Tritech-MOS-TM04N03I

-Channel Enhancement Mosfet  

N

TM04N03I  

General Description  

General Features  

V

DS

= 30V

 

I

D

=3.8A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON)

= 44mΩ @ V

GS

=10V  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

I:SOT-23  

D

S

G

Marking:A6  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

Rating  

Units  

V

Parameter  

Drain-Source Voltage  

30  

V

DS  

V

GS  

V

Gate-Sou

r

ce Voltage  

±

20  

3.8  

I

D

@

T

A

=25

C  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

A

I

D

@

T

A

=70

C  

2.6  

16.4  

A

Pulsed Drain Current

2  

Total Power Dissipation

3  

A

I

DM  

P

D

@

T

A

=25

C  

1

W

Storage Temperature Range  

Operating Junction Temperature Range  

T

STG  

T

J  

C

C

-55 to 150  

-55 to 150  

Thermal Data  

Typ.  

Unit  

C

/ W  

C

/ W  

Symbol  

Parameter  

Max.  

125  

80  

1

Thermal Resistance Junction-ambient  

Thermal Resistance Junction-Case

1  

R

θJA  

R

θJC  

—  

—  

1/5  

-Channel Enhancement Mosfet  

N

TM04N03I  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=30V, V

GS

=0V,  

V

DS

=0V, V

GS

= ±20V  

30  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=4A  

V

GS

=4.5V, I

D

=3A  

1.0  

–

2.0  

44  

3.0  

59  

V

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note2  

60  

65  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

233  

44  

33  

3

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=15V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

V

DS

=15V, I

D

=2A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

0.5  

0.8  

Gate-Drain(“Miller”) Charge  

Switching Characteristics  

t

d(on)

Turn-on Delay Time  

t

r  

t

d(off)  

t

f  

–

–

–

–

4

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=15V,  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

2.1  

15  

3.2  

I

D

=4A, R

GEN

=3Ω,  

V

GS

=10V  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

3.8  

A

Current  

I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  

16  

A

Drain to Source Diode Forward  

V

GS

=0V, I

S

=4A  

V

SD  

–

1.2  

V

Voltage  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤0.5%  

1/5  

-Channel Enhancement Mosfet  

N

TM04N03I  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

10  

I

D

(A)  

25  

20  

10V  

4.5V  

8

3V  

2.5V  

15  

6

125

℃

 

25

℃  

10  

5

4

1.5V  

2

V

GS

(V)  

V

DS

(V)  

0

0

0

1

2

3

4

5

0

1.0  

2.0  

3.0  

4.0  

5.0  

6.0  

1.8  

25  

Figure 4

: Body Diode Characteristics  

Figure 3:

On-resistance vs. Drain Current  

I

S

(A)  

R

DS(ON)

(mΩ)  

10

3  

10

2  

10

1  

10

0  

60  

50  

40  

30  

20  

10  

V

GS

=4.5V  

V

GS

=10V  

T

J

=125

℃  

T

J

=25

℃  

V

GS

=0V  

1.6  

I

D

(A)  

V

SD

(V)  

1.0  

0.2  

0.4  

0.6  

0.8  

1.2  

1.4  

0

1

2

3

4

5

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

C(pF)  

10  

8

V

DS

=15V  

I

D

=2A  

1000  

C

iss  

6

4

100  

10  

C

oss  

C

rss  

2

0

V

DS

(V)  

Q

g

(nC)  

0

0.5  

1

1.5  

2

2.5  

3

0

5

10  

15  

20  

1/5  

-Channel Enhancement Mosfet  

N

TM04N03I  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

R

DS

(on)  

V

BR(DSS)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Ambient Temperature  

I

D

(A

)

 

I

D

(A

)  

5

100  

10  

Limited by R

DS(on)  

1μs  

4

3

2

1

0

10μs  

100μs  

1ms  

1

10ms  

T

A

=25

℃  

Single pulse  

0.1  

0.01  

DC  

T

A

(

℃

)  

75 100  

V

DS

(V)  

0.01  

0.1  

1

10  

100  

0

25  

50  

125  

150  

175  

Figure.11:

Maximum Effective Transient Thermal  

Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

3  

10

2  

10

0  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-1  

10

-2  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJA

+T

A  

T

P

(s)  

10

-2  

10

-6  

10

-5  

10

-4  

10

-3  

10

-1  

10

0  

10

1  

1/5  

-Channel Enhancement Mosfet  

N

TM04N03I  

Test Circuit  

Figure1:Gate Charge Test Circuit & Waveform  

Figure 2: Resistive Switching Test Circuit & Waveforms  

Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms  

1/5  

Package Information SOT-23  

:

Dimensions in Millimeters  

Symbol  

MIN.  

MAX.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

0.950TYP  

2.000  

0.550REF  

0.500  

8°  

A

A1  

A2  

b

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

c

D

E

E1  

e

e1  

L

1.800  

L1  

θ

0.300  

0°  

5/5