TOSHIBA-TPH4R008NH1-LQ-M
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TPH4R008NH1
MOSFE
T
s
S
ilicon
N-channel MOS (U-MOS
�
-H)
TPH4R008NH1
1. Applications
•
•
•
High-Efficiency DC-DC Converters
Switching
V
o
ltage Regulators
Motor Drivers
2. Features
(1) High-speed
switching
(2) Small
gate charge: Q
SW
= 18 nC (typ.)
(3) Small
output charge: Q
oss
= 77 nC (typ.)
(4) Low
drain-source on-resistance: R
DS(ON)
= 3.3 m
Ω
(typ.) (V
GS
= 10 V)
(5) Low
leakage current: I
DSS
= 10
µ
A (max) (V
DS
= 80 V)
(6) Enhancement
mode: V
th
= 2.0 to 4.0 V (V
DS
= 10
V
,
I
D
= 1.0 mA)
3. Packaging
and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance(N)
Start of commercial production
2020-03
©2019-2020
2020-11-09
Rev.3.0
1
T
o
shiba Electronic Devices & Storage Corporation
TPH4R008NH1
4. Absolute
Maximum Ratings (Note) (T
a
= 25
ꢀ
unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
V
DSS
V
GSS
I
D
80
±
20
(T
c
= 25
ꢀ
)
(Silicon limit)
(t = 100
µ
s)
(T
c
= 25
ꢀ
)
(Note 1)
(Note 1), (Note 2)
(Note 1)
116
A
A
I
D
146
I
DP
P
D
460
A
170
W
W
W
mJ
A
(Note 3)
(Note 4)
(Note 5)
(Note 5)
P
D
2.5
P
D
0.8
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
E
AS
I
AS
106
116
T
ch
T
stg
150
ꢀ
ꢀ
Storage temperature
-55 to 150
Note: Using
continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the
T
o
shiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal
Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
Max
Unit
(T
c
= 25
ꢀ
)
R
th(ch-c)
R
th(ch-a)
R
th(ch-a)
0.71
50
ꢀ
/W
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(Note 3)
(Note 4)
156
Note 1: Ensure that the channel temperature does not exceed 150
ꢀ
.
Note 2: Limited by silicon chip capability.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: V
DD
= 60
V
,
T
ch
= 25
ꢀ
(initial), L = 6.7
µ
H, I
AS
=116 A
Fig. 5.1
Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2
Device Mounted on a Glass-Epoxy
Board (b)
Note: This
transistor is sensitive to electrostatic discharge and should be handled with care.
©2019-2020
T
o
shiba Electronic Devices & Storage Corporation
2020-11-09
Rev.3.0
2
TPH4R008NH1
6. Electrical
Characteristics
6.1. Static
Characteristics (T
a
= 25
ꢀ
unless otherwise specified)
Characteristics
Symbol
T
e
st Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
I
DSS
V
GS
=
±
20
V
,
V
DS
= 0 V
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
3.3
±
0.1
10
µ
A
Drain cut-off current
V
DS
= 80
V
,
V
GS
= 0 V
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 6)
Gate threshold voltage
V
(BR)DSS
I
D
= 10 mA, V
GS
= 0 V
V
(BR)DSX
I
D
= 10 mA, V
GS
= -20 V
80
60
2.0
ꢁ
ꢁ
V
ꢁ
V
th
V
DS
= 10
V
,
I
D
= 1.0 mA
V
GS
= 10
V
,
I
D
= 50 A
4.0
4.0
Drain-source on-resistance
R
DS(ON)
m
Ω
Note 6: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic
Characteristics (T
a
= 25
ꢀ
unless otherwise specified)
Characteristics
Input capacitance
Symbol
T
e
st Condition
Min
Typ.
Max
Unit
pF
C
iss
C
rss
C
oss
r
g
V
DS
= 40
V
,
V
GS
= 0
V
, f = 1
M
Hz
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
4100
32
5300
64
ꢁ
Reverse transfer capacitance
Output capacitance
890
1.2
8.6
25
Gate resistance
ꢁ
1.8
ꢁ
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
t
r
See Fig. 6.2.1
ns
t
on
t
f
ꢁ
12
ꢁ
t
off
52
ꢁ
V
DD
≈
40 V
V
GS
= 0 V/ 10 V
I
D
= 30 A
R
L
= 1.33
Ω
R
GG
= 4.7
Ω
R
GS
= 4.7
Ω
Duty
≤
1 %, t
w
= 10
µ
s
Fig. 6.2.1
Switching Time
T
e
st Circuit
6.3. Gate
Charge Characteristics (T
a
= 25
ꢀ
unless otherwise specified)
Characteristics
Symbol
Q
g
T
e
st Condition
Min
Typ.
59
Max
Unit
nC
T
o
tal gate charge (gate-source plus
gate-drain)
V
DD
≈
40
V
,
V
GS
= 10
V
,
I
D
= 60 A
ꢁ
ꢁ
Gate-source charge 1
Gate-drain charge
Gate switch charge
Output charge
Q
gs1
Q
gd
ꢁ
ꢁ
ꢁ
ꢁ
18
12
18
77
ꢁ
ꢁ
ꢁ
ꢁ
nC
Q
SW
Q
oss
V
DS
= 40
V
,
V
GS
= 0
V
, f = 1
M
Hz
6.4. Source-Drain
Characteristics (T
a
= 25
ꢀ
unless otherwise specified)
Characteristics
Symbol
T
e
st Condition
Min
Typ.
Max
460
Unit
A
Reverse drain current (pulsed)
(Note 7)
I
DRP
ꢁ
ꢁ
ꢁ
(t = 100
µ
s)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
DSF
t
rr
I
DR
= 116 A, V
GS
= 0 V
ꢁ
ꢁ
ꢁ
ꢁ
54
72
-1.2
ꢁ
V
V
R
= 40
V
,
I
DR
= 29 A, V
GS
= 0
V,
–
dI
DR
/dt = 100 A/
µ
s
ns
nC
Q
rr
ꢁ
Note 7: Ensure that the channel temperature does not exceed 150
ꢀ
.
©2019-2020
T
o
shiba Electronic Devices & Storage Corporation
2020-11-09
Rev.3.0
3
TPH4R008NH1
7. Marking
Fig. 7.1
Marking
©2019-2020
2020-11-09
Rev.3.0
4
T
o
shiba Electronic Devices & Storage Corporation
TPH4R008NH1
8. Characteristics
Curves (Note)
Fig. 8.1
I
D
– V
DS
Fig. 8.2
I
D
– V
DS
Fig. 8.3
I
D
– V
GS
Fig. 8.4
V
DS
– V
GS
Fig. 8.5
R
DS(ON)
– I
D
Fig. 8.6
I
DR
– V
DS
©2019-2020
2020-11-09
Rev.3.0
5
T
o
shiba Electronic Devices & Storage Corporation
TPH4R008NH1
Fig. 8.7
V
(BR)DSS
– T
a
Fig. 8.8
V
th
– T
a
Fig. 8.9
R
DS(ON)
– T
a
Fig. 8.10
Dynamic Input/Output Characteristics
Fig. 8.11
Capacitance – V
DS
Fig. 8.12
Q
oss
– V
DS
©2019-2020
T
o
shiba Electronic Devices & Storage Corporation
2020-11-09
Rev.3.0
6
TPH4R008NH1
Fig. 8.13
r
th
– t
w
(Guaranteed Maximum)
Fig. 8.14
P
D
– T
a
Fig. 8.15
P
D
– T
c
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig. 8.16
Safe Operating Area
(Guaranteed Maximum)
Note: The
above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2019-2020
T
o
shiba Electronic Devices & Storage Corporation
2020-11-09
Rev.3.0
7
TPH4R008NH1
Package Dimensions
Unit: mm
Weight: 0.111 g (typ.)
Package Name(s)
TOSHIBA: 2-5W1A
Nickname: SOP Advance(N)
©2019-2020
T
o
shiba Electronic Devices & Storage Corporation
2020-11-09
Rev.3.0
8
TPH4R008NH1
RESTRICTIONS ON PRODUCT USE
T
o
shiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
•
•
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s
written permission, reproduction is permissible only if reproduction is without alteration/omission.
•
Thoug
h
T
OSHIB
A
w
ork
s
c
ontinuall
y
t
o
i
mprov
e
P
roduct’
s
q
ualit
y
a
n
d
r
eliability, Produc
t
c
a
n
m
alfunctio
n
o
r
f
ail. Customer
s
a
r
e
r
esponsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILIT
Y
,
A
ND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJUR
Y
,
S
ERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
(“UNINTENDED USE”).
Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in
nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, and devices related to power plant.
IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUC
T
.
For details, please contact your TOSHIBA sales representative or contact us via our website.
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Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any
intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMEN
T
,
E
XCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUC
T
,
A
ND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,
INCLUDING WITHOUT LIMITATION, INDIREC
T
,
C
ONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS,
INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS
OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE,
USE OF PRODUC
T
,
O
R INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILIT
Y
,
F
ITNESS FOR
A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMEN
T
.
•
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive.
TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
©2019-2020
2020-11-09
Rev.3.0
9
T
o
shiba Electronic Devices & Storage Corporation
