Tritech-MOS-TM02N02I
| Part # | Tritech-MOS-TM02N02I |
Download  | Tritech-MOS-TM02N02I |
-Channel Enhancement Mosfet
N
TM02N02I
Product Summary
General Description
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
= 20V
I
D
=2.3A
(typ.)
R
DS(ON)
=50 mΩ
@ V
GS
=4.5V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
I
:
S
O
T
–
2
3
D
S
G
Marking: A2SHB
OR 02N02
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
2 0
±
12
V
GS
Gate-Sou
r
ce Voltage
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
2.3
A
0.95
A
8
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
0.85
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction Case
1
—
162
R
1/5
-Channel Enhancement Mosfet
N
TM02N02I
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
=250μA
V
DS
=20V, V
GS
= 0V,
V
DS
=0V,V
GS
= ±12V
20
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=3A
V
GS
=2.5V, I
D
=2A
0.4
0.7
50
70
1.0
70
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note2
95
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
124
28
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=10V, V
GS
=0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
25
2.7
0.4
0.5
V
DS
=10V, I
D
=3A,
V
GS
=4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
–
–
–
–
4
–
–
–
–
ns
ns
ns
ns
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
30
10
3.5
V
DS
=10V,I
D
=3A,
R
GEN
=3Ω, V
GS
=4.5V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
2.3
10
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
=3A
V
SD
1.2
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤0.5%
2/5
-Channel Enhancement Mosfet
N
TM02N02I
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
25
I
D
(A)
25
20
15
10
5
4.5V
20
3V
15
2.5V
10
25
℃
2.0V
T
J
=125
℃
5
V
GS
=1.5V
V
GS
(V)
V
DS
(V)
0
0
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
1.2
20
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
Figure 4
: Body Diode Characteristics
I
S
(A)
10
90
80
70
60
50
40
30
V
GS
=2.5V
125
℃
T
J
=25
℃
1
V
GS
=4.5V
I
D
(A)
V
SD
(V)
0.1
0.2
0.4
0.6
0.8
1.0
0
1.5
3.0
4.5
6.0
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
3
10
2
4.5
3.6
2.7
1.8
V
GS
=4.5V
I
D
=3A
C
iss
C
oss
C
rss
10
1
0.9
0
V
DS
(V)
Q
g
(nC)
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4
8
12
16
3/5
-Channel Enhancement Mosfet
N
TM02N02I
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
V
BR(DSS)
1.3
R
DS
(on)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
I
D
(A
)
I
D
(A
)
3.6
100
10
1
Limited by
R
DS(on)
3.0
2.4
1.8
100μs
1ms
10ms
1.2
100ms
T
A
=25
℃
0.1
Single pulse
0.6
0
DC
T
A
(
℃
)
V
DS
(V)
0.01
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient Thermal
Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
3
10
2
10
1
D=0.5
D=0.2
t1
D=0.1
t2
10
0
D=0.05
D=0.02
D=0.01
Single pulse
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
10
-1
T
P
(s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
4/5
Package Mechanical Data SOT-23
:
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
5/5
