TOSHIBA-TPN2R203NC-L1Q-M

TPN2R203NC  

MOSFETs Silicon

 

N-channel MOS (U-MOS



)  

TPN2R203NC  

1. Applications  

•

Power Management Switches  

2. Features  

(1) Low

 

drain-source on-resistance: R

DS(ON)

= 1.8 m

Ω

(typ.) (V

GS

= 10 V)  

(2) Low

 

leakage current: I

DSS

= 10

µ

A (max) (V

DS

= 30 V)  

(3) Enhancement

 

mode: V

th

= 1.3 to 2.3 V (V

DS

= 10 V, I

D

= 0.5 mA)  

3. Packaging

 

and Internal Circuit  

1, 2, 3: Source  

4: Gate  

5, 6, 7, 8: Drain  

TSON Advance  

4. Absolute

 

Maximum Ratings (Note) (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Rating  

Unit  

Drain-source voltage  

Gate-source voltage  

Drain current (DC)  

Drain current (DC)  

Drain current (pulsed)  

Power dissipation  

Power dissipation  

Power dissipation  

V

DSS  

V

GSS  

I

D  

30  

±

20  

100  

45  

V

V

(Silicon limit)  

(T

c

= 25



)  

(t = 1 ms)  

(Note 1), (Note 2)  

(Note 1)  

A

I

D  

A

(Note 1)  

I

DP  

P

D  

200  

42  

A

(T

c

= 25



)  

(t = 10 s)  

W

W

W

mJ  

A

(Note 3)  

(Note 4)  

(Note 5)  

P

D  

1.9  

(t = 10 s)  

P

D  

0.7  

Single-pulse avalanche energy  

Avalanche current  

E

AS  

I

AR  

T

ch  

T

stg  

126  

45  

Channel temperature  

Storage temperature  

150  

-55 to 150  





Note: Using

 

continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  

ratings.  

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test  

report and estimated failure rate, etc).  

Start of commercial production  

2013-05  

©2019  

Toshiba Electronic Devices & Storage Corporation  

2019-10-30  

Rev.3.0  

1

TPN2R203NC  

5. Thermal

 

Characteristics  

Characteristics  

Symbol  

Max  

Unit  

Channel-to-case thermal resistance  

Channel-to-ambient thermal resistance  

Channel-to-ambient thermal resistance  

(T

c

= 25



)  

(t = 10 s)  

R

th(ch-c)  

R

th(ch-a)  

R

th(ch-a)  

2.97  

65.7  

178  



/W  



/W  



/W  

(Note 3)  

(Note 4)  

(t = 10 s)  

Note 1: Ensure that the channel temperature does not exceed 150



.  

Note 2: Limited by silicon chip capability.  

Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1  

Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2  

Note 5: V

DD

= 24 V, T

ch

= 25



(initial), L = 0.048 mH, I

AR

= 45 A  

Fig. 5.1

 

Device Mounted on a Glass-Epoxy  

Board (a)  

Fig. 5.2

 

Device Mounted on a Glass-Epoxy  

Board (b)  

Note: This

 

transistor is sensitive to electrostatic discharge and should be handled with care.  

©2019  

Toshiba Electronic Devices & Storage Corporation  

2019-10-30  

Rev.3.0  

2

TPN2R203NC  

6. Electrical

 

Characteristics  

6.1. Static

 

Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Test Condition  

Min  

Typ.  

Max  

Unit  

Gate leakage current  

I

GSS  

I

DSS  

V

GS

=

±

20 V, V

DS

= 0 V  









±

0.1  

10  

µ

A  

µ

A  

V

Drain cut-off current  

V

DS

= 30 V, V

GS

= 0 V  

Drain-source breakdown voltage  

Drain-source breakdown voltage

 

(Note 6)  

Gate threshold voltage  

V

(BR)DSS

I

D

= 10 mA, V

GS

= 0 V  

V

(BR)DSX

I

D

= 10 mA, V

GS

= -20 V  

30  

15  

1.3  











V

V

th  

V

DS

= 10 V, I

D

= 0.5 mA  

V

GS

= 4.5 V, I

D

= 22.5 A  

V

GS

= 10 V, I

D

= 22.5 A  



2.3  

3.6  

2.2  

V

Drain-source on-resistance  

Drain-source on-resistance  

R

DS(ON)  

R

DS(ON)  

2.8  

1.8  

m

Ω  

m

Ω  



Note 6: If a reverse bias is applied between gate and source, this device enters V

(BR)DSX

mode. Note that the drain-  

source breakdown voltage is lowered in this mode.  

6.2. Dynamic

 

Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Input capacitance  

Symbol  

Test Condition  

Min  

Typ.  

Max  

Unit  

C

iss  

C

rss  

C

oss  

t

r  

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz  















2230  

160  

650  

9















pF  

pF  

pF  

ns  

ns  

ns  

ns  

Reverse transfer capacitance  

Output capacitance  

Switching time (rise time)  

Switching time (turn-on time)  

Switching time (fall time)  

Switching time (turn-off time)  

See Fig. 6.2.1  

t

on  

14  

t

f  

24  

t

off  

68  

Fig. 6.2.1

 

Switching Time Test Circuit  

6.3. Gate

 

Charge Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Test Condition  

Min  

Typ.  

Max  

Unit  

Total gate charge (gate-source plus gate-drain)  

Gate-source charge 1  

Q

g  

Q

gs1  

Q

gd  

V

DD

≈

15 V, V

GS

= 10 V,  

I

D

= 45 A  







34  

8







nC  

nC  

nC  

Gate-drain charge  

6

6.4. Source-Drain

 

Characteristics (T

a

= 25



unless otherwise specified)  

Characteristics  

Symbol  

Test Condition  

Min  

Typ.  

Max  

Unit  

Reverse drain current (pulsed)

 

(1 ms)

 

(Note 7)  

Diode forward voltage  

I

DRP  











200  

-1.2  

A

V

V

DSF  

I

DR

= 45 A, V

GS

= 0 V  

Note 7: Ensure that the channel temperature does not exceed 150



.  

©2019  

Toshiba Electronic Devices & Storage Corporation  

2019-10-30  

Rev.3.0  

3

TPN2R203NC  

7. Marking  

Fig. 7.1

 

Marking  

©2019  

2019-10-30  

Rev.3.0  

4

Toshiba Electronic Devices & Storage Corporation  

TPN2R203NC  

8. Characteristics

 

Curves (Note)  

Fig. 8.1

 

I

D

– V

DS  

Fig. 8.2

 

I

D

– V

DS  

Fig. 8.3

 

I

D

– V

GS  

Fig. 8.4

 

V

DS

– V

GS  

Fig. 8.5

 

R

DS(ON)

– I

D  

Fig. 8.6

 

R

DS(ON)

– T

a  

©2019  

2019-10-30  

Rev.3.0  

5

Toshiba Electronic Devices & Storage Corporation  

TPN2R203NC  

Fig. 8.7

 

I

DR

– V

DS  

Fig. 8.8

 

Capacitance – V

DS  

Fig. 8.9

 

V

th

– T

a  

Fig. 8.10

 

Dynamic Input/Output Characteristics  

Fig. 8.11

 

P

D

– T

a  

Fig. 8.12

 

P

D

– T

c  

(Guaranteed Maximum)  

(Guaranteed Maximum)  

©2019  

Toshiba Electronic Devices & Storage Corporation  

2019-10-30  

Rev.3.0  

6

TPN2R203NC  

Fig. 8.13

 

r

th

– t

w  

(Guaranteed Maximum)  

Fig. 8.14

 

Safe Operating Area  

(Guaranteed Maximum)  

Note: The

 

above characteristics curves are presented for reference only and not guaranteed by production test,  

unless otherwise noted.  

©2019  

Toshiba Electronic Devices & Storage Corporation  

2019-10-30  

Rev.3.0  

7

TPN2R203NC  

Package Dimensions  

Unit: mm  

Weight: 0.029 g (typ.)  

Package Name(s)  

TOSHIBA: 2-3X1S  

Nickname: TSON Advance  

©2019  

Toshiba Electronic Devices & Storage Corporation  

2019-10-30  

Rev.3.0  

8

TPN2R203NC  

RESTRICTIONS ON PRODUCT USE  

Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.  

Hardware, software and systems described in this document are collectively referred to as “Product”.  

•

•

TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s  

written permission, reproduction is permissible only if reproduction is without alteration/omission.  

•

Thoug

h

T

OSHIB

A

w

ork

s

c

ontinuall

y

t

o

i

mprov

e

P

roduct’

s

q

ualit

y

a

n

d

r

eliability

,

P

roduc

t

c

a

n

m

alfunctio

n

o

r

f

ail

.

C

ustomer

s

a

r

e

r

esponsible  

for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which  

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage  

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate  

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA  

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the  

precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application  

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,  

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating  

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample  

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.  

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  

•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY  

CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  

(“UNINTENDED USE”).  

Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in  

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IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.  

For details, please contact your TOSHIBA sales representative or contact us via our website.  

•

•

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  

applicable laws or regulations.  

•

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  

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INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING  

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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING  

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  

©2019  

2019-10-30  

Rev.3.0  

9

Toshiba Electronic Devices & Storage Corporation