Tritech-MOS-TM0036P03D
| Part # | Tritech-MOS-TM0036P03D |
Download  | Tritech-MOS-TM0036P03D |
-Channel
TM0036P03D
P
Enhancement Mosfet
General Description
General Features
• Low R
DS(ON)
V
DS
=-30V I
=-100
A
D
• RoHS and Halogen-Free Compliant
=-10V
=
3.6 m
W
(
typ
.)@
V
GS
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 100P03
Absolute Maximum Ratings (TC=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
Value
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
GS
±20
V
T
C
=25°C
-100
I
D
Continuous Drain Current
Pulsed Drain Current
1
A
T
C
=100°C
-67
-360
I
DM
EAS
A
Single Pulse Avalanche Energy
2
Total Power Dissipation
125
mJ
W
P
D
T
C
=25°C
60
Operating Junction and Storage Temperature Range
-55 to 150
°C
T
J
,
T
STG
Thermal Characteristics
Parameter
Symbol
R
θJA
Value
50
Unit
°C/W
°C/W
Thermal Resistance from Junction-to-Ambient
3
Thermal Resistance from Junction-to-Case
R
θJC
1.58
1/6
-Channel
TM0036P03D
P
Enhancement Mosfet
Electrical Characteristics
(T
J
= 25°C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
V
(BR)DSS
l
GSS
Drain-Source Breakdown Voltage
Gate-body Leakage current
V
GS
= 0V, I
D
= -250µA
V
DS
= 0V, V
GS
= ±20V
-30
–
–
–
±100
-1
V
–
nA
T
J
=25°C
T
J
=100°C
–
–
Zero Gate Voltage Drain
Current
I
DSS
V
GS(th)
R
DS(on)
g
fs
V
DS
= -30V, V
GS
= 0V
μA
V
–
–
-100
-2.5
5.6
6.2
–
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -30A
V
GS
= -4.5V, I
D
= -15A
V
DS
= -10V, I
D
= -30A
-1.0
-1.5
3.6
5.5
90
–
–
–
Drain-Source On-Resistance
4
mΩ
S
Forward Transconductance
4
Dynamic Characteristics
5
Input Capacitance
C
iss
C
oss
C
rss
R
g
–
–
–
–
5070
695
580
4
–
–
–
–
V
DS
= -15V, V
GS
=0V,
Output Capacitance
pF
f =1MHz
Reverse Transfer Capacitance
Gate resistance
f =1MHz
Ω
Switching Characteristics
5
Total Gate Charge
Q
g
Q
gs
Q
gd
–
–
–
146
21.5
39
–
–
–
V
GS
= -10V,V
DS
= -15V,
Gate-Source Charge
Gate-Drain Charge
nC
ns
I
D
= -30A
t
d(on)
Turn-On Delay Time
–
23
–
t
r
t
d(off)
t
f
Rise Time
–
–
–
15
129
28
–
–
–
V
GS
= -10V, V
DD
= -15V,
R
G
= 3
Ω
, I
D
= -30A
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Diode Forward Voltage
4
I
S
= -30A, V
GS
= 0V
–
–
–
–
–
-1.2
V
A
V
SD
I
S
Continuous Source Current
T
C
=25°C
-100
Note :
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C
2. The EAS data shows Max. rating . The test condition is V
DD
= -25V, V
GS
= -10V, L= 0.1mH, I
AS
= -50A
3. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the
user’s specific board design.
2/6
-Channel
TM0036P03D
P
Enhancement Mosfet
Typical Characteristics
100
80
60
40
20
0
100
V
GS
= -10V
V
DS
= -5V
V
GS
= -4.5V
80
60
40
20
0
V
GS
= -3.5V
V
GS
= -3V
V
GS
= -2.5V
0
1
2
3
4
5
0
1
2
3
4
Gate−source voltage
-V
GS
(V)
Drain−source voltage
-V
DS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
100
10
1
60
40
20
0
I
D
= -30A
0.1
0
3
6
9
12
15
0.2
0.4
0.6
0.8
1.0
1.2
Gate−source voltage
-V
GS
(V)
Source−drain voltage
-V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
9
2.5
2.0
1.5
1.0
0.5
0.0
6
3
0
V
GS
= -4.5V
V
GS
= -10V
0
10
20
30
40
50
-50
-25
0
25
50
75
100 125 150
Temperature T
J
(
°
C
)
Drain current -I
D
(A)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3/6
-Channel
TM0036P03D
P
Enhancement Mosfet
100000
10000
1000
Ciss
Coss
Crss
100
F=1MHz
10
0
10
20
30
Drain-
source voltage
-V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
80
60
40
20
0
1000
100
10
10μ
s
100μ
s
DC
1ms
Limited by R
DS(on)
10ms
1
Single Pulse
0.1
0.01
T
C
=25
℃
T
J
=150
℃
0
25
50
75
100
125
150
0.1
1
10
100
Case Temperature T
C
(
°
C)
Drain−source voltage
-V
DS
(V)
Figure 9. Power Dissipation
Figure10. Safe Operating Area
10
1
Duty = 1.0
Duty = 0.5
Duty = 0.2
Duty = 0.1
Duty = 0.05
0.1
Duty = 0.02
Duty = 0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, Pulse
Width(S)
Figure 11. Normalized Maximum Transient Thermal Impedance
4/6
-Channel
TM0036P03D
P
Enhancement Mosfet
Test Circuit
V
GS
Qg
V
DS
Qgs
V
GS
Qgd
DUT
I
G
=const
Figure A. Gate Charge Test Circuit & Waveforms
R
L
V
DS
V
DD
V
GS
R
G
DUT
V
GS
Figure B. Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
DD
DUT
V
GS
tp
4
Figure C. Unclamped Inductive Switching Circuit & Waveforms
5/6
Package Information:TO-252-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.400
0.127
0.860
0.580
6.700
5.460
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
6/6
