Tritech-MOS-TM014P02D
| Part # | Tritech-MOS-TM014P02D |
Download  | Tritech-MOS-TM014P02D |
-Channel
TM014P02D
P
Enhancement Mosfet
General Description
General Features
V
DS
=-20V I
=-50
• Low R
DS(ON)
A
D
• RoHS and Halogen-Free Compliant
=-4.5V
=
14m
W
(
typ
.)@
V
GS
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 50P02
Absolute Maximum Ratings (TC=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
-18
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
12
-50
V
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
A
–
1
5
A
–
3
8
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
W
℃
℃
3.9
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
T
J
-55 to 150
Thermal Data
Symbol
Parameter
Typ.
Max.
45
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θJA
R
θJC
50
1/5
-Channel
P
TM014P02D
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
= -250μA
V
DS
= -12V, V
GS
=0V,
V
DS
=0V, V
GS
= ±12V
-15
-18
–
V
–
–
–
–
-1
μA
I
GSS
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -7A
V
GS
= -2.5V, I
D
= -5A
-0.5
-0.7
14
-1.0
18
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note2
19
25
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1300
302
279
19
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -6V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
= -6V, I
D
= -7A,
V
GS
= -4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
4
5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
11
36
29
8
–
–
–
–
ns
ns
ns
ns
V
DD
= -6V, I
D
= -4A,
V
GS
= -4.5V,
R
GEN
=2.5Ω
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
-50
-38
-1.2
A
A
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
–
Drain to Source Diode Forward
V
GS
=0V, I
S
= -7A
V
SD
-0.8
V
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤2%
2/5
TM014P02D
-Channel
P
Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
15
-I
D
(A)
15
4.5V
T
A
=-55
℃
25
℃
3V
12
12
9
9
125
℃
2V
2.5V
6
6
3
3
0
1.5V
-V
GS
(V)
1.0
-V
DS
(V)
0
0
1
2
3
4
5
0
0.5
1.5
2.0
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
R
DS(ON)
(mΩ)
10
33
30
V
GS
=-2.5V
V
GS
=-4.5V
27
24
21
18
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
15
12
-I
D
(A)
-V
SD
(V)
0.6 0.8
0.1
0.0
0.2
0.4
1.0
1.2
1.4
0
2
4
6
8
10
12
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
4
5
4
3
V
DS
=-6V
I
D
=-7A
C
iss
10
3
10
2
C
oss
C
rss
2
1
0
-V
DS
(V)
9
Q
g
(nC)
1
0
1
0
4
8
12
16
20
0
3
6
12
15
18
3/5
TM014P02D
-Channel
Enhancement Mosfet
P
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
R
DS
(on)
V
BR(DSS)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
-I
D
(A
)
-I
D
(A
)
100
8
6
4
10μs
10
100μs
Limited by R
DS(on)
1
2
1ms
DC
T
A
=25
℃
Single pulse
T
A
(
℃
)
-V
DS
(V)
0.1
0.1
0
1
10
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-1
10
-4
10
-3
10
-2
10
0
10
1
10
2
4/5
Package Mechanical Data:
TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.200
0.000
0.660
0.460
6.500
5.100
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
