Tritech-MOS-TM05P04MI
| Part # | Tritech-MOS-TM05P04MI |
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TM05P04MI
P-Channel Enhancement Mosfet
General Features
General Description
V
DS
= -40V
I
D
=-5.4A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON)
(typ.)@ V
GS
=10V
= 45mΩ
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
MI:SOT-23-3L
D
S
G
Marking: 5P04
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Parameter
Rating
Units
Symbol
Rating
Units
V
DS
Drain-Source Voltage
-40
±
20
-5.4
-3.6
-22
V
V
V
DS
V
GS
Gate-Sou
r
ce Voltage
V
GS
I
D
@T
A
=25
℃
Continuous Drain Current
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
D
@T
A
=70
℃
Continuous Drain Current
A
I
DM
Pulsed Drain Current
2
A
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
3
2.0
W
W
℃
℃
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
P
D
@T
A
=70
℃
Total Power Dissipation
3
1.5
T
STG
Storage
T
e
mperature Range
-55 to 150
T
STG
T
J
Operating Junction Temperature Range
-55 to 150
–
Thermal Data
Symbol
Symbol
Parameter
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
Typ.
—
Max.
Typ.
Unit
℃
/W
℃
/W
Max.
Unit
℃
/W
℃
/W
1
R
65
48
R
θ
JA
—
—
65
θ
JA
1
1
R
—
R
θ
JA
Ther
m
T
a
h
l
e
R
r
m
e
s
a
i
s
l
t
R
a
e
n
s
c
i
e
s
t
J
a
u
n
n
c
c
e
ti
J
o
u
n
n
–
A
c
t
m
i
o
b
n
i
–
e
A
n
m
t
b
(
i
e
t
n
≤
t
10
(
s
t
)
≤
10s)
48
θ
JA
1/5
TM05P04MI
P-Channel Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
= -250μA
V
DS
= -40V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
-40
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
-1.0
-1.7
45
-2.5
54
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
Note2
60
85
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
869
94
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -20V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
69
17.3
3.2
4.3
V
DS
= -20V, I
D
= -4A,
V
GS
= -10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
10.3
4.3
–
–
–
–
ns
ns
ns
ns
V
DS
= -20V, I
D
= -4A,
V
GS
= -10V, R
GEN
=3Ω
39
46.5
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
-5.4
-22
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= -5.5A
Voltage
V
SD
-0.8
-1.2
trr
Reverse Recovery Time
–
–
17
–
–
ns
V
GS
=0V, I
S
= -5.5A,
di/dt=100A/μs
Qrr
Reverse Recovery Charge
11.5
nC
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤2%
2/5
TM05P04MI
P-Channel Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
25
-I
D
(A)
25
-10V
T
C
=-55
℃
-4.5V
20
20
25
℃
-3V
15
15
125
℃
-2V
10
5
10
5
V
GS
=-1V
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
-V
DS
(V)
0
0
0
2
4
6
8
10
0
0.5 1.0
4.5
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
R
DS(ON)
(mΩ)
10
65
60
V
GS
=-4.5V
V
GS
=-10V
55
50
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
45
40
35
30
-I
D
(A)
6
V
SD
(V)
0.6 0.8
0.1
0.0
0.2
0.4
1.0
1.2
1.4
0
2
4
8
10
12
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
8
10
4
V
DS
=-20V
I
D
=-4A
10
3
C
iss
6
C
oss
C
rss
10
2
10
1
10
0
4
2
0
-V
DS
(V)
15
Q
g
(nC)
0
3
6
9
12
15
18
0
5
10
20
25
30
3/5
TM05P04MI
P-Channel Enhancement Mosfet
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
R
DS
(on)
2.5
V
BR(DSS)
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.9
Tj (
℃
)
Tj (
℃
)
0.5
-100
0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
-I
D
(A
)
-I
D
(A
)
7
10
2
10
1
6
5
4
3
2
10μs
100μs
1ms
DC
10
0
Limited by R
DS(on)
10
-1
10
-2
T
A
=25
℃
Single pulse
-V
DS
(V)
1
0
T
A
(
℃
)
0.01
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
10
-1
10
-2
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-1
10
-4
10
-3
10
-2
10
0
10
1
10
2
4/5
Package Mechanical Data:SOT-23-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
θ
5/5
