Tritech-MOS-TM0052N03NF

-Channel  

N

TM0052N03NF  

Enhancement Mosfet  

General Features  

General Description  

V

DS

= 30V

 

I

D

= 70A  

• Low R

DS(ON)  

R

DS(ON)

=5.2m

Ω

（

typ.) @V  

• RoHS and Halogen-Free Compliant  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

NF:DFN5x6-8L  

Marking: 70N03  

Absolute Maximum Ratings  

(T

A

=25°C Unless Otherwise Noted)  

Rating  

Steady State  

Parameter  

Units  

Symbol  

V

DS  

10s  

Drain-Source Voltage  

30  

±

20  

V

V

V

GS  

Gate-Sou

r

ce Voltage  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

I

D

@T

C

=25

℃  

70  

A

I

D

@T

C

=100

℃  

60  

A

I

DM  

192  

A

EAS  

Single Pulse Avalanche Energy

3  

Avalanche Current  

306  

mJ  

A

I

AS  

P

D

@T

C

=25

℃  

T

STG  

53.8  

Total Power Dissipation

4  

82.5  

W

℃

℃

Storage Temperature Range  

Operating Junction Temperature Range  

-55 to 175  

-55 to 175  

T

J  

Thermal Data  

Symbol  

R

θJC  

Parameter  

Typ.  

—  

Max.  

0.56  

1.8  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-Case

1  

Thermal Resistance,Junction-to-Case

(Note 2)  

R

θJC  

—  

1/5  

-Channel  

N

TM0052N03NF  

Enhancement Mosfet  

Electrical Characteristics (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250μA  

V

DS

=30V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

30  

–

–

–

–

–

1

V

μA  

nA  

I

GSS  

–

±100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=30A  

V

GS

=5V, I

D

=24A  

V

DS

=5V,I

D

=24A  

1

–

1.5  

5.2  

7.5  

–

3

6.5  

10  

–

V

mΩ  

S

Drain-Source On-State Resistance  

–

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

20  

C

lss  

C

oss  

C

rss  

–

–

–

2016  

251  

–

–

–

PF  

PF  

PF  

V

DS

=15V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

230  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

20  

15  

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=10V,I

D

=30A  

V

GS

=10V,R

GEN

=2.7Ω  

Turn-Off Delay Time  

60  

Turn-Off Fall Time  

10  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

60.5  

8.1  

7.8  

V

DS

=10V,I

D

=30A,  

V

GS

=10V  

Gate-Source Charge  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

Reverse Recovery Time  

Reverse Recovery Charge  

Forward Turn-On Time  

V

SD  

I

S  

V

GS

=0V,I

S

=24A  

–

–

–

–

–

1.2  

70  

50  

20  

V

A

–

t

rr  

TJ = 25°C, IF = 80A  

di/dt = 100A/μs

(Note3)  

32  

12  

nS  

nC  

Qrr  

t

on  

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.  

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4.

Guaranteed by design, not subject to production  

5.

EAS condition

：

Tj=25

℃

,V

DD

=15V,V

G

=10V,L=0.5mH,Rg=25Ω

，

I

AS

=35A  

2/5  

-Channel  

N

TM0052N03NF  

Enhancement Mosfet  

Typical Electrical and Thermal Characteristics (Curves)  

Vds Drain-Source Voltage (V)  

T

J

-Junction Temperature(

℃

)  

Figure 1 Output Characteristics  

Figure 4 Rdson-JunctionTemperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

3/5  

-Channel  

N

TM0052N03NF  

Enhancement Mosfet  

Vds Drain-Source Voltage (V)  

T

J

-Junction Temperature(

℃

)  

Figure 7 Capacitance vs Vds  

Figure 9 BV

DSS

vs Junction Temperature  

Vds Drain-Source Voltage (V)  

T

J

-Junction Temperature(

℃

)  

Figure 8 Safe Operation Area  

Figure 10 V

GS(th)

vs Junction Temperature  

Square Wave Pluse Duration(sec)  

Figure 11 Normalized Maximum Transient Thermal Impedance  

4/5  

Package Mechanical Data:DFN5x6-8L  

Common  

Symbol  

mm  

Inch  

Mim  

1.03  

0.34  

0.824  

4.80  

4.11  

4.80  

5.95  

5.65  

1.60  

Max  

1.17  

0.48  

0.0970  

5.40  

4.31  

5.00  

6.15  

5.85  

/

Min  

Max  

0.0461  

0.0189  

0.082  

0.2126  

0.1697  

0.1969  

0.2421  

0.2303  

/

A

b

c

0.0406  

0.0134  

0.0324  

0.1890  

0.1618  

0.1890  

0.2343  

0.2224  

0.0630  

D

D1  

D2  

E

E1  

E2  

e

1.27 BSC  

0.05 BSC  

L

0.05  

0.38  

0.38  

3.30  

/

0.25  

0.50  

0.50  

3.50  

0.18  

0.0020  

0.0150  

0.0150  

0.1299  

/

0.0098  

0.0197  

0.0197  

0.1378  

0.0070  

L1  

L2  

H

I

5/5