Tritech-MOS-TM012P03DF
| Part # | Tritech-MOS-TM012P03DF |
Download  | Tritech-MOS-TM012P03DF |
TM012P03DF
-Channel Enhancement
Mosfet
P
General Description
General Features
V
DS
=- 30
V I
D
=-40
A
• Low R
DS(ON)
12m
R
DS(ON)
=
W
(
typ
.) @ V
GS
=-10V
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
DF:DFN3x3_8L
Marking:40P03
Absolute Maximum Ratings
(T
A
= 25°C, unless otherwise noted)
Rating
Steady State
Parameter
Symbol
V
DS
Units
10s
Drain-Source Voltage
-30
V
V
GS
Gate-Sou
r
ce Voltage
±
20
V
A
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-40
I
D
@T
C
=25
℃
-25
A
A
I
D
@T
C
=100
℃
I
DM
-120
Single Pulse Avalanche Energy
3
Avalanche Current
EAS
I
AS
105
mJ
A
-50
Total Power Dissipation
4
15
W
P
D
@T
A
=25
℃
T
STG
Storage Temperature Range
-55 to 150
-55 to 150
℃
℃
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Typ.
—
Max.
66
Unit
Thermal Resistance Junction-Ambient
1
℃
/W
R
θJA
1/6
-Channel Enhancement
Mosfet
P
TM012P03DF
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
GS
=0V, I
D
= -250μA
V
DS
= -30V, V
GS
=0V,
V
DS
=0V, V
GS
= ±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
-30
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -5A
V
GS(th)
R
DS(on)
Gate Threshold Voltage
-1.0
-1.5
-2.5
18
V
–
–
Static Drain-Source on-Resistance
Note3
12
18
mΩ
27
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
1330
183
156
22
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
=0V,
f=1.0MHz
C
oss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
g
V
DS
= -15V, I
D
= -5A,
V
GS
= -10V
1.0
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
1.8
Switching Characteristics
Turn-on Delay Time
–
–
–
–
9
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
= -15V, I
D
= -10A,
V
GS
=-10V, R
GEN
=2.5Ω
13
48
20
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
-40
-90
-1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= -15A
Voltage
-0.8
64
25
V
Reverse Recovery Time
Reverse Recovery Charge
T
J
=25
℃
,
ns
nC
V
DD
= -24V,I
F
=-2.8A,
dI/dt=-100A/μs
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition: T
J
=25
℃
, V
GS
=10V, R
G
=25Ω, L=0.5mH, I
AS
=-12.7A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2/6
-Channel Enhancement
Mosfet
P
TM012P03DF
Typical Performance Characteristics
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
-I
D
(A)
50
-I
D
(A)
50
40
-4.5V
-4V
-10V
T
J
=-55
℃
25
℃
40
30
20
-3V
-2V
30
20
125
℃
10
0
10
0
V
GS
=-1V
-V
DS
(V)
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
0
0.5
1.0
1.5
2.0
2.5
18
25
0
0.5 1.0
4.5
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
R
DS(ON)
(mΩ)
-I
S
(A)
30
25
20
15
10
V
GS
=-4.5V
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
V
GS
=-10V
10
5
-I
D
(A)
-V
SD
(V)
0.6 0.8
0
0.1
0.0
0
3
6
9
12
15
0.2
0.4
1.0
1.2
1.4
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
4
10
8
V
DS
=-15V
I
D
=-5A
C
iss
6
10
3
4
C
oss
C
rss
2
0
-V
DS
(V)
15
Q
g
(nC)
10
2
0
5
10
15
20
20
25
30
0
5
10
3/6
-Channel Enhancement
Mosfet
P
TM012P03DF
Figure 8:
Normalized on Resistance vs.
Junction Temperature
R
DS
(on)
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
V
BR(DSS)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
-I
D
(A
)
-I
D
(A
)
36
10
3
10
2
10
1
Limited byR
DS(on)
30
24
18
12
10μs
100μs
10
0
1m
s
T
C
=25
℃
6
0
Single pulse
DC
10
-1
-V
DS
(V)
1
T
A
(
℃
)
0.01
0.1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-1
10
-4
10
-3
10
-2
10
0
10
1
10
2
4/6
-Channel Enhancement
Mosfet
P
TM012P03DF
Test Circuit
5/6
Package Mechanical Data:DFN3x3-8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
6/6
