TOSHIBA-TPH1R306PL1-LQ

TPH1R306PL1  

MOSFETs Silicon

 

N-channel MOS (U-MOS



-H)  

TPH1R306PL1  

1. Applications  

•

•

•

High-Efficiency DC-DC Converters  

Switching Voltage Regulators  

Motor Drivers  

2. Features  

(1) High-speed

 

switching  

(2) Small

 

gate charge: Q

SW

= 22 nC (typ.)  

(3) Small

 

output charge: Q

oss

= 77.5 nC (typ.)  

(4) Low

 

drain-source on-resistance: R

DS(ON)

= 1.0 m

Ω

(typ.) (V

GS

= 10 V)  

(5) Low

 

leakage current: I

DSS

= 10

µ

A (max) (V

DS

= 60 V)  

(6) Enhancement

 

mode: V

th

= 1.5 to 2.5 V (V

DS

= 10 V, I

D

= 1.0 mA)  

3. Packaging

 

and Internal Circuit  

1, 2, 3: Source  

4: Gate  

5, 6, 7, 8: Drain  

SOP Advance(N)  

Start of commercial production  

2020-03  

©2019-2020  

2020-06-26  

Rev.2.0  

1

Toshiba Electronic Devices & Storage Corporation  

TPH1R306PL1  

4. Absolute

 

Maximum Ratings (Note) (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Rating  

Unit  

V

Drain-source voltage  

Gate-source voltage  

Drain current (DC)  

Drain current (DC)  

Drain current (pulsed)  

Power dissipation  

Power dissipation  

Power dissipation  

V

DSS  

V

GSS  

I

D  

60  

±

20  

(T

c

= 25



)  

(Silicon limit)  

(t = 100

µ

s)  

(T

c

= 25



)  

(Note 1)  

(Note 1), (Note 2)  

(Note 1)  

100  

A

A

I

D  

280  

I

DP  

P

D  

500  

A

210  

W

W

W

mJ  

A

(Note 3)  

(Note 4)  

(Note 5)  

(Note 5)  

P

D  

3.0  

P

D  

0.96  

455  

Single-pulse avalanche energy  

Single-pulse avalanche current  

Channel temperature  

E

AS  

I

AS  

50  

T

ch  

T

stg  

175  





Storage temperature  

-55 to 175  

Note: Using

 

continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  

ratings.  

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test  

report and estimated failure rate, etc).  

5. Thermal

 

Characteristics  

Characteristics  

Channel-to-case thermal resistance  

Symbol  

Max  

Unit  

(T

c

= 25



)  

R

th(ch-c)  

R

th(ch-a)  

R

th(ch-a)  

0.71  

50  



/W  

Channel-to-ambient thermal resistance  

Channel-to-ambient thermal resistance  

(Note 3)  

(Note 4)  

156  

Note 1: Ensure that the channel temperature does not exceed 175



.  

Note 2: Limited by silicon chip capability.  

Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1  

Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2  

Note 5: V

DD

= 48 V, T

ch

= 25



(initial), L = 140

µ

H, I

AS

=50 A  

Fig. 5.1

 

Device Mounted on a Glass-Epoxy  

Board (a)  

Fig. 5.2

 

Device Mounted on a Glass-Epoxy  

Board (b)  

Note: This

 

transistor is sensitive to electrostatic discharge and should be handled with care.  

©2019-2020  

Toshiba Electronic Devices & Storage Corporation  

2020-06-26  

Rev.2.0  

2

TPH1R306PL1  

6. Electrical

 

Characteristics  

6.1. Static

 

Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Test Condition  

Min  

Typ.  

Max  

Unit  

Gate leakage current  

I

GSS  

I

DSS  

V

GS

=

±

20 V, V

DS

= 0 V  









±

0.1  

10  

µ

A  

Drain cut-off current  

V

DS

= 60 V, V

GS

= 0 V  

Drain-source breakdown voltage  

Drain-source breakdown voltage

 

(Note 6)  

Gate threshold voltage  

V

(BR)DSS

I

D

= 10 mA, V

GS

= 0 V  

V

(BR)DSX

I

D

= 10 mA, V

GS

= -20 V  

60  

45  

1.5  







V





V

th  

V

DS

= 10 V, I

D

= 1.0 mA  

V

GS

= 4.5 V, I

D

= 42 A  

V

GS

= 10 V, I

D

= 50 A  



2.5  

2.3  

1.34  

Drain-source on-resistance  

R

DS(ON)  

1.5  

1.0  

m

Ω  



Note 6: If a reverse bias is applied between gate and source, this device enters V

(BR)DSX

mode. Note that the drain-  

source breakdown voltage is lowered in this mode.  

6.2. Dynamic

 

Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Input capacitance  

Symbol  

Test Condition  

Min  

Typ.  

Max  

Unit  

pF  

C

iss  

C

rss  

C

oss  

r

g  

V

DS

= 30 V, V

GS

= 0 V, f = 1 MHz  

















6250  

80  

8100  



Reverse transfer capacitance  

Output capacitance  

1160  

0.5  



Gate resistance  



1.0  



Ω

Switching time (rise time)  

Switching time (turn-on time)  

Switching time (fall time)  

Switching time (turn-off time)  

t

r  

See Fig. 6.2.1  

8.3  

ns  

t

on  

t

f  

20  



14.7  

70  



t

off  



V

DD

≈

30 V  

V

GS

= 0 V/ 10 V  

I

D

= 50 A  

R

L

= 0.6

Ω  

R

GG

= 4.7

Ω  

R

GS

= 4.7

Ω  

Duty

≤

1 %, t

w

= 10

µ

s  

Fig. 6.2.1

 

Switching Time Test Circuit  

6.3. Gate

 

Charge Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Q

g  

Test Condition  

Min  

Typ.  

Max  

Unit  

nC  

Total gate charge (gate-source plus  

gate-drain)  

V

DD

≈

30 V, V

GS

= 10 V, I

D

= 50 A  

V

DD

≈

30 V, V

GS

= 4.5 V, I

D

= 42 A  

V

DD

≈

30 V, V

GS

= 10 V, I

D

= 50 A  













91  

44  













Gate-source charge 1  

Gate-drain charge  

Gate switch charge  

Output charge  

Q

gs1  

Q

gd  

17.3  

14.4  

22  

Q

SW  

Q

oss  

V

DS

= 30 V, V

GS

= 0 V, f = 1 MHz  

77.5  

©2019-2020  

Toshiba Electronic Devices & Storage Corporation  

2020-06-26  

Rev.2.0  

3

TPH1R306PL1  

6.4. Source-Drain

 

Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Test Condition  

Min  

Typ.  

Max  

500  

Unit  

A

Reverse drain current (pulsed)  

(Note 7)  

I

DRP  







(t = 100

µ

s)  

Diode forward voltage  

Reverse recovery time  

Reverse recovery charge  

V

DSF  

t

rr  

I

DR

= 100 A, V

GS

= 0 V  









47  

48  

-1.2  



V

V

R

= 30 V, I

DR

= 25 A, V

GS

= 0  

V, -dI

DR

/dt = 100 A/

µ

s  

ns  

nC  

Q

rr  



Note 7: Ensure that the channel temperature does not exceed 175



.  

7. Marking  

Fig. 7.1

 

Marking  

©2019-2020  

2020-06-26  

Rev.2.0  

4

Toshiba Electronic Devices & Storage Corporation  

TPH1R306PL1  

8. Characteristics

 

Curves (Note)  

Fig. 8.1

 

I

D

– V

DS  

Fig. 8.2

 

I

D

– V

DS  

Fig. 8.3

 

I

D

– V

GS  

Fig. 8.4

 

V

DS

– V

GS  

Fig. 8.5

 

R

DS(ON)

– I

D  

Fig. 8.6

 

I

DR

– V

DS  

©2019-2020  

2020-06-26  

Rev.2.0  

5

Toshiba Electronic Devices & Storage Corporation  

TPH1R306PL1  

Fig. 8.7

 

V

(BR)DSS

– T

a  

Fig. 8.8

 

V

th

– T

a  

Fig. 8.9

 

R

DS(ON)

– T

a  

Fig. 8.10

 

Dynamic Input/Output Characteristics  

Fig. 8.11

 

Capacitance – V

DS  

Fig. 8.12

 

Q

oss

– V

DS  

©2019-2020  

Toshiba Electronic Devices & Storage Corporation  

2020-06-26  

Rev.2.0  

6

TPH1R306PL1  

Fig. 8.13

 

r

th

– t

w  

(Guaranteed Maximum)  

Fig. 8.14

 

P

D

– T

a  

Fig. 8.15

 

P

D

– T

c  

(Guaranteed Maximum)  

(Guaranteed Maximum)  

Fig. 8.16

 

Safe Operating Area  

(Guaranteed Maximum)  

Note: The

 

above characteristics curves are presented for reference only and not guaranteed by production test,  

unless otherwise noted.  

©2019-2020  

Toshiba Electronic Devices & Storage Corporation  

2020-06-26  

Rev.2.0  

7

TPH1R306PL1  

Package Dimensions  

Unit: mm  

Weight: 0.111 g (typ.)  

Package Name(s)  

TOSHIBA: 2-5W1A  

Nickname: SOP Advance(N)  

©2019-2020  

Toshiba Electronic Devices & Storage Corporation  

2020-06-26  

Rev.2.0  

8

TPH1R306PL1  

RESTRICTIONS ON PRODUCT USE  

Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.  

Hardware, software and systems described in this document are collectively referred to as “Product”.  

•

•

TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s  

written permission, reproduction is permissible only if reproduction is without alteration/omission.  

•

Thoug

h

T

OSHIB

A

w

ork

s

c

ontinuall

y

t

o

i

mprov

e

P

roduct’

s

q

ualit

y

a

n

d

r

eliability

,

P

roduc

t

c

a

n

m

alfunctio

n

o

r

f

ail

.

C

ustomer

s

a

r

e

r

esponsible  

for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which  

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage  

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate  

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA  

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the  

precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application  

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,  

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating  

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample  

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.  

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  

•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY  

CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  

(“UNINTENDED USE”).  

Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in  

nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for  

automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,  

safety devices, elevators and escalators, and devices related to power plant.  

IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.  

For details, please contact your TOSHIBA sales representative or contact us via our website.  

•

•

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  

applicable laws or regulations.  

•

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any  

intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  

ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,  

INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING  

WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND  

(2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT,  

OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR  

PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  

•

•

Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,  

for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products  

(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and  

regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration  

Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all  

applicable export laws and regulations.  

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING  

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  

©2019-2020  

2020-06-26  

Rev.2.0  

9

Toshiba Electronic Devices & Storage Corporation