Tritech-MOS-TM049P06DF
| Part # | Tritech-MOS-TM049P06DF |
Download  | Tritech-MOS-TM049P06DF |
TM049P06DF
-Channel
Enhancement Mosfet
P
General Description
General Features
• Low R
DS(ON)
=-20
A
V
DS
=- 60V
I
D
• RoHS and Halogen-Free Compliant
DS(ON)
R
=
49
m
W
(
typ
.) @ V
GS
=-10V
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
DF:DFN3x3_8L
Marking:20P06
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
V
DS
Drain-Source Voltage
-60
V
GS
Gate-Sou
r
ce Voltage
±
20
-20
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
-12
A
-4.5
A
-4.0
A
-30
A
EAS
Single Pulse Avalanche Energy
3
18.1
-13
mJ
A
I
AS
Avalanche Current
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
Total Power Dissipation
4
25
W
W
℃
℃
2
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
5
1/5
TM049P06DF
-Channel
Enhancement Mosfet
P
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-10A
-0.023
49
—
V/
℃
—
60
75
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-6A
—
61
V
GS(th)
Gate Threshold Voltage
-1.2
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
—
—
-1
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-15A
—
12
Q
g
—
6.1
3.1
1.8
2.6
8.6
33.6
6
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-15A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
—
ns
I
D
=-15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
585
100
85
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-20
-30
-1.2
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
I
F
=-15A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
V
—
6.1
1.4
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-19A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
TM049P06DF
-Channel
Enhancement Mosfet
P
Typical Characteristics
144
42
I
D
=-12A
36
V
GS
=-10V
V
GS
=-7V
117
30
24
18
12
6
90
63
36
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
0
0
1
2
3
4
5
6
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
10
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
0
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate Charge Characteristics
2.0
1.5
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3/5
TM049P06DF
-Channel
Enhancement Mosfet
P
100.00
10.00
1.00
100us
1ms
10ms
100ms
DC
0.10
Tc=25
o
C
Single Pulse
0.01
0.1
1
10
100
-V
DS
(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.05
0.02
0.1
0.01
P
DM
SINGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4/5
Package Mechanical Data:DFN3x3-8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
5/5
