.0
m
Ω
6.2. Dynamic
Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
C
iss
C
rss
C
oss
r
g
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
5500
93
7200
Reverse transfer capacitance
Output capacitance
1300
0.6
13
Gate resistance
1.1
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
t
r
See Fig. 6.2.1
ns
t
on
t
f
33
10
t
off
58
V
DD
≈
20 V
V
GS
= 0 V/ 10 V
I
D
= 50 A
R
L
= 0.4
Ω
R
GG
= 4.7
Ω
R
GS
= 4.7
Ω
Duty
≤
1 %, t
w
= 10
µ
s
Fig. 6.2.1
Switching Time Test Circuit
6.3. Gate
Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Symbol
Q
g
Test Condition
Min
Typ.
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
V
DD
≈
20 V, V
GS
= 10 V, I
D
= 50 A
V
DD
≈
20 V, V
GS
= 4.5 V, I
D
= 50 A
V
DD
≈
20 V, V
GS
= 10 V, I
D
= 50 A
74
34
16
17
17
56
Gate-source charge 1
Gate-drain charge
Gate switch charge
Output charge
Q
gs1
Q
gd
Q
SW
Q
oss
V
DS
= 20 V, V
GS
= 0 V
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
3
TPH1R204PL
6.4. Source-Drain
Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
500
Unit
A
Reverse drain current (pulsed)
(Note 6)
I
DRP
(t = 100
µ
s)
Diode forward voltage
Reverse recovery time
V
DSF
t
rr
I
DR
= 150 A, V
GS
= 0 V
-1.2
V
V
R
= 20 V, I
DR
= 37.5 A, V
GS
=
46
ns
0 V, -dI
DR
/dt = 100 A/
µ
s
Reverse recovery charge
Q
rr
V
R
= 20 V, I
DR
= 37.5 A, V
GS
=
46
nC
0 V, -dI
DR
/dt = 100 A/
µ
s
Note 6: Ensure that the channel temperature does not exceed 175
.
7. Marking
Fig. 7.1
Marking
©2016-2019
2019-10-18
Rev.4.0
4
Toshiba Electronic Devices & Storage Corporation
TPH1R204PL
8. Characteristics
Curves (Note)
Fig. 8.1
I
D
– V
DS
Fig. 8.2
I
D
– V
DS
Fig. 8.3
I
D
– V
GS
Fig. 8.4
V
DS
– V
GS
Fig. 8.5
R
DS(ON)
– I
D
Fig. 8.6
I
DR
– V
DS
©2016-2019
2019-10-18
Rev.4.0
5
Toshiba Electronic Devices & Storage Corporation
TPH1R204PL
Fig. 8.7
V
(BR)DSS
– T
a
Fig. 8.8
V
th
– T
a
Fig. 8.9
R
DS(ON)
– T
a
Fig. 8.10
Dynamic Input/Output Characteristics
Fig. 8.11
Capacitance – V
DS
Fig. 8.12
Q
oss
– V
DS
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
6
TPH1R204PL
Fig. 8.13
r
th
– t
w
(Guaranteed Maximum)
Fig. 8.14
P
D
– T
a
Fig. 8.15
P
D
– T
c
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig. 8.16
Safe Operating Area
(Guaranteed Maximum)
Note: The
above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
7
TPH1R204PL
Package Dimensions
Unit: mm
The package can be selected according to your preference. For details, please contact your TOSHIBA sales
representative.
Weight: 0.079 g (typ.)
Package Name(s)
TOSHIBA: 2-5Q1S
Nickname: SOP Advance
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
8
TPH1R204PL
Package Dimensions
Unit: mm
The package can be selected according to your preference. For details, please contact your TOSHIBA sales
representative.
Weight: 0.105 g (typ.)
Package Name(s)
TOSHIBA: 2-5W1A
Nickname: SOP Advance(N)
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.4.0
9
