Tritech-MOS-TM03P06MI
| Part # | Tritech-MOS-TM03P06MI |
Download  | Tritech-MOS-TM03P06MI |
-Channel
TM03P06MI
P
Enhancement Mosfet
General Description
General Features
V
DS
=-60V,I
D
=-3.0A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
DS(ON)
R
=115m
W
(
typ
.) @ V
GS
=-10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
MI:SOT-23-3L
D
S
G
Marking: 3P06
(T =25
℃
unless otherwise noted)
C
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
-60
±
20
-3.0
V
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
A
-2.4
A
-6
A
EAS
Single Pulse Avalanche Energy
3
20
mJ
A
I
AS
Avalanche Current
-20
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
1.5
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
85
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
50
1/6
-Channel
TM03P06MI
P
Enhancement Mosfet
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-3A
-0.049
115
—
—
V/
℃
—
140
190
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-2A
—
V
GS(th)
Gate Threshold Voltage
-1.0
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
5.42
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=150
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-3A
—
5.8
5.9
2.9
1.8
10
Q
g
—
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-12V , V
GS
=-10V , R
G
=3.3
,
—
17
—
ns
I
D
=-3A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
22
—
—
21
—
C
iss
C
oss
C
rss
Input Capacitance
—
715
51
—
V
DS
=-15V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
34
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-3.0
-6
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-20A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/6
-Channel
TM03P06MI
P
Enhancement Mosfet
P-Channel Typical Characteristics
215
8
I
D
=-3A
180
6
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
145
110
75
4
2
0
V
GS
=-4.5V
V
GS
=-4V
2
4
6
8
10
0
0.5
1
1.5
2
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
7.5
5
10
V
DS
=-12V
I
D
=-3A
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
2.5
0
0.2
0.4
0.6
0.8
1
0
3.5
7
10.5
14
-V
SD
, Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
25
100
175
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3/6
-Channel
TM03P06MI
P
Enhancement Mosfet
1000
10.00
1.00
0.10
0.01
100us
1ms
Ciss
10ms
100
100ms
Coss
Crss
T
A
=25
o
C
DC
F=1.0MHz
10
Single Pulse
1
5
9
13
-V
DS
(V)
17
21
25
0.1
1
10
-V
DS
(V)
100
1000
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4/6
-Channel
TM03P06MI
P
Enhancement Mosfet
Test Circuit
5/6
Package Mechanical Data:SOT
–
23-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
θ
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
6/6
