Tritech-MOS-TM05P03HMI
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TM05P03HMI
P-Channel Enhancement Mosfet
General Features
General Description
V
DS
= -30V
I
D
=-4.8A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
(
Typ
.)
R
DS(ON)
= 40mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
MI:SOT-23-3L
D
S
G
Marking: A79T OR X7
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
-30
±
20
V
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
2
-4.5
A
-3.6
A
-16
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
Total Power Dissipation
3
Storage
T
e
mperature Range
Operating Junction Temperature Range
1.5
W
W
℃
℃
1.0
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
Max.
105
—
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
—
—
R
θJA
1/5
TM05P03HMI
P-Channel Enhancement Mosfet
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static Characteristics
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
GS
= 0V, I
D
= –
250μA
V
DS
= -30V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS,
I
D
= –
250μA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5V, I
D
= -3A
-30
–
–
–
-1
V
μA
nA
V
–
–
I
GSS
–
±100
-2.5
60
V
GS(th)
Gate-Source Threshold voltage
-1
–
-1.5
40
50
Drain-Source on-State Resistance
3
R
DS(on)
mΩ
–
85
Dynamic Characteristics
4
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
530
70
–
–
–
V
GS
= 0V , V
DS
= -15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
4
Total Gate Charge
pF
56
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
–
6.8
1.0
1.4
14
–
–
–
–
–
–
–
V
GS
= -10V, V
DS
= -15V,
I
D
= -4.1A
Gate−Source Charge
Gate−Drain Charge
Turn-on Delay Time
Rise Time
nC
ns
61
V
GS
= -10V, V
DS
= -15V ,
R
L
= 15Ω,R
GEN
= 2.5Ω
t
d(off)
t
f
Turn-off Delay time
Fall Time
19
10
Source-Drain Body Diode Characteristics
Diode Forward Voltage
3
I
S
= -4.1A, V
GS
= 0V
–
–
–
–
-1.2
-4.8
V
A
V
SD
I
S
Continuous Source Current
Notes:
.
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the
user’s specific board design.
3.
Pulse Test: Pulse width≤300μs, duty cycle≤2%.
4.
This value is guaranteed by design hence it is not included in the production test.
2/5
TM05P03HMI
P-Channel Enhancement Mosfet
Typical Characteristics
10
10
V
GS
= -10V
V
DS
= -3V
V
GS
= -4.5V
8
6
4
2
0
8
6
4
2
0
V
GS
= -3.5V
V
GS
= -3V
V
GS
= -2.5V
0
1
2
3
4
5
0
2
3
4
G
a
1
te−source voltage
-V
GS
(V)
Drain−source voltage
-V
DS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
250
200
150
100
50
I
D
= -4.1A
1
0
0.1
0
3
6
9
12
15
0.2
0.4
0.6
0.8
1.0
1.2
Gate−source voltage
-V
GS
(V)
Source−drain voltage
-V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
2.5
100
80
60
40
20
0
2.0
1.5
1.0
0.5
0.0
V
GS
= -4.5V
GS
= -10V
V
0
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
Temperature T
j
(
°
C
)
Drain current -I
D
(A)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3
3/5
TM05P03HMI
P-Channel Enhancement Mosfet
10000
1000
100
Ciss
Coss
Crss
10
F=1.0MHz
1
0
5
10
15
20
25
30
Drain-
source voltage
-V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
4/5
Package Mechanical Data:SOT-23-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
θ
5/5
