Tritech-MOS-TM05P03MI
| Part # | Tritech-MOS-TM05P03MI |
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TM05P03MI
P-Channel Enhancement Mosfet
General Features
General Description
V
DS
= -30V
I
D
=-4.8A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
(
Typ
.)
R
DS(ON)
= 38mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
MI:SOT-23-3L
D
S
G
Marking: A19T OR 3401
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-30
±12
V
V
Continuous Drain Current
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
IDM
-4.8
A
Continuous Drain Current
-4
A
Pulsed Drain Current
2
-20
A
T
o
tal Power Dissipation
3
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
TSTG
1.4
W
T
o
tal Power Dissipation
3
0.9
W
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t ≤10s)
–
–
55 to 150
55 to 150
125
℃
T
J
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JA
85
1/5
P-Channel Enhancement Mosfet
TM05P03MI
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
BVDSS
Drain-Source Breakdown Voltage
BV
DSS
T
e
mperature Coefficient
V
GS
=0V , I
D
=-250uA
-30
—
-32
-0.014
38
—
—
V
△
BVDSS/
△
TJ
Reference to 25
℃
, I
D
=-1mA
V/
℃
V
GS
=-10V , I
D
=-3A
—
46
V
GS
=-4.5V , I
D
=-3A
V
GS
=-2.5V , I
D
=-2A
—
47
58
RDS(ON)
Static Drain-Source On-Resistance
mΩ
—
75
85
VGS(th)
Gate Threshold Voltage
-0.5
–
0.9
-1.1
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
—
—
2.6
—
—
-1
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
IDSS
Drain-Source Leakage Current
uA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5
±100
—
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
T
o
tal Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
V
GS
=±12V , V
DS
=0V
nA
S
V
DS
=-5V , I
D
=-3A
5.6
11.9
1.8
3
Q
g
—
Qgs
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-3A
nC
ns
Qgd
Td(on)
T
r
—
Turn-On Delay Time
Rise Time
6.6
27.8
46.2
20.6
290
73
—
—
V
DD
=-15V , V
GS
=-4.5V ,
R
G
=3.3Ω, I
D
=-3A
Td(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
Ciss
Coss
Crss
IS
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,4
Diode Forward Voltage
2
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
71
—
V
G
=V
D
=0V , Force Current
—
-4.8
-1.2
A
V
VSD
Note :
—
V
GS
=0V , I
S
=-1A , T
J
=25
℃
1.The data tested by surface mounted on a 1 inch 2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
2/5
P-Channel Enhancement Mosfet
TM05P03MI
Typical Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
3/5
P-Channel Enhancement Mosfet
TM05P03MI
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
D
M
x R
θJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4/5
Package Mechanical Data:SOT-23-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
θ
5/5
